Inventor · disambiguated record
Claudio Contiero
Also filed as: CONTIERO CLAUDIO
22 granted patents·862 citations·filing 1985–2016
97Inventor score
Files withSGS THOMSON MICROELECTRONICS10ST MICROELECTRONICS SRL6SGS MICROELETTRONICA SPA5CONTIERO CLAUDIO1
Top patents by PatentIndex Score
22 records- 0196US4887142AMonolithically integrated semiconductor device containing bipolar junction transistors, CMOS and DMOS transistors and low leakage diodes and a method for its fabricationSGS MICROELETTRONICA SPA·Filed 1988·Granted Dec 12, 1989·118 cites·1 claims
- 0291US5430316AVDMOS transistor with improved breakdown characteristicsST MICROELECTRONICS SRL·Filed 1993·Granted Jul 4, 1995·122 cites·26 claims
- 0390US10062757B2Semiconductor device with buried metallic region, and method for manufacturing the semiconductor deviceST MICROELECTRONICS SRL·Filed 2016·Granted Aug 28, 2018·8 cites·14 claims
- 0489US5610421AIntegrated circuit with EPROM cellsST MICROELECTRONICS SRL·Filed 1994·Granted Mar 11, 1997·81 cites·13 claims
- 0586US5852314AThin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to groundSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Dec 22, 1998·71 cites·6 claims
- 0682US5041895AMixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltageSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Aug 20, 1991·67 cites·1 claims
- 0781US6022778AProcess for the manufacturing of integrated circuits comprising low-voltage and high-voltage DMOS-technology power devices and non-volatile memory cellsSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Feb 8, 2000·49 cites·19 claims
- 0877US4774198ASelf-aligned process for fabricating small DMOS cellsSGS MICROELETTRONICA SPA·Filed 1987·Granted Sep 27, 1988·51 cites·5 claims
- 0976US5589405AMethod for fabricating VDMOS transistor with improved breakdown characteristicsST MICROELECTRONICS SRL·Filed 1995·Granted Dec 31, 1996·47 cites·21 claims
- 1073US5126911AIntegrated circuit self-protected against reversal of the supply battery polaritySGS THOMSON MICROELECTRONICS·Filed 1989·Granted Jun 30, 1992·27 cites·9 claims
- 1172USRE37424EMixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltageST MICROELECTRONICS SRL·Filed 1997·Granted Oct 30, 2001·35 cites·19 claims
- 1270US6093588AProcess for fabricating a high voltage MOSFETST MICROELECTRONICS SRL·Filed 1998·Granted Jul 25, 2000·36 cites·15 claims
- 1366US4757032AMethod for DMOS semiconductor device fabricationSGS THOMSON MICROELECTRONICS·Filed 1985·Granted Jul 12, 1988·32 cites·4 claims
- 1464US4949142AIntegrated N-channel power MOS bridge circuitCONTIERO CLAUDIO·Filed 1985·Granted Aug 14, 1990·24 cites·1 claims
- 1561US5777366AIntegrated device with a structure for protection against high electric fieldsSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jul 7, 1998·21 cites·38 claims
- 1650US5081517AMixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereofSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Jan 14, 1992·14 cites·3 claims
- 1748USRE35442EMixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereofSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Feb 4, 1997·12 cites·5 claims
- 1847US5837554AIntegrated circuit with EPROM cellsSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Nov 17, 1998·10 cites·10 claims
- 1946US4718977AProcess for forming semiconductor device having multi-thickness metallizationSGS MICROELETTRONICA SPA·Filed 1985·Granted Jan 12, 1988·16 cites·3 claims
- 2042US4721686AManufacturing integrated circuits containing P-channel MOS transistors and bipolar transistors utilizing boron and arsenic as dopantsSGS MICROELETTRONICA SPA·Filed 1987·Granted Jan 26, 1988·11 cites·4 claims
- 2140US4892836AMethod for manufacturing semiconductor integrated circuits including CMOS and high-voltage electronic devicesSGS MICROELETTRONICA SPA·Filed 1987·Granted Jan 9, 1990·10 cites·5 claims
- 2230US5804884ASurface electrical field delimiting structure for an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Sep 8, 1998·0 cites·13 claims
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