Inventor · disambiguated record
Ching-Hwanq Su
Also filed as: SU CHING-HWANQ
76 granted patents·7 pending applications·171 citations·filing 2004–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD76TAIWAN SEMICONDUCTOR MFG3CHANG LAN FANG1JENG JUNG-CHI1LIN YU-TING1
Top patents by PatentIndex Score
83 records- 0199US11404312B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·8 cites·19 claims
- 0298US9935173B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·37 cites·20 claims
- 0397US11742395B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·4 cites·19 claims
- 0497US11502080B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·3 cites·20 claims
- 0597US10304835B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·33 cites·20 claims
- 0696US12021130B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0796US12021147B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
- 0896US11949000B2Metal gate structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·3 cites·20 claims
- 0994US11289578B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 29, 2022·8 cites·20 claims
- 1093US11563120B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·2 cites·20 claims
- 1193US10833196B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·5 cites·20 claims
- 1291US10504789B1Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 1390US11699621B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 1490US11588038B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 1590US11289480B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 1689US12283595B2Integration of multiple transistors having fin and mesa structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 22, 2025·1 cites·20 claims
- 1789US11121041B2Methods for threshold voltage tuning and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·4 cites·20 claims
- 1889US10692770B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·4 cites·20 claims
- 1989US10510621B2Methods for threshold voltage tuning and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 2089US10510756B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·3 cites·20 claims
- 2188US11011611B2Semiconductor device with low resistivity contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·2 cites·20 claims
- 2288US10516034B2Semiconductor device and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·3 cites·20 claims
- 2388US10504795B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·3 cites·20 claims
- 2487US11961891B2Structure for metal gate electrode and method of fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·1 cites·20 claims
- 2587US2025359276A1Circuit Structure with Gate ConfigurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2686US12142530B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 12, 2024·1 cites·20 claims
- 2785US12170280B2Method of manufacturing gate structure and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 2884US11270994B2Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 8, 2022·2 cites·20 claims
- 2984US10157785B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·3 cites·20 claims
- 3083US12513961B2Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 3183US12464801B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 3283US12033893B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 3383US2024379776A1Selective etching to increase threshold voltage spreadTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3482US11855098B2Semiconductor devices having dipole-inducing elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3582US10867845B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·14 claims
- 3682US10847637B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·2 cites·20 claims
- 3782US10756087B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·20 claims
- 3881US11502185B2Methods of manufacturing a gate electrode having metal layers with different average grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·1 cites·20 claims
- 3981US2024088144A1Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4080US12356656B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 4180US10868013B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 4280US10867869B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·21 claims
- 4379US2024387276A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4478US12507429B2Metal gate structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 4578US12142531B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 4678US11855083B2Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·13 claims
- 4778US11769694B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
- 4878US10755938B2Metal gate and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·20 claims
- 4978US2024363734A1P-Type FiNFET as a Radio-Frequency Device and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5076US11075275B2Metal gate fill for short-channel and long-channel semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·2 cites·20 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →