Inventor · disambiguated record
Hyeong-Geun An
Also filed as: AN HYEONG-GEUN
25 granted patents·4 pending applications·387 citations·filing 2001–2013
96Inventor score
Top patents by PatentIndex Score
29 records- 0195US7638787B2Phase changeable memory cell array region and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 29, 2009·36 cites·3 claims
- 0294US7800095B2Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·35 cites·20 claims
- 0393US7064365B2Ferroelectric capacitors including a seed conductive filmSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 20, 2006·77 cites·15 claims
- 0491US7767568B2Phase change memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·17 cites·11 claims
- 0588US8625325B2Memory cells including resistance variable material patterns of different compositionsAN HYEONG-GEUN·Filed 2010·Granted Jan 7, 2014·13 cites·20 claims
- 0688US7309885B2PRAMs having a plurality of active regions located vertically in sequence and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 18, 2007·15 cites·14 claims
- 0786US7824954B2Methods of forming phase change memory devices having bottom electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·21 cites·36 claims
- 0884US8502184B2Nonvolatile memory device using variable resistive elementAN HYEONG-GEUN·Filed 2011·Granted Aug 6, 2013·10 cites·10 claims
- 0984US6664578B2Ferroelectric memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 16, 2003·29 cites·14 claims
- 1083US8426840B2Nonvolatile memory cells having phase changeable patterns therein for data storageAN HYEONG-GEUN·Filed 2010·Granted Apr 23, 2013·12 cites·10 claims
- 1179US7563639B2Phase-changeable memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 21, 2009·10 cites·19 claims
- 1277US6740531B2Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structuresSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 25, 2004·19 cites·19 claims
- 1377US6686620B2FRAM and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 3, 2004·23 cites·11 claims
- 1475US8039829B2Contact structure, a semiconductor device employing the same, and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·6 cites·13 claims
- 1574US6815226B2Ferroelectric memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·16 cites·11 claims
- 1673US8644062B2Multi-level memory device using resistance materialKIM IK-SOO·Filed 2010·Granted Feb 4, 2014·4 cites·17 claims
- 1773US6717197B2Ferroelectric memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·15 cites·13 claims
- 1871US7777212B2Phase change memory devices including carbon-containing adhesive patternSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·7 cites·13 claims
- 1965US7638788B2Phase change memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·2 cites·27 claims
- 2064US8039298B2Phase changeable memory cell array region and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·2 cites·20 claims
- 2162US7479405B2PRAMS having a plurality of active regions located vertically in sequence and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 20, 2009·2 cites·17 claims
- 2262US7023037B2Integrated circuit devices having dielectric regions protected with multi-layer insulation structuresSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 4, 2006·8 cites·41 claims
- 2359US6815227B2Method of fabricating a ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·7 cites·7 claims
- 2458US8187914B2Methods of forming a phase change memory deviceLEE JIN-IL·Filed 2010·Granted May 29, 2012·1 cites·15 claims
- 2556US2009263934A1Methods of forming chalcogenide films and methods of manufacturing memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2650US8021977B2Methods of forming contact structures and semiconductor devices fabricated using contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·0 cites·20 claims
- 2746US2011197812A1Apparatus and method for fabricating a phase-change material layerIM DONG HYUN·Filed 2010·Application pending·0 cites
- 2841US2013234100A1Nonvolatile memory cells having phase changeable patterns therein for data storageAN HYEONG-GEUN·Filed 2013·Application pending·0 cites
- 2937US2010248460A1Method of forming information storage patternLEE JIN-IL·Filed 2010·Application pending·0 cites
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