Inventor · disambiguated record
Kenji Yoshiyama
Also filed as: YOSHIYAMA KENJI
8 granted patents·4 pending applications·159 citations·filing 1998–2004
89Inventor score
Top patents by PatentIndex Score
12 records- 0183US6486558B2Semiconductor device having a dummy patternMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Nov 26, 2002·36 cites·6 claims
- 0278US6657247B2Semiconductor device with MIM capacitance elementRENESAS TECH CORP·Filed 2001·Granted Dec 2, 2003·33 cites·3 claims
- 0367US6614643B1Semiconductor device having a capacitor elementMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 2, 2003·16 cites·5 claims
- 0464US6541823B1Semiconductor device including multiple field effect transistors and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 1, 2003·20 cites·2 claims
- 0563US6853030B2Semiconductor device including multiple field effect transistors, with first FETs having oxide spacers and the second FETs having oxide nitride oxidation protectionRENESAS TECH CORP·Filed 2003·Granted Feb 8, 2005·9 cites·2 claims
- 0663US6479873B1Semiconductor device with self-aligned contact structureMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 12, 2002·23 cites·9 claims
- 0757US6620666B2Method of manufacturing semiconductor device of dual-gate construction, and semiconductor device manufactured thereby including forming a region of over-lapping n-type and p-type impurities with lower resistanceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 16, 2003·8 cites·2 claims
- 0848US6064099ALayout of well contacts and source contacts of a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 16, 2000·14 cites·9 claims
- 0938US2005062099A1Semiconductor device including multiple field effect transistors, with first fets having oxide spacers and the second fets having oxide nitride oxidation protectionMITSUBISHI ELECTRIC CORP·Filed 2004·Application pending·0 cites
- 1036US2003111683A1Method of fabricating transistorMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 1133US2004029373A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 1229US2001052648A1Semiconductor device and method of manufacturing the sameFiled 1999·Application pending·0 cites
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