Inventor · disambiguated record
Werner Rausch
Also filed as: RAUESCH WERNER · RAUSCH WERNER · RAUSCH WERNER A · RAUSCH WERNER ALOIS
66 granted patents·3 pending applications·2,187 citations·filing 1978–2019
99Inventor score
Top patents by PatentIndex Score
69 records- 0199US10068184B1Vertical superconducting capacitors for transmon qubitsIBM·Filed 2017·Granted Sep 4, 2018·43 cites·24 claims
- 0299US7981751B2Structure and method for fabricating self-aligned metal contactsIBM·Filed 2009·Granted Jul 19, 2011·523 cites·5 claims
- 0398US9437496B1Merged source drain epitaxyGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 6, 2016·26 cites·20 claims
- 0496US7485520B2Method of manufacturing a body-contacted finfetIBM·Filed 2007·Granted Feb 3, 2009·55 cites·1 claims
- 0596US7176481B2In situ doped embedded sige extension and source/drain for enhanced PFET performanceIBM·Filed 2005·Granted Feb 13, 2007·52 cites·28 claims
- 0696US7071103B2Chemical treatment to retard diffusion in a semiconductor overlayerIBM·Filed 2004·Granted Jul 4, 2006·120 cites·25 claims
- 0795US7132323B2CMOS well structure and method of forming the sameIBM·Filed 2003·Granted Nov 7, 2006·99 cites·25 claims
- 0895US6624459B1Silicon on insulator field effect transistors having shared body contactIBM·Filed 2000·Granted Sep 23, 2003·103 cites·23 claims
- 0995US5675185ASemiconductor structure incorporating thin film transistors with undoped cap oxide layersIBM·Filed 1995·Granted Oct 7, 1997·123 cites·24 claims
- 1094US6939751B2Method and manufacture of thin silicon on insulator (SOI) with recessed channelIBM·Filed 2003·Granted Sep 6, 2005·98 cites·19 claims
- 1192US6303450B1CMOS device structures and method of making sameIBM·Filed 2000·Granted Oct 16, 2001·67 cites·15 claims
- 1291US6930030B2Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thicknessIBM·Filed 2003·Granted Aug 16, 2005·57 cites·20 claims
- 1391US6713791B2T-RAM array having a planar cell structure and method for fabricating the sameIBM·Filed 2001·Granted Mar 30, 2004·48 cites·7 claims
- 1489US7135724B2Structure and method for making strained channel field effect transistor using sacrificial spacerIBM·Filed 2004·Granted Nov 14, 2006·47 cites·16 claims
- 1589US6429482B1Halo-free non-rectifying contact on chip with halo source/drain diffusionIBM·Filed 2000·Granted Aug 6, 2002·46 cites·18 claims
- 1689US6022766ASemiconductor structure incorporating thin film transistors, and methods for its manufactureIBM·Filed 1997·Granted Feb 8, 2000·76 cites·2 claims
- 1788US7615831B2Structure and method for fabricating self-aligned metal contactsIBM·Filed 2007·Granted Nov 10, 2009·12 cites·20 claims
- 1886US6815282B2Silicon on insulator field effect transistor having shared body contactIBM·Filed 2003·Granted Nov 9, 2004·36 cites·12 claims
- 1984US6337253B1Process of making buried capacitor for silicon-on-insulator structureIBM·Filed 2000·Granted Jan 8, 2002·30 cites·8 claims
- 2083US10552758B2Vertical superconducting capacitors for transmon qubitsIBM·Filed 2019·Granted Feb 4, 2020·1 cites·24 claims
- 2183US5294266AProcess for a passivating postrinsing of conversion layersMETALLGESELLSCHAFT AG·Filed 1992·Granted Mar 15, 1994·53 cites·18 claims
- 2281US7700425B2Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plugIBM·Filed 2006·Granted Apr 20, 2010·8 cites·16 claims
- 2381US6188122B1Buried capacitor for silicon-on-insulator structureIBM·Filed 1999·Granted Feb 13, 2001·40 cites·8 claims
- 2479US10839133B1Circuit layout similarity metric for semiconductor testsite coverageIBM·Filed 2019·Granted Nov 17, 2020·2 cites·20 claims
- 2579US7645656B2Structure and method for making strained channel field effect transistor using sacrificial spacerIBM·Filed 2006·Granted Jan 12, 2010·7 cites·18 claims
- 2677US8017483B2Method of creating asymmetric field-effect-transistorsIBM·Filed 2009·Granted Sep 13, 2011·5 cites·26 claims
- 2777US6521947B1Method of integrating substrate contact on SOI wafers with STI processIBM·Filed 1999·Granted Feb 18, 2003·50 cites·16 claims
- 2877US5670812AField effect transistor having contact layer of transistor gate electrode materialIBM·Filed 1995·Granted Sep 23, 1997·42 cites·21 claims
- 2976US6887798B2STI stress modification by nitrogen plasma treatment for improving performance in small width devicesIBM·Filed 2003·Granted May 3, 2005·16 cites·12 claims
- 3072US4169741AMethod for the surface treatment of metalsOXY METAL INDUSTRIES CORP·Filed 1978·Granted Oct 2, 1979·21 cites·7 claims
- 3171US9029862B2Low resistance embedded strap for a trench capacitorIBM·Filed 2013·Granted May 12, 2015·2 cites·10 claims
- 3271US7491598B2CMOS circuits including a passive element having a low end resistanceIBM·Filed 2007·Granted Feb 17, 2009·3 cites·10 claims
- 3370US7479688B2STI stress modification by nitrogen plasma treatment for improving performance in small width devicesIBM·Filed 2004·Granted Jan 20, 2009·11 cites·18 claims
- 3467US10445651B2Vertical superconducting capacitors for transmon qubitsIBM·Filed 2018·Granted Oct 15, 2019·0 cites·24 claims
- 3567US5236565AProcess of phosphating before electroimmersion paintingMETALLGESELLSCHAFT AG·Filed 1990·Granted Aug 17, 1993·26 cites·21 claims
- 3666US6750109B2Halo-free non-rectifying contact on chip with halo source/drain diffusionIBM·Filed 2002·Granted Jun 15, 2004·11 cites·12 claims
- 3765US7880238B22-T SRAM cell structure and methodIBM·Filed 2008·Granted Feb 1, 2011·5 cites·7 claims
- 3865US4419199AProcess for phosphatizing metalsOCCIDENTAL CHEM CO·Filed 1982·Granted Dec 6, 1983·19 cites·6 claims
- 3964US7790541B2Method and structure for forming multiple self-aligned gate stacks for logic devicesIBM·Filed 2007·Granted Sep 7, 2010·3 cites·1 claims
- 4063US9812394B2Faceted structure formed by self-limiting etchIBM·Filed 2015·Granted Nov 7, 2017·1 cites·20 claims
- 4163US5744384ASemiconductor structures which incorporate thin film transistorsIBM·Filed 1996·Granted Apr 28, 1998·21 cites·7 claims
- 4261US7402870B2Ultra shallow junction formation by epitaxial interface limited diffusionIBM·Filed 2004·Granted Jul 22, 2008·5 cites·11 claims
- 4360US6686629B1SOI MOSFETS exhibiting reduced floating-body effectsIBM·Filed 1999·Granted Feb 3, 2004·16 cites·16 claims
- 4459US5757050AField effect transistor having contact layer of transistor gate electrode materialIBM·Filed 1997·Granted May 26, 1998·18 cites·6 claims
- 4558US8680617B2Split level shallow trench isolation for area efficient body contacts in SOI MOSFETSLI YING·Filed 2009·Granted Mar 25, 2014·1 cites·17 claims
- 4658US7816237B2Ultra shallow junction formation by epitaxial interface limited diffusionIBM·Filed 2008·Granted Oct 19, 2010·0 cites·20 claims
- 4758US6432777B1Method for increasing the effective well doping in a MOSFET as the gate length decreasesIBM·Filed 2001·Granted Aug 13, 2002·8 cites·19 claims
- 4857US7163866B2SOI MOSFETS exhibiting reduced floating-body effectsIBM·Filed 2003·Granted Jan 16, 2007·6 cites·16 claims
- 4956US8067805B2Ultra shallow junction formation by epitaxial interface limited diffusionCHEN HUAJIE·Filed 2008·Granted Nov 29, 2011·0 cites·13 claims
- 5055US5268041AProcess for phosphating metal surfacesMETALLGESELLSCHAFT AG·Filed 1992·Granted Dec 7, 1993·17 cites·16 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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