Inventor · disambiguated record
Hao-Hsiung Lin
Also filed as: LIN HAO-HSIUNG
22 granted patents·1 pending application·84 citations·filing 1997–2021
93Inventor score
Top patents by PatentIndex Score
23 records- 0194US9711607B1One-dimensional nanostructure growth on graphene and devices thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·9 cites·20 claims
- 0286US10516050B2Method for forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·3 cites·20 claims
- 0386US9773889B2Method of semiconductor arrangement formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 26, 2017·5 cites·20 claims
- 0485US11626320B2Method for manufacturing semiconductor device, method for packaging semiconductor chip, method for manufacturing shallow trench isolation (STI)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·1 cites·20 claims
- 0583US6052039ALumped constant compensated high/low pass balanced-to-unbalanced transitionNAT SCIENCE COUNCIL·Filed 1997·Granted Apr 18, 2000·58 cites·12 claims
- 0682US10263097B2Method of semiconductor arrangement formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 16, 2019·2 cites·20 claims
- 0779US10832957B2Method for direct forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·1 cites·20 claims
- 0875US7538406B2Ambient light sensor utilizing combination of filter layer and absoprtion layer to achieve similar sensitivity to the light as the human eyeUNIV NAT TAIWAN·Filed 2007·Granted May 26, 2009·5 cites·15 claims
- 0969US11605674B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 1067US10957602B2Method for direct forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·0 cites·15 claims
- 1166US11538938B2Method for forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 27, 2022·0 cites·20 claims
- 1266US11164972B2Method for forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·0 cites·17 claims
- 1366US10510611B2Method for direct forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·0 cites·20 claims
- 1464US11177368B2Semiconductor arrangementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 1563US11024674B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·0 cites·20 claims
- 1663US10854724B2One-dimensional nanostructure growth on graphene and devices thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·0 cites·20 claims
- 1761US10347538B2Method for direct forming stressor, semiconductor device having stressor, and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 9, 2019·0 cites·20 claims
- 1860US11715770B2Forming semiconductor structures with semimetal featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 1, 2023·0 cites·20 claims
- 1959US10134865B2One-dimensional nanostructure growth on graphene and devices thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·0 cites·20 claims
- 2054US10504999B2Forming semiconductor structures with semimetal featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 2151US11152251B2Method for manufacturing semiconductor device having via formed by ion beamTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 19, 2021·0 cites·20 claims
- 2249US10515998B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
- 2342US2007194212A1Ambient light photodetectorUNIV NAT TAIWAN·Filed 2006·Application pending·0 cites
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