Inventor · disambiguated record
Cheng-Tung Lin
Also filed as: LIN CHENG T · LIN CHENG-TUNG
68 granted patents·10 pending applications·556 citations·filing 1995–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD37TAIWAN SEMICONDUCTOR MFG24LIN CHENG-TUNG2NAT SCIENCE COUNCIL2IND TECH RES INST1
Top patents by PatentIndex Score
78 records- 0198US9224833B2Method of forming a vertical deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·33 cites·20 claims
- 0295US9899258B1Metal liner overhang reduction and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·20 cites·20 claims
- 0394US11916131B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 27, 2024·2 cites·20 claims
- 0492US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 0592US10505014B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·4 cites·17 claims
- 0692US8304841B2Metal gate transistor, integrated circuits, systems, and fabrication methods thereofXU JEFF J·Filed 2010·Granted Nov 6, 2012·22 cites·20 claims
- 0791US6042999ARobust dual damascene processTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 28, 2000·120 cites·41 claims
- 0890US12349435B2Vertical device having a protrusion sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 0990US9287170B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·8 cites·20 claims
- 1090US2025311351A1Vertical Device Having a Protrusion SourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1189US10854728B2Vertical device having a protrusion structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·2 cites·20 claims
- 1289US10157995B2Integrating junction formation of transistors with contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 18, 2018·9 cites·20 claims
- 1389US9318447B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·17 claims
- 1488US7947588B2Structure and method for a CMOS device with doped conducting metal oxide as the gate electrodeTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted May 24, 2011·16 cites·18 claims
- 1587US9853102B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 26, 2017·7 cites·20 claims
- 1687US9805968B2Vertical structure having an etch stop over portion of the sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 31, 2017·3 cites·20 claims
- 1787US9048087B2Methods for wet clean of oxide layers over epitaxial layersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·8 cites·20 claims
- 1886US7745890B2Hybrid metal fully silicided (FUSI) gateTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 29, 2010·11 cites·20 claims
- 1985US7396767B2Semiconductor structure including silicide regions and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 8, 2008·33 cites·30 claims
- 2085US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2183US10658234B2Formation method of interconnection structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 19, 2020·4 cites·20 claims
- 2282US8927418B1Systems and methods for reducing contact resistivity of semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·5 cites·20 claims
- 2382US7015126B2Method of forming silicided gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 21, 2006·28 cites·19 claims
- 2481US7625801B2Silicide formation with a pre-amorphous implantTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 1, 2009·7 cites·11 claims
- 2579US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 2677US9478631B2Vertical-gate-all-around devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·4 cites·19 claims
- 2776US10026658B2Methods for fabricating vertical-gate-all-around transistor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 17, 2018·3 cites·19 claims
- 2876US9624576B2Systems and methods for gap filling improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·3 cites·19 claims
- 2976US8198685B2Transistors with metal gate and methods for forming the sameLIU CHUNG-SHI·Filed 2008·Granted Jun 12, 2012·6 cites·18 claims
- 3075US7629655B2Semiconductor device with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 8, 2009·4 cites·20 claims
- 3173US8138076B2MOSFETs having stacked metal gate electrodes and methodLIN CHENG-TUNG·Filed 2008·Granted Mar 20, 2012·4 cites·15 claims
- 3272USD482930SHandle for kitchen utensilFiled 2003·Granted Dec 2, 2003·17 cites·1 claims
- 3370US11411094B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 3470US11227788B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 3570USD479434SHandle for kitchen utensilFiled 2002·Granted Sep 9, 2003·16 cites·1 claims
- 3670US6365325B1Aperture width reduction method for forming a patterned photoresist layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 2, 2002·29 cites·46 claims
- 3769US9966448B2Method of making a silicide beneath a vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 8, 2018·2 cites·20 claims
- 3869US7446042B2Method for silicide formation on semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 4, 2008·4 cites·20 claims
- 3968US5536676ALow temperature formation of silicided shallow junctions by ion implantation into thin silicon filmsNAT SCIENCE COUNCIL·Filed 1995·Granted Jul 16, 1996·30 cites·19 claims
- 4067US11444028B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 4166US9520296B2Semiconductor device having a low divot of alignment between a substrate and an isolation thereof and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 13, 2016·1 cites·17 claims
- 4265US9941394B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 10, 2018·1 cites·20 claims
- 4364US8822293B2Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devicesYU CHEN-HUA·Filed 2008·Granted Sep 2, 2014·2 cites·18 claims
- 4462US11056486B2Semiconductor device with multiple threshold voltage and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 4562US10707114B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 4662US7892961B2Methods for forming MOS devices with metal-inserted polysilicon gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 22, 2011·2 cites·17 claims
- 4762US7799628B2Advanced metal gate method and deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Sep 21, 2010·1 cites·20 claims
- 4862US5566997ACorn skewerJYUDUNG PLASTICS CORP·Filed 1996·Granted Oct 22, 1996·34 cites·1 claims
- 4961US10325994B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 18, 2019·0 cites·20 claims
- 5061US9614054B2Method of forming a vertical deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·0 cites·20 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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