Inventor · disambiguated record
Xueti Tang
Also filed as: TANG XUETI
46 granted patents·4 pending applications·317 citations·filing 2009–2020
97Inventor score
Top patents by PatentIndex Score
50 records- 0198US9184375B1Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·36 cites·20 claims
- 0298US9130155B2Magnetic junctions having insertion layers and magnetic memories using the magnetic junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 8, 2015·59 cites·31 claims
- 0398US8779538B2Magnetic tunneling junction seed, capping, and spacer layer materialsCHEN EUGENE YOUJUN·Filed 2012·Granted Jul 15, 2014·52 cites·23 claims
- 0493US11348715B2Semiconductor device and method of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 31, 2022·5 cites·20 claims
- 0592US10283701B1Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 7, 2019·17 cites·19 claims
- 0689US8766383B2Method and system for providing a magnetic junction using half metallic ferromagnetsAPALKOV DMYTRO·Filed 2012·Granted Jul 1, 2014·10 cites·22 claims
- 0789US8546896B2Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elementsLOTTIS DANIEL·Filed 2010·Granted Oct 1, 2013·23 cites·37 claims
- 0889US8422285B2Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memoriesAPALKOV DMYTRO·Filed 2011·Granted Apr 16, 2013·9 cites·10 claims
- 0988US9412787B2Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elementsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·6 cites·20 claims
- 1087US8786039B2Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropyAPALKOV DMYTRO·Filed 2012·Granted Jul 22, 2014·11 cites·40 claims
- 1185US9373781B2Dual perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 21, 2016·9 cites·13 claims
- 1285US8698259B2Method and system for providing a magnetic tunneling junction using thermally assisted switchingKROUNBI MOHAMAD TOWFIK·Filed 2011·Granted Apr 15, 2014·11 cites·14 claims
- 1382US9876164B1Method and system for providing a low moment free layer magnetic junction usable in spin transfer torque applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 23, 2018·4 cites·17 claims
- 1482US8704319B2Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memoriesTANG XUETI·Filed 2011·Granted Apr 22, 2014·9 cites·33 claims
- 1580US11009570B2Hybrid oxide/metal cap layer for boron-free free layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 18, 2021·2 cites·20 claims
- 1680US8913350B2Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elementsWATTS STEVEN M·Filed 2009·Granted Dec 16, 2014·10 cites·20 claims
- 1777US9577181B2Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 21, 2017·2 cites·7 claims
- 1876US10439133B2Method and system for providing a magnetic junction having a low damping hybrid free layerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 8, 2019·4 cites·17 claims
- 1975US10431275B2Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 1, 2019·3 cites·20 claims
- 2074US10121961B2Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torqueSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 6, 2018·2 cites·18 claims
- 2174US8710602B2Method and system for providing magnetic junctions having improved characteristicsTANG XUETI·Filed 2011·Granted Apr 29, 2014·3 cites·34 claims
- 2273US9306155B2Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 5, 2016·2 cites·19 claims
- 2372US11251366B2Oxide interlayers containing glass-forming agentsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 15, 2022·1 cites·17 claims
- 2472US8446761B2Method and system for providing multiple logic cells in a single stackAPALKOV DMYTRO·Filed 2011·Granted May 21, 2013·5 cites·23 claims
- 2570US8987006B2Method and system for providing a magnetic junction having an engineered barrier layerMOON KISEOK·Filed 2012·Granted Mar 24, 2015·3 cites·20 claims
- 2668US8891290B2Method and system for providing inverted dual magnetic tunneling junction elementsTANG XUETI·Filed 2011·Granted Nov 18, 2014·4 cites·17 claims
- 2766US9825220B2B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAMSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·2 cites·18 claims
- 2864US9818931B2Method and system for providing magnetic junctions using thermally assisted spin transfer torque switchingSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 14, 2017·2 cites·21 claims
- 2964US9508924B2Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 29, 2016·2 cites·18 claims
- 3063US9559296B2Method for providing a perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic devices using a sacrificial insertion layerSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·1 cites·17 claims
- 3160US8432009B2Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memoriesAPALKOV DMYTRO·Filed 2011·Granted Apr 30, 2013·2 cites·38 claims
- 3259US8697484B2Method and system for setting a pinned layer in a magnetic tunneling junctionAPALKOV DMYTRO·Filed 2011·Granted Apr 15, 2014·2 cites·8 claims
- 3358US8411497B2Method and system for providing a magnetic field aligned spin transfer torque random access memoryONG ADRIAN E·Filed 2010·Granted Apr 2, 2013·2 cites·27 claims
- 3453US10553642B2Method and system for providing magnetic junctions utilizing metal oxide layer(s)SAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 4, 2020·1 cites·15 claims
- 3551US2015129996A1Method and system for providing a top pinned layer perpendicular magnetic anisotropy magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3650US10446209B2Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elementsWATTS STEVEN M·Filed 2011·Granted Oct 15, 2019·1 cites·11 claims
- 3748US2011031569A1Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elementsGRANDIS INC·Filed 2010·Application pending·0 cites
- 3848US2015041933A1Method and system for providing magnetic junctions using bcc cobalt and suitable for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3945US11063209B2Method and system for providing magnetic junctions utilizing oxygen blocking, oxygen adsorber and tuning layer(s)SAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 13, 2021·0 cites·15 claims
- 4045US10276225B2Method and system for providing a magnetic junction usable in spin transfer or spin-orbit torque applications and including a magnetic barrier layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·19 claims
- 4144US9142758B2Method and system for providing a magnetic junction configured for precessional switching using a bias structureAPALKOV DMYTRO·Filed 2012·Granted Sep 22, 2015·0 cites·20 claims
- 4243US9917249B2Method and system for providing a magnetic junction usable in spin transfer torque applications and including a magnetic barrier layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 13, 2018·0 cites·19 claims
- 4340US9966528B2Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer torque applications using a sacrificial oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 8, 2018·0 cites·19 claims
- 4440US9559143B2Method and system for providing magnetic junctions including free layers that are cobalt-freeSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·0 cites·20 claims
- 4537US10438638B2Method and system for providing a magnetic layer in a magnetic junction usable in spin transfer or spin orbit torque applications using a sacrificial oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 8, 2019·0 cites·20 claims
- 4637US10164175B2Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·14 claims
- 4736US9941467B1Method and system for providing a low moment CoFeBMo free layer magnetic junction usable in spin transfer torque applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·0 cites·20 claims
- 4835US2016005791A1Method and system for providing a thin pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 4933US9472750B2Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 18, 2016·0 cites·17 claims
- 5032US9799382B2Method for providing a magnetic junction on a substrate and usable in a magnetic deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 24, 2017·0 cites·12 claims
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