Inventor · disambiguated record
Yoshito Nakazawa
Also filed as: NAKAZAWA YOSHITO
88 granted patents·21 pending applications·1,070 citations·filing 1998–2025
99Inventor score
Files withRENESAS ELECTRONICS CORP51RENESAS TECH CORP20HITACHI LTD6NAKAZAWA YOSHITO6NUMAZAWA SUMITO6
Top patents by PatentIndex Score
109 records- 0198US6168996B1Method of fabricating semiconductor deviceHITACHI LTD·Filed 1998·Granted Jan 2, 2001·263 cites·23 claims
- 0296US8633510B2IE-type trench gate IGBTMATSUURA HITOSHI·Filed 2012·Granted Jan 21, 2014·28 cites·20 claims
- 0396US7544568B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Jun 9, 2009·30 cites·15 claims
- 0495US8575707B2Semiconductor power device having a super-junction structureTAMAKI TOMOHIRO·Filed 2011·Granted Nov 5, 2013·19 cites·19 claims
- 0595US8232610B2Semiconductor device and manufacturing method of the sameNAKAZAWA YOSHITO·Filed 2010·Granted Jul 31, 2012·15 cites·15 claims
- 0694US9379235B2Semiconductor device including a MOSFET and having a super-junction structureRENESAS ELECTRONICS CORP·Filed 2015·Granted Jun 28, 2016·9 cites·17 claims
- 0794US9269767B2Power superjunction MOSFET device with resurf regionsRENESAS ELECTRONICS CORP·Filed 2015·Granted Feb 23, 2016·8 cites·10 claims
- 0894US8796787B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 5, 2014·14 cites·19 claims
- 0993US8786046B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Jul 22, 2014·11 cites·7 claims
- 1093US8558309B2Power semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2012·Granted Oct 15, 2013·11 cites·8 claims
- 1193US6806548B2Semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Oct 19, 2004·48 cites·21 claims
- 1292US9041070B2Vertical power MOSFETRENESAS ELECTRONICS CORP·Filed 2013·Granted May 26, 2015·14 cites·11 claims
- 1391US9093288B2Power superjunction MOSFET device with resurf regionsRENESAS ELECTRONICS CORP·Filed 2014·Granted Jul 28, 2015·8 cites·10 claims
- 1491US7968939B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Jun 28, 2011·8 cites·3 claims
- 1591US7518208B2Semiconductor device having power transistors and Schottky barrier diodeRENESAS TECH CORP·Filed 2006·Granted Apr 14, 2009·14 cites·7 claims
- 1691US7042048B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted May 9, 2006·16 cites·11 claims
- 1791US6307231B1Method of fabricating semiconductor deviceHITACHI LTD·Filed 2000·Granted Oct 23, 2001·34 cites·14 claims
- 1890US8987819B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Mar 24, 2015·8 cites·23 claims
- 1990US8981469B2Power semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Mar 17, 2015·8 cites·8 claims
- 2090US8598657B2Semiconductor deviceTAMAKI TOMOHIRO·Filed 2011·Granted Dec 3, 2013·11 cites·17 claims
- 2190US7829946B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Nov 9, 2010·12 cites·6 claims
- 2290US7659574B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Feb 9, 2010·16 cites·23 claims
- 2389US7834407B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Nov 16, 2010·7 cites·14 claims
- 2489US6323518B1Insulated gate type semiconductor device and method of manufacturing thereofHITACHI LTD·Filed 1999·Granted Nov 27, 2001·146 cites·23 claims
- 2588US8187941B2Method of manufacturing semiconductor deviceNAKAZAWA YOSHITO·Filed 2011·Granted May 29, 2012·8 cites·10 claims
- 2688US7211862B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted May 1, 2007·11 cites·6 claims
- 2787US9837528B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 5, 2017·2 cites·7 claims
- 2887US7847347B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Dec 7, 2010·5 cites·8 claims
- 2986US9478530B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Oct 25, 2016·2 cites·3 claims
- 3086US9013006B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Apr 21, 2015·3 cites·15 claims
- 3186US6803281B2Method of fabricating semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Oct 12, 2004·18 cites·6 claims
- 3286US6410959B2Method of fabricating semiconductor deviceHITACHI LTD·Filed 2001·Granted Jun 25, 2002·20 cites·9 claims
- 3385US9349827B2IGBT and diodeRENESAS ELECTRONICS CORP·Filed 2015·Granted May 24, 2016·4 cites·5 claims
- 3485US8928071B2Semiconductor device including a MOSFET and Schottky junctionRENESAS ELECTRONICS CORP·Filed 2013·Granted Jan 6, 2015·4 cites·14 claims
- 3585US7078782B2Semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Jul 18, 2006·23 cites·5 claims
- 3685US6977416B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2004·Granted Dec 20, 2005·28 cites·8 claims
- 3784US8129780B2Semiconductor device having a trench type high-power MISFETSHINBORI ATSUSHI·Filed 2008·Granted Mar 6, 2012·20 cites·10 claims
- 3884US7358143B2Semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Apr 15, 2008·8 cites·7 claims
- 3984US6512265B2Method of fabricating semiconductor deviceHITACHI LTD·Filed 2002·Granted Jan 28, 2003·17 cites·5 claims
- 4083US7981747B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Jul 19, 2011·8 cites·8 claims
- 4183US7271068B2Method of manufacture of semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Sep 18, 2007·10 cites·10 claims
- 4283US6720220B2Method of fabricating semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Apr 13, 2004·15 cites·5 claims
- 4382US9825167B2Method of manufacturing a P-channel power MOSFETRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 21, 2017·3 cites·15 claims
- 4482US7880225B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2007·Granted Feb 1, 2011·7 cites·10 claims
- 4582US7595242B2Method of manufacturing a superjunction power MOSFET with self-aligned trench gateRENESAS TECH CORP·Filed 2007·Granted Sep 29, 2009·7 cites·12 claims
- 4681US8008714B2Semiconductor device including a MOSFET and a Schottky junctionRENESAS ELECTRONICS CORP·Filed 2010·Granted Aug 30, 2011·3 cites·6 claims
- 4781US7759730B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2009·Granted Jul 20, 2010·4 cites·5 claims
- 4880US9064839B2IGBT and diodeMATSUURA HITOSHI·Filed 2012·Granted Jun 23, 2015·4 cites·12 claims
- 4980US7518183B2Semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Apr 14, 2009·6 cites·7 claims
- 5078US8350325B2Power semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2011·Granted Jan 8, 2013·3 cites·18 claims
Showing the top 50 of 109 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →