Inventor · disambiguated record
Sun-Il Shim
Also filed as: SHIM SUN-IL
34 granted patents·4 pending applications·313 citations·filing 2001–2023
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD20SHIM SUN-IL6HWANG SUNG-MIN4JEONG JAE-HUN3KOREA INST SCI & TECH2
Top patents by PatentIndex Score
38 records- 0198US8295089B2Non-volatile memory device having vertical structure and method of operating the sameJEONG JAE-HUN·Filed 2010·Granted Oct 23, 2012·140 cites·10 claims
- 0297US11062784B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 13, 2021·4 cites·12 claims
- 0396US9390803B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSHIM SUN-IL·Filed 2015·Granted Jul 12, 2016·19 cites·20 claims
- 0495US8084805B2Three-dimensional microelectronic devices including repeating layer patterns of different thicknessesSHIM SUN-IL·Filed 2009·Granted Dec 27, 2011·41 cites·29 claims
- 0593US8492797B2Vertical structure semiconductor memory devices and methods of manufacturing the sameHWANG SUNG-MIN·Filed 2011·Granted Jul 23, 2013·13 cites·22 claims
- 0693US8450788B2Three-dimensional microelectronic devices including horizontal and vertical patternsSHIM SUN-IL·Filed 2011·Granted May 28, 2013·14 cites·13 claims
- 0791US9747995B2Nonvolatile memory devices, operating methods thereof and memory systems including the sameSHIM SUN-IL·Filed 2016·Granted Aug 29, 2017·7 cites·20 claims
- 0891US9378831B2Nonvolatile memory devices, operating methods thereof and memory systems including the sameHAN JINMAN·Filed 2015·Granted Jun 28, 2016·13 cites·20 claims
- 0990US8964476B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 24, 2015·7 cites·13 claims
- 1088US9711188B2Vertical non-volatile memory device including plural word line stacksSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·4 cites·16 claims
- 1186US8952438B2Three-dimensional microelectronic devices including horizontal and vertical patternsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 10, 2015·6 cites·16 claims
- 1285US11171151B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 9, 2021·4 cites·20 claims
- 1385US10134756B2Semiconductor deviceSHIM SUN IL·Filed 2017·Granted Nov 20, 2018·5 cites·20 claims
- 1484US11024638B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 1, 2021·4 cites·20 claims
- 1584US10199116B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSHIM SUN IL·Filed 2017·Granted Feb 5, 2019·3 cites·18 claims
- 1684US9336884B2Non-volatile memory device having vertical structure and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 10, 2016·4 cites·19 claims
- 1781US12322457B2Nonvolatile memory devices, operating methods thereof and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·19 claims
- 1880US9478291B2Non-volatile memory device having vertical structure and method of operating the sameJEONG JAE-HUN·Filed 2016·Granted Oct 25, 2016·2 cites·8 claims
- 1978US8492831B2Vertical non-volatile memory device and method of fabricating the sameHWANG SUNG-MIN·Filed 2009·Granted Jul 23, 2013·5 cites·17 claims
- 2077US11107826B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 31, 2021·2 cites·20 claims
- 2176US11715537B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·17 claims
- 2274US2021295895A1Nonvolatile memory devices, operating methods thereof and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 2373US10650903B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 12, 2020·1 cites·16 claims
- 2472US9208885B2Vertical structure semiconductor memory devices and methods of manufacturing the sameHWANG SUNG-MIN·Filed 2013·Granted Dec 8, 2015·2 cites·15 claims
- 2571US9564221B2Non-volatile memory device having vertical structure and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 7, 2017·1 cites·19 claims
- 2668US9373400B2Vertical structure semiconductor memory devices and methods of manufacturing the sameHWANG SUNG-MIN·Filed 2015·Granted Jun 21, 2016·1 cites·5 claims
- 2766US8772857B2Vertical memory devices and methods of manufacturing the sameCHOE BYEONG-IN·Filed 2011·Granted Jul 8, 2014·2 cites·19 claims
- 2863US12048156B2Vertical memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 2962US12207471B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 21, 2025·0 cites·19 claims
- 3062US8314457B2Non-volatile memory devicesKIM HYUN-SUK·Filed 2011·Granted Nov 20, 2012·1 cites·7 claims
- 3158US2024120007A1Semiconductor memory device, method for fabricating the same and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3257US9966115B2Vertical non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 8, 2018·0 cites·11 claims
- 3355US2013279233A1Vertical non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3454US2013044545A1Non-volatile memory device having vertical structure and method of operating the sameJEONG JAE-HUN·Filed 2012·Application pending·0 cites
- 3552US7973357B2Non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 5, 2011·0 cites·9 claims
- 3652US7151001B2Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivityKOREA INST SCI & TECH·Filed 2004·Granted Dec 19, 2006·3 cites·7 claims
- 3746US6392921B1Driving circuit for non destructive non volatile ferroelectric random access memoryKOREA INST SCI & TECH·Filed 2001·Granted May 21, 2002·5 cites·6 claims
- 3838US10983884B2Method and non-volatile memory device for repairing defective strings in units of string selection linesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 20, 2021·0 cites·17 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →