Inventor · disambiguated record
Kenya Kobayashi
Also filed as: KOBAYASHI KENYA
62 granted patents·6 pending applications·409 citations·filing 1994–2024
98Inventor score
Top patents by PatentIndex Score
68 records- 0197US9525059B1Semiconductor device with graded drift regionTOSHIBA KK·Filed 2016·Granted Dec 20, 2016·18 cites·20 claims
- 0296US11239357B2Semiconductor deviceTOSHIBA KK·Filed 2020·Granted Feb 1, 2022·4 cites·13 claims
- 0396US11127854B2Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2020·Granted Sep 21, 2021·4 cites·12 claims
- 0493US9716009B2Power semiconductor device with electrode having trench structureTOSHIBA KK·Filed 2015·Granted Jul 25, 2017·10 cites·5 claims
- 0592US11362210B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Jun 14, 2022·2 cites·9 claims
- 0691US11239231B2Semiconductor deviceTOSHIBA KK·Filed 2020·Granted Feb 1, 2022·2 cites·15 claims
- 0791US9954055B2Vertical power MOSFET deviceTOSHIBA KK·Filed 2016·Granted Apr 24, 2018·7 cites·20 claims
- 0890US7893489B2Semiconductor device having vertical MOSFETRENESAS ELECTRONICS CORP·Filed 2008·Granted Feb 22, 2011·17 cites·10 claims
- 0990US6888196B2Vertical MOSFET reduced in cell size and method of producing the sameNEC ELECTRONICS CORP·Filed 2003·Granted May 3, 2005·54 cites·6 claims
- 1089US9947751B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2017·Granted Apr 17, 2018·6 cites·6 claims
- 1188US7332770B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Feb 19, 2008·13 cites·18 claims
- 1284US10319850B2Semiconductor device and manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2018·Granted Jun 11, 2019·4 cites·13 claims
- 1382US10840368B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted Nov 17, 2020·3 cites·7 claims
- 1482US10453957B2Semiconductor deviceTOSHIBA KK·Filed 2017·Granted Oct 22, 2019·4 cites·4 claims
- 1582US6313508B1Semiconductor device of high-voltage CMOS structure and method of fabricating sameNEC CORP·Filed 1998·Granted Nov 6, 2001·43 cites·7 claims
- 1680US9536959B2Power semiconductor device having field plate electrodeTOSHIBA KK·Filed 2015·Granted Jan 3, 2017·3 cites·19 claims
- 1779US5736779ASemiconductor device with Zener diode for gate protection, and method for fabricating the sameNEC CORP·Filed 1996·Granted Apr 7, 1998·42 cites·9 claims
- 1878US11695043B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2019·Granted Jul 4, 2023·2 cites·8 claims
- 1978US8361865B2Method of manufacturing a semiconductor device having vertical MOSFETRENESAS ELECTRONICS CORP·Filed 2010·Granted Jan 29, 2013·4 cites·16 claims
- 2076US8222690B2Vertical power MOSFET semiconductor apparatus having separate base regions and manufacturing method thereofOHTANI KINYA·Filed 2010·Granted Jul 17, 2012·4 cites·3 claims
- 2175US10340346B2Semiconductor deviceTOSHIBA KK·Filed 2018·Granted Jul 2, 2019·2 cites·10 claims
- 2273US7622351B2Method of manufacturing semiconductor device and semiconductor deviceNEC ELECTRONICS CORP·Filed 2009·Granted Nov 24, 2009·5 cites·11 claims
- 2372US8314460B2Vertical power MOSFET semiconductor apparatus having separate base regions and manufacturing method thereofOHTANI KINYA·Filed 2009·Granted Nov 20, 2012·4 cites·18 claims
- 2469US11791408B2Semiconductor deviceTOSHIBA KK·Filed 2022·Granted Oct 17, 2023·0 cites·9 claims
- 2567US7947556B2Method of manufacturing semiconductor apparatusRENESAS ELECTRONICS CORP·Filed 2010·Granted May 24, 2011·2 cites·20 claims
- 2667US7705408B2Vertical field effect transistorNEC ELECTRONICS CORP·Filed 2005·Granted Apr 27, 2010·3 cites·19 claims
- 2766US9871131B2Semiconductor device with insulating section of varying thicknessTOSHIBA KK·Filed 2016·Granted Jan 16, 2018·1 cites·20 claims
- 2865US8173508B2Semiconductor device having vertical type MOSFET and manufacturing method thereofSUMIDA WATARU·Filed 2009·Granted May 8, 2012·3 cites·16 claims
- 2964US11715793B2Semiconductor device and method of manufacturing sameTOSHIBA KK·Filed 2021·Granted Aug 1, 2023·0 cites·9 claims
- 3063US11705447B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Jul 18, 2023·0 cites·17 claims
- 3163US6492683B2Semiconductor device with SOI structure and method of manufacturing the sameNEC CORP·Filed 2001·Granted Dec 10, 2002·9 cites·10 claims
- 3263US6004406ASilicon on insulating substrateNEC CORP·Filed 1995·Granted Dec 21, 1999·24 cites·2 claims
- 3362US7508030B2Semiconductor device with vertical MOSFET and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2005·Granted Mar 24, 2009·2 cites·7 claims
- 3461US6541314B2Semiconductor device with SOI structure and method of manufacturing the sameNEC CORP·Filed 2002·Granted Apr 1, 2003·8 cites·8 claims
- 3560US7704827B2Semiconductor device and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2007·Granted Apr 27, 2010·1 cites·10 claims
- 3660US2025107142A1Semiconductor deviceTOSHIBA KK·Filed 2024·Application pending·0 cites
- 3759US7645661B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2007·Granted Jan 12, 2010·1 cites·20 claims
- 3859US2025107182A1Semiconductor deviceTOSHIBA KK·Filed 2024·Application pending·0 cites
- 3958US7956409B2Semiconductor device having trench gate structureRENESAS ELECTRONICS CORP·Filed 2008·Granted Jun 7, 2011·1 cites·10 claims
- 4056US5909626ASOI substrate and fabrication process thereforNEC CORP·Filed 1997·Granted Jun 1, 1999·21 cites·14 claims
- 4155US5476809ASemiconductor device and method of manufacturing the sameNEC CORP·Filed 1994·Granted Dec 19, 1995·23 cites·6 claims
- 4253US9853023B2Semiconductor device and semiconductor packageTOSHIBA KK·Filed 2017·Granted Dec 26, 2017·0 cites·12 claims
- 4353US8592896B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2012·Granted Nov 26, 2013·0 cites·13 claims
- 4453US2020116714A1Cancer diagnosis deviceUNIV HIROSHIMA·Filed 2019·Application pending·0 cites
- 4552US11011609B2Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2018·Granted May 18, 2021·0 cites·16 claims
- 4652US7666744B2Method of manufacturing a semiconductor device having a trench surrounding plural unit cellsNEC ELECTRONICS CORP·Filed 2008·Granted Feb 23, 2010·0 cites·10 claims
- 4752US6278156B1Dielectric separate type semiconductor deviceNEC CORP·Filed 1998·Granted Aug 21, 2001·13 cites·7 claims
- 4851US9570439B2Semiconductor device and semiconductor packageTOSHIBA KK·Filed 2015·Granted Feb 14, 2017·0 cites·13 claims
- 4950US7776693B2Method of manufacturing semiconductor apparatusNEC ELECTRONICS CORP·Filed 2007·Granted Aug 17, 2010·0 cites·8 claims
- 5048US5691231AMethod of manufacturing silicon on insulating substrateNEC CORP·Filed 1997·Granted Nov 25, 1997·13 cites·3 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →