Inventor · disambiguated record
Dongna Shen
Also filed as: Shen Dongna
62 granted patents·4 pending applications·262 citations·filing 2015–2025
98Inventor score
Top patents by PatentIndex Score
66 records- 0199US10043851B1Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etchingHEADWAY TECH INC·Filed 2017·Granted Aug 7, 2018·66 cites·20 claims
- 0298US11800811B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·4 cites·20 claims
- 0398US10418547B1Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·14 cites·20 claims
- 0497US11024797B2Under-cut via electrode for sub 60 nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·7 cites·20 claims
- 0596US10516102B1Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·12 cites·18 claims
- 0695US11818961B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0795US10388862B1Highly selective ion beam etch hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·11 cites·4 claims
- 0895US10134981B1Free layer sidewall oxidation and spacer assisted magnetic tunnel junction (MTJ) etch for high performance magnetoresistive random access memory (MRAM) devicesHEADWAY TECH INC·Filed 2017·Granted Nov 20, 2018·15 cites·25 claims
- 0995US9935261B1Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputteringHEADWAY TECH INC·Filed 2017·Granted Apr 3, 2018·14 cites·24 claims
- 1094US10516100B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·8 cites·20 claims
- 1194US9972777B1MTJ device process/integration method with pre-patterned seed layerHEADWAY TECH INC·Filed 2017·Granted May 15, 2018·11 cites·18 claims
- 1294US9608200B2Hybrid metallic hard mask stack for MTJ etchingHEADWAY TECH INC·Filed 2015·Granted Mar 28, 2017·12 cites·6 claims
- 1392US10522753B2Highly selective ion beam etch hard mask for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·6 cites·20 claims
- 1492US10522751B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
- 1592US9871195B1Spacer assisted ion beam etching of spin torque magnetic random access memoryHEADWAY TECH INC·Filed 2017·Granted Jan 16, 2018·13 cites·20 claims
- 1691US11145809B2Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 12, 2021·2 cites·20 claims
- 1791US10522741B1Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
- 1891US10297746B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·5 cites·13 claims
- 1990US11444241B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
- 2089US11696511B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 2189US10964887B2Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·2 cites·20 claims
- 2289US10522749B2Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·5 cites·19 claims
- 2388US12414479B2Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
- 2488US9887350B2MTJ etching with improved uniformity and profile by adding passivation stepHEADWAY TECH INC·Filed 2015·Granted Feb 6, 2018·6 cites·17 claims
- 2587US10770654B2Multiple spacer assisted physical etching of sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·3 cites·20 claims
- 2687US10153427B1Magnetic tunnel junction (MTJ) performance by introducing oxidants to methanol with or without noble gas during MTJ etchHEADWAY TECH INC·Filed 2017·Granted Dec 11, 2018·4 cites·22 claims
- 2786US12207567B2Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 2885US10868237B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·4 cites·20 claims
- 2985US10522745B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·3 cites·20 claims
- 3084US10359699B2Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·2 cites·21 claims
- 3184US2024298546A1Highly physical ion resistive spacer to define chemical damage free sub 60nm mram devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3283US11985905B2Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 3383US10921707B2Self-adaptive halogen treatment to improve photoresist pattern and magnetoresistive random access memory (MRAM) device uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·2 cites·20 claims
- 3482US11856864B2Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3582US11121314B2Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·1 cites·20 claims
- 3680US10797232B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·3 cites·20 claims
- 3780US9660177B2Method to minimize MTJ sidewall damage and bottom electrode redeposition using IBE trimmingHEADWAY TECH INC·Filed 2015·Granted May 23, 2017·3 cites·14 claims
- 3879US12245516B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3979US11903324B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 4079US2025169374A1Under-cut via electrode for sub 60nm etchless mram devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4179US2025176438A1Self-aligned encapsulation hard mask to separate physically under-etched mtj cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4278US11430947B2Sub 60nm etchless MRAM devices by ion beam etching fabricated t-shaped bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 4378US11043632B2Ion beam etching process design to minimize sidewall re-depositionHEADWAY TECH INC·Filed 2019·Granted Jun 22, 2021·2 cites·8 claims
- 4478US11031548B2Reduce intermixing on MTJ sidewall by oxidationHEADWAY TECH INC·Filed 2019·Granted Jun 8, 2021·2 cites·19 claims
- 4576US12185641B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 4676US11785863B2Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 4775US11563171B2Highly physical ion resistive spacer to define chemical damage free sub 60 nm MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·0 cites·20 claims
- 4875US11081642B2MTJ CD variation by HM trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 4974US10886461B2Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·1 cites·20 claims
- 5074US10038138B1High temperature volatilization of sidewall materials from patterned magnetic tunnel junctionsHEADWAY TECH INC·Filed 2017·Granted Jul 31, 2018·2 cites·20 claims
Showing the top 50 of 66 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →