Inventor · disambiguated record
Hideki Horii
Also filed as: HORII HIDEKI
51 granted patents·6 pending applications·721 citations·filing 1997–2024
98Inventor score
Top patents by PatentIndex Score
57 records- 0195US7638787B2Phase changeable memory cell array region and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 29, 2009·36 cites·3 claims
- 0294US7800095B2Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·35 cites·20 claims
- 0394US7037762B2Phase changeable memory devices having multi-level data storage elements and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 2, 2006·65 cites·33 claims
- 0493US10186552B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 22, 2019·11 cites·20 claims
- 0593US7558100B2Phase change memory devices including memory cells having different phase change materials and related methods and systemsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 7, 2009·31 cites·54 claims
- 0693US6255187B1Method of fabricating self-aligning stacked capacitor using electroplating methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 3, 2001·75 cites·30 claims
- 0792US8871559B2Methods for fabricating phase change memory devicesHORII HIDEKI·Filed 2011·Granted Oct 28, 2014·21 cites·22 claims
- 0891US9520556B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 13, 2016·8 cites·10 claims
- 0991US7767568B2Phase change memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·17 cites·11 claims
- 1091US7037749B2Methods for forming phase changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·40 cites·25 claims
- 1190US6630387B2Method for forming capacitor of semiconductor memory device using electroplating methodSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 7, 2003·53 cites·26 claims
- 1288US7038261B2Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retentionSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 2, 2006·46 cites·14 claims
- 1387US5877062AMethods of forming integrated circuit capacitors having protected diffusion barrier metal layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 2, 1999·66 cites·20 claims
- 1486US8552412B2Variable resistance memory device and method of forming the samePARK JEONGHEE·Filed 2010·Granted Oct 8, 2013·11 cites·10 claims
- 1586US7778066B2Resistance variable memory device and programming method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·17 cites·20 claims
- 1686US7763878B2Phase changeable memory device structuresSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 27, 2010·11 cites·15 claims
- 1785US7247897B2Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufacturedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·11 cites·22 claims
- 1884US10403681B2Memory device including a variable resistance material layerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·6 cites·20 claims
- 1984US7787278B2Resistance variable memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·15 cites·20 claims
- 2084US7498064B2Laser reflowing of phase changeable memory element to close a void thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 3, 2009·11 cites·16 claims
- 2184US7495456B2System and method of determining pulse properties of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·9 cites·27 claims
- 2282US8580606B2Method of forming resistance variable memory devicePARK JEONG-HEE·Filed 2011·Granted Nov 12, 2013·6 cites·20 claims
- 2381US8299450B2Non-volatile memory device including phase-change materialAHN DONG-HO·Filed 2010·Granted Oct 30, 2012·8 cites·16 claims
- 2480US7397092B2Phase changable memory device structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·5 cites·24 claims
- 2579US7575776B2Reflowing of a phase changeable memory element to close voids thereinSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·7 cites·19 claims
- 2678US10224371B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·2 cites·17 claims
- 2778US9318700B2Method of manufacturing a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 19, 2016·3 cites·20 claims
- 2876US10236444B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 19, 2019·2 cites·18 claims
- 2975US10468594B2Variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 5, 2019·2 cites·20 claims
- 3075US10388867B2Variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 20, 2019·2 cites·16 claims
- 3174US7767491B2Methods of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 3, 2010·6 cites·13 claims
- 3274US7605087B2Methods of forming semiconductor devices using di-block polymer layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 20, 2009·4 cites·23 claims
- 3372US7060543B2Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 13, 2006·15 cites·13 claims
- 3471US7777212B2Phase change memory devices including carbon-containing adhesive patternSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·7 cites·13 claims
- 3568US8735215B2Method of manufacturing variable resistance memory devicePARK JEONG-HEE·Filed 2011·Granted May 27, 2014·3 cites·19 claims
- 3665US7638788B2Phase change memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 29, 2009·2 cites·27 claims
- 3765US6177284B1Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereofSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 23, 2001·30 cites·9 claims
- 3864US8039298B2Phase changeable memory cell array region and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·2 cites·20 claims
- 3963US8238147B2Multi-level phase change memory device, program method thereof, and method and system including the sameBAE JUN-SOO·Filed 2008·Granted Aug 7, 2012·5 cites·19 claims
- 4061US8222625B2Non-volatile memory device including phase-change materialAHN DONG-HO·Filed 2010·Granted Jul 17, 2012·1 cites·4 claims
- 4159US10403818B2Method of forming semiconductor devices having threshold switching devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·1 cites·9 claims
- 4259US8581612B2Probe card and test apparatus including the sameHORII HIDEKI·Filed 2010·Granted Nov 12, 2013·1 cites·15 claims
- 4359US2025234523A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4457US10636968B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
- 4556US10546894B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 28, 2020·0 cites·18 claims
- 4655US2024237564A1Variable resistance material and variable resistance memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4754US2013299766A1Variable resistance memory device and methods of forming the samePARK DOO-HWAN·Filed 2013·Application pending·0 cites
- 4850US9893281B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 13, 2018·0 cites·8 claims
- 4950US8962438B2Variable resistance memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 24, 2015·0 cites·18 claims
- 5049US11387410B2Semiconductor device including data storage material patternSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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