Inventor · disambiguated record
Martin Seck
Also filed as: SECK MARTIN
14 granted patents·97 citations·filing 2003–2010
91Inventor score
Top patents by PatentIndex Score
14 records- 0195US7619309B2Integrated connection arrangementsINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 17, 2009·49 cites·19 claims
- 0288US8367514B2Integrated circuit with capacitor and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2010·Granted Feb 5, 2013·9 cites·4 claims
- 0376US7667256B2Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and a method for producing the integrated circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 23, 2010·8 cites·17 claims
- 0470US7692266B2Integrated circuit with capacitor and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2006·Granted Apr 6, 2010·3 cites·14 claims
- 0568US8003475B2Method for fabricating a transistor structureINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 23, 2011·2 cites·10 claims
- 0667US7964494B2Integrated connection arrangementsINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jun 21, 2011·3 cites·4 claims
- 0767US7656037B2Integrated circuit with improved component interconnectionsINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 2, 2010·4 cites·19 claims
- 0866US7592648B2Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production methodINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 22, 2009·4 cites·11 claims
- 0964US7968416B2Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production methodINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jun 28, 2011·3 cites·8 claims
- 1062US7371650B2Method for producing a transistor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 13, 2008·7 cites·7 claims
- 1149US8258628B2System and method for integrated circuit arrangement having a plurality of conductive structure levelsHOMMEL MARTINA·Filed 2006·Granted Sep 4, 2012·1 cites·19 claims
- 1245US7038255B2Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication methodINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 2, 2006·4 cites·13 claims
- 1337US7060583B2Method for manufacturing a bipolar transistor having a polysilicon emitterINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jun 13, 2006·0 cites·4 claims
- 1436US7091100B2Polysilicon bipolar transistor and method of manufacturing itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 15, 2006·0 cites·20 claims
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