Inventor · disambiguated record
Bingyu Zhu
Also filed as: ZHU BINGYU
13 granted patents·4 citations·filing 2021–2022
82Inventor score
Files withCHANGXIN MEMORY TECH INC13
Top patents by PatentIndex Score
13 records- 0190US12114484B2Buried bit line structure, manufacturing method thereof, and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 8, 2024·2 cites·20 claims
- 0285US12165874B2Semiconductor structure and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 10, 2024·1 cites·16 claims
- 0380US11984357B2Semiconductor structure and its manufacturing methodCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·1 cites·16 claims
- 0466US12356609B2Buried bit line structure, method for fabricating buried bit line structure, and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 8, 2025·0 cites·10 claims
- 0561US12082392B2Semiconductor structure and method for preparing seminconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 0657US11990331B2Method for forming silicon dioxide film and method for forming metal gateCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 21, 2024·0 cites·18 claims
- 0757US11825646B2Method for manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Nov 21, 2023·0 cites·15 claims
- 0853US12002707B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jun 4, 2024·0 cites·12 claims
- 0953US11895821B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
- 1052US12112939B2Cleaning process and semiconductor processing methodCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 8, 2024·0 cites·13 claims
- 1151US12284802B2Semiconductor structure and method for manufacturing semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Apr 22, 2025·0 cites·9 claims
- 1249US12108594B2Semiconductor device manufacturing method comprising first conductive layer with increased roughness in array regionCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 1, 2024·0 cites·8 claims
- 1345US12068361B2Semiconductor structure with stacked capacitorsCHANGXIN MEMORY TECH INC·Filed 2021·Granted Aug 20, 2024·0 cites·7 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →