Inventor · disambiguated record
Masatoshi Nishikawa
Also filed as: NISHIKAWA MASATOSHI
56 granted patents·1 pending application·1,134 citations·filing 1979–2020
99Inventor score
Files withSANDISK TECHNOLOGIES LLC39SANDISK TECHNOLOGIES INC8NISHIKAWA MASATOSHI4WESTERN DIGITAL TECH INC2DYNIC CORP1
Top patents by PatentIndex Score
57 records- 0199US10700078B1Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 30, 2020·35 cites·12 claims
- 0299US10700090B1Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 30, 2020·46 cites·12 claims
- 0399US10354980B1Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·168 cites·16 claims
- 0499US10354987B1Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·139 cites·20 claims
- 0598US10797062B1Bonded die assembly using a face-to-back oxide bonding and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 6, 2020·22 cites·11 claims
- 0698US10629675B1Three-dimensional memory device containing capacitor pillars and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 21, 2020·35 cites·20 claims
- 0798US10516025B1Three-dimensional NAND memory containing dual protrusion charge trapping regions and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 24, 2019·35 cites·7 claims
- 0898US10475804B1Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 12, 2019·33 cites·3 claims
- 0998US10381376B1Three-dimensional flat NAND memory device including concave word lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·58 cites·20 claims
- 1098US9859422B2Field effect transistor with elevated active regions and methods of manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 2, 2018·32 cites·12 claims
- 1198US9691781B1Vertical resistor in 3D memory device with two-tier stackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 27, 2017·39 cites·20 claims
- 1298US9646981B2Passive devices for integration with three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 9, 2017·53 cites·12 claims
- 1398US9620512B1Field effect transistor with a multilevel gate electrode for integration with a multilevel memory deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 11, 2017·64 cites·14 claims
- 1497US10741576B2Three-dimensional memory device containing drain-select-level air gap and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 11, 2020·18 cites·10 claims
- 1597US10741535B1Bonded assembly containing multiple memory dies sharing peripheral circuitry on a support die and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 11, 2020·20 cites·14 claims
- 1697US10559582B2Three-dimensional memory device containing source contact to bottom of vertical channels and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 11, 2020·24 cites·10 claims
- 1797US9935123B2Within array replacement openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 3, 2018·18 cites·13 claims
- 1897US9935124B2Split memory cells with unsplit select gates in a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 3, 2018·17 cites·22 claims
- 1997US9837431B23D semicircular vertical NAND string with recessed inactive semiconductor channel sectionsSANDISK TECHNOLOGIES INC·Filed 2016·Granted Dec 5, 2017·26 cites·24 claims
- 2097US9799670B2Three dimensional NAND device containing dielectric pillars for a buried source line and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 24, 2017·44 cites·25 claims
- 2197US9589981B2Passive devices for integration with three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 7, 2017·53 cites·4 claims
- 2296US11094715B2Three-dimensional memory device including different height memory stack structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 17, 2021·3 cites·14 claims
- 2395US10720444B2Three-dimensional flat memory device including a dual dipole blocking dielectric layer and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 21, 2020·9 cites·11 claims
- 2495US10600800B2Three-dimensional memory device containing multilevel drain select gate isolation and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 24, 2020·15 cites·8 claims
- 2595US10515897B2Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 24, 2019·14 cites·9 claims
- 2693US10854619B2Three-dimensional memory device containing bit line switchesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 1, 2020·9 cites·20 claims
- 2793US10734080B2Three-dimensional memory device containing bit line switchesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 4, 2020·9 cites·26 claims
- 2892US11043537B2Three-dimensional phase change memory device including vertically constricted current paths and methods of manufacturing the sameWESTERN DIGITAL TECH INC·Filed 2019·Granted Jun 22, 2021·8 cites·5 claims
- 2992US9911748B2Epitaxial source region for uniform threshold voltage of vertical transistors in 3D memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 6, 2018·8 cites·19 claims
- 3090US11081185B2Non-volatile memory array driven from both sides for performance improvementSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 3, 2021·6 cites·20 claims
- 3188US11222954B2Three-dimensional memory device containing inter-select-gate electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 11, 2022·2 cites·14 claims
- 3286US11024385B2Parallel memory operations in multi-bonded memory deviceSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 1, 2021·4 cites·19 claims
- 3386US10741579B2Three-dimensional memory device including different height memory stack structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 11, 2020·3 cites·20 claims
- 3485US10964752B2Three-dimensional memory device including laterally constricted current paths and methods of manufacturing the sameWESTERN DIGITAL TECH INC·Filed 2019·Granted Mar 30, 2021·4 cites·20 claims
- 3583US10991705B2Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 27, 2021·3 cites·18 claims
- 3683US10839918B1Boost converter in memory chipSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 3782US9941297B2Vertical resistor in 3D memory device with two-tier stackSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 10, 2018·3 cites·14 claims
- 3881US10878907B1Sub-block size reduction for 3D non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 29, 2020·4 cites·12 claims
- 3981US10580787B2Three-dimensional memory device containing dummy antenna diodesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 3, 2020·3 cites·12 claims
- 4080US11404122B2Sub-block size reduction for 3D non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 2, 2022·1 cites·20 claims
- 4178US8563382B2Semiconductor deviceNISHIKAWA MASATOSHI·Filed 2012·Granted Oct 22, 2013·4 cites·5 claims
- 4275US10622367B1Three-dimensional memory device including three-dimensional bit line discharge transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 14, 2020·3 cites·20 claims
- 4373US11487454B2Systems and methods for defining memory sub-blocksSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 1, 2022·1 cites·19 claims
- 4471US10991706B2Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 4570US10756106B2Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 25, 2020·1 cites·8 claims
- 4669US8329570B2Method of manufacturing semiconductor deviceFUKUDA MASAHIRO·Filed 2011·Granted Dec 11, 2012·2 cites·10 claims
- 4769US4250620APlastic scissors with metallic cutting insertsNISHIKAWA MASATOSHI·Filed 1979·Granted Feb 17, 1981·22 cites·1 claims
- 4862US10930674B2Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 23, 2021·0 cites·8 claims
- 4961US11587943B2Bonded die assembly using a face-to-back oxide bonding and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 5060US11631691B2Three-dimensional flat memory device including a dual dipole blocking dielectric layer and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 18, 2023·0 cites·7 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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