Inventor · disambiguated record
Yasumasa Suizu
Also filed as: SUIZU YASUMASA
9 granted patents·160 citations·filing 1991–2009
89Inventor score
Technology areasH10P
Files withTOSHIBA KK9
Top patents by PatentIndex Score
9 records- 0194US6784508B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2001·Granted Aug 31, 2004·65 cites·7 claims
- 0289US7947610B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2009·Granted May 24, 2011·10 cites·1 claims
- 0380US7425480B2Semiconductor device and method of manufacture thereofTOSHIBA KK·Filed 2007·Granted Sep 16, 2008·5 cites·13 claims
- 0479US7306994B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Dec 11, 2007·15 cites·11 claims
- 0574US7303946B1Method of manufacturing a semiconductor device using an oxidation processTOSHIBA KK·Filed 2000·Granted Dec 4, 2007·13 cites·10 claims
- 0668US5279973ARapid thermal annealing for semiconductor substrate by using incoherent lightTOSHIBA KK·Filed 1991·Granted Jan 18, 1994·45 cites·5 claims
- 0764US7544593B2Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereofTOSHIBA KK·Filed 2007·Granted Jun 9, 2009·1 cites·1 claims
- 0864US7312138B2Semiconductor device and method of manufacture thereofTOSHIBA KK·Filed 2007·Granted Dec 25, 2007·1 cites·5 claims
- 0953US6759314B1Method for manufacturing semiconductor devices using thermal nitride films as gate insulating filmsTOSHIBA KK·Filed 2000·Granted Jul 6, 2004·5 cites·15 claims
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