Inventor · disambiguated record
Ming-Bing Chang
Also filed as: CHANG MING-BING
20 granted patents·861 citations·filing 1990–2003
97Inventor score
Files withNAT SEMICONDUCTOR CORP7WINBOND ELECTRONICS CORP3MOTOROLA INC2TAIWAN SEMICONDUCTOR MFG2WINDBOND ELECTRONICS CORP1
Top patents by PatentIndex Score
20 records- 0195US6563733B2Memory array architectures based on a triple-polysilicon source-side injection non-volatile memory cellWINBOND ELECTRONICS CORP·Filed 2001·Granted May 13, 2003·118 cites·25 claims
- 0294US5841700ASource-coupling, split gate, virtual ground flash EEPROM arrayNAT SEMICONDUCTOR CORP·Filed 1997·Granted Nov 24, 1998·91 cites·1 claims
- 0390US6043530AFlash EEPROM device employing polysilicon sidewall spacer as an erase gateFiled 1998·Granted Mar 28, 2000·72 cites·11 claims
- 0489US6101131AFlash EEPROM device employing polysilicon sidewall spacer as an erase gateFiled 1999·Granted Aug 8, 2000·66 cites·2 claims
- 0587US5991204AFlash eeprom device employing polysilicon sidewall spacer as an erase gateFiled 1998·Granted Nov 23, 1999·74 cites·2 claims
- 0685US5258949ANonvolatile memory with enhanced carrier generation and method for programming the sameMOTOROLA INC·Filed 1990·Granted Nov 2, 1993·63 cites·14 claims
- 0781US6959279B1Text-to-speech conversion system on an integrated circuitWINBOND ELECTRONICS CORP·Filed 2002·Granted Oct 25, 2005·51 cites·24 claims
- 0881US5273923AProcess for fabricating an EEPROM cell having a tunnel opening which overlaps field isolation regionsMOTOROLA INC·Filed 1991·Granted Dec 28, 1993·50 cites·15 claims
- 0975US5379254AAsymmetrical alternate metal virtual ground EPROM arrayNAT SEMICONDUCTOR CORP·Filed 1992·Granted Jan 3, 1995·37 cites·4 claims
- 1074US6261907B1Method of forming a flash EEPROM device by employing polysilicon sidewall spacer as an erase gateFiled 1999·Granted Jul 17, 2001·28 cites·1 claims
- 1174US5612240AMethod for making electrical connections to self-aligned contacts that extends beyond the photo-lithographic resolution limitTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Mar 18, 1997·37 cites·12 claims
- 1272US6865186B1Multiple message multilevel analog signal recording and playback system having memory array configurable for analog and digital storage and serial communicationWINBOND ELECTRONICS CORP·Filed 2000·Granted Mar 8, 2005·22 cites·30 claims
- 1370US5313419ASelf-aligned trench isolation scheme for select transistors in an alternate metal virtual ground (AMG) EPROM arrayNAT SEMICONDUCTOR CORP·Filed 1993·Granted May 17, 1994·26 cites·4 claims
- 1469US5705439AMethod to make an asymmetrical LDD structure for deep sub-micron MOSFETSTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 6, 1998·29 cites·10 claims
- 1568US5412238ASource-coupling, split-gate, virtual ground flash EEPROM arrayNAT SEMICONDUCTOR CORP·Filed 1992·Granted May 2, 1995·20 cites·3 claims
- 1667US5644532AMethod for programming a cell in a source-coupling, split-gate, virtual ground flash EEPROM arrayNAT SEMICONDUCTOR CORP·Filed 1995·Granted Jul 1, 1997·20 cites·5 claims
- 1766US6125060AFlash EEPROM device employing polysilicon sidewall spacer as an erase gateFiled 1999·Granted Sep 26, 2000·25 cites·1 claims
- 1861US5480821AMethod of fabricating source-coupling, split-gate, virtual ground flash EEPROM arrayNAT SEMICONDUCTOR CORP·Filed 1995·Granted Jan 2, 1996·15 cites·4 claims
- 1959US5506160AMethod of fabricating a self-aligned trench isolation scheme for select transistors in an alternate metal virtual ground (AMG) EPROM arrayNAT SEMICONDUCTOR CORP·Filed 1995·Granted Apr 9, 1996·17 cites·9 claims
- 2037US6716700B2Method of forming memory arrays based on a triple-polysilicon source-side injection non-volatile memory cellWINDBOND ELECTRONICS CORP·Filed 2003·Granted Apr 6, 2004·0 cites·8 claims
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