Inventor · disambiguated record
Hsiang-Yi Wang
Also filed as: WANG HSIANG-YI
12 granted patents·66 citations·filing 2007–2020
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG5TAIWAN SEMICONDUCTOR MFG CO LTD4LIN CHENG-TUNG1XU JEFF J1YU CHEN-HUA1
Top patents by PatentIndex Score
12 records- 0192US8304841B2Metal gate transistor, integrated circuits, systems, and fabrication methods thereofXU JEFF J·Filed 2010·Granted Nov 6, 2012·22 cites·20 claims
- 0290US8487410B2Through-silicon vias for semicondcutor substrate and method of manufactureYU CHEN-HUA·Filed 2011·Granted Jul 16, 2013·8 cites·9 claims
- 0388US7947588B2Structure and method for a CMOS device with doped conducting metal oxide as the gate electrodeTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted May 24, 2011·16 cites·18 claims
- 0486US7745890B2Hybrid metal fully silicided (FUSI) gateTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 29, 2010·11 cites·20 claims
- 0577US10784162B2Method of making a semiconductor component having through-silicon viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·20 claims
- 0673US11545392B2Semiconductor component having through-silicon viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 0773US10115634B2Semiconductor component having through-silicon vias and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 30, 2018·1 cites·20 claims
- 0873US8138076B2MOSFETs having stacked metal gate electrodes and methodLIN CHENG-TUNG·Filed 2008·Granted Mar 20, 2012·4 cites·15 claims
- 0968US9418923B2Semiconductor component having through-silicon vias and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2016·1 cites·7 claims
- 1068US8575725B2Through-silicon vias for semicondcutor substrate and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 5, 2013·1 cites·21 claims
- 1162US7799628B2Advanced metal gate method and deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Sep 21, 2010·1 cites·20 claims
- 1247US7977772B2Hybrid metal fully silicided (FUSI) gateTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jul 12, 2011·0 cites·20 claims
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