Inventor · disambiguated record
Soo-Hun Hong
Also filed as: HONG SOO-HUN
16 granted patents·1 pending application·169 citations·filing 2013–2024
92Inventor score
Top patents by PatentIndex Score
17 records- 0198US8878309B1Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 4, 2014·105 cites·25 claims
- 0297US8836046B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2013·Granted Sep 16, 2014·19 cites·20 claims
- 0394US9379106B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 28, 2016·18 cites·22 claims
- 0489US10153270B2Electrostatic discharge protection devicesKANG DAE LIM·Filed 2015·Granted Dec 11, 2018·9 cites·20 claims
- 0588US12336242B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 0686US11011511B2Electrostatic discharge protection devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 18, 2021·3 cites·17 claims
- 0786US9299811B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 29, 2016·7 cites·12 claims
- 0885US10002943B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 19, 2018·4 cites·20 claims
- 0983US10269928B2Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channelsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·8 claims
- 1075US11955517B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·19 claims
- 1175US9419077B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2014·Granted Aug 16, 2016·1 cites·18 claims
- 1270US12074157B2Electrostatic discharge protection devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·10 claims
- 1367US10861934B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 1466US10319814B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 11, 2019·0 cites·17 claims
- 1564US9627483B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2014·Granted Apr 18, 2017·0 cites·9 claims
- 1643US11482523B2Semiconductor devices with fin-shaped active regions and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 25, 2022·0 cites·13 claims
- 1742US2014353763A1Semiconductor devices including fin-fets and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
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