Inventor · disambiguated record
Chiu Ng
Also filed as: NG CHIU · NG CHIU H · NG CHIU HO
34 granted patents·3 pending applications·431 citations·filing 1994–2017
97Inventor score
Files withINT RECTIFIER CORP23INFINEON TECHNOLOGIES AMERICAS CORP10FRANCIS RICHARD1NG CHIU1NG CHIU HO1
Top patents by PatentIndex Score
37 records- 0196US6482681B1Hydrogen implant for buffer zone of punch-through non epi IGBTINT RECTIFIER CORP·Filed 2000·Granted Nov 19, 2002·133 cites·25 claims
- 0285US6707111B2Hydrogen implant for buffer zone of punch-through non EPI IGBTINT RECTIFIER CORP·Filed 2002·Granted Mar 16, 2004·32 cites·9 claims
- 0384US9859407B2IGBT having deep gate trenchINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 2, 2018·3 cites·20 claims
- 0484US9245985B2IGBT with buried emitter electrodeINT RECTIFIER CORP·Filed 2013·Granted Jan 26, 2016·5 cites·9 claims
- 0582US6426248B2Process for forming power MOSFET device in float zone, non-epitaxial siliconINT RECTIFIER CORP·Filed 2000·Granted Jul 30, 2002·32 cites·17 claims
- 0681US9299819B2Deep gate trench IGBTINT RECTIFIER CORP·Filed 2013·Granted Mar 29, 2016·4 cites·13 claims
- 0780US9496378B2IGBT with buried emitter electrodeINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Nov 15, 2016·2 cites·19 claims
- 0880US6919248B2Angled implant for shorter trench emitterINT RECTIFIER CORP·Filed 2003·Granted Jul 19, 2005·21 cites·8 claims
- 0977US9871128B2Bipolar semiconductor device with sub-cathode enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 16, 2018·3 cites·18 claims
- 1076US7485920B2Process to create buried heavy metal at selected depthINT RECTIFIER CORP·Filed 2002·Granted Feb 3, 2009·19 cites·10 claims
- 1172US7534666B2High voltage non punch through IGBT for switch mode power suppliesINT RECTIFIER CORP·Filed 2005·Granted May 19, 2009·5 cites·12 claims
- 1272US6683331B2Trench IGBTINT RECTIFIER CORP·Filed 2002·Granted Jan 27, 2004·18 cites·33 claims
- 1372US6627961B1Hybrid IGBT and MOSFET for zero current at zero voltageINT RECTIFIER CORP·Filed 2000·Granted Sep 30, 2003·18 cites·6 claims
- 1472US6603153B2Fast recovery diode and method for its manufactureINT RECTIFIER CORP·Filed 2001·Granted Aug 5, 2003·15 cites·4 claims
- 1570US6261874B1Fast recovery diode and method for its manufactureINT RECTIFIER CORP·Filed 2000·Granted Jul 17, 2001·13 cites·6 claims
- 1670US6242288B1Anneal-free process for forming weak collectorINT RECTIFIER CORP·Filed 2000·Granted Jun 5, 2001·13 cites·16 claims
- 1770US5766966APower transistor device having ultra deep increased concentration regionINT RECTIFIER CORP·Filed 1996·Granted Jun 16, 1998·41 cites·21 claims
- 1869US7956419B2Trench IGBT with depletion stop layerINT RECTIFIER CORP·Filed 2005·Granted Jun 7, 2011·4 cites·14 claims
- 1967US7335947B2Angled implant for shorter trench emitterINT RECTIFIER CORP·Filed 2005·Granted Feb 26, 2008·2 cites·10 claims
- 2065USH1412HSabot stiffener for kinetic energy projectileUS ARMY·Filed 1994·Granted Feb 7, 1995·21 cites·7 claims
- 2164US8314002B2Semiconductor device having increased switching speedFRANCIS RICHARD·Filed 2005·Granted Nov 20, 2012·4 cites·13 claims
- 2263US10164078B2Bipolar semiconductor device with multi-trench enhancement regionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Dec 25, 2018·1 cites·18 claims
- 2359US8067797B2Variable threshold trench IGBT with offset emitter contactsNG CHIU·Filed 2008·Granted Nov 29, 2011·4 cites·14 claims
- 2453US6753580B1Diode with weak anodeINT RECTIFIER CORP·Filed 2000·Granted Jun 22, 2004·8 cites·8 claims
- 2552US10115812B2Semiconductor device having a superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Oct 30, 2018·0 cites·21 claims
- 2650US9799725B2IGBT having a deep superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Oct 24, 2017·0 cites·21 claims
- 2750US9685506B2IGBT having an inter-trench superjunction structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Jun 20, 2017·0 cites·20 claims
- 2850US7005702B1IGBT with amorphous silicon transparent collectorINT RECTIFIER CORP·Filed 2000·Granted Feb 28, 2006·4 cites·13 claims
- 2948US9768284B2Bipolar semiconductor device having a charge-balanced inter-trench structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 19, 2017·0 cites·14 claims
- 3046US7507608B2IGBT with amorphous silicon transparent collectorINT RECTIFIER CORP·Filed 2005·Granted Mar 24, 2009·0 cites·9 claims
- 3142US9831330B2Bipolar semiconductor device having a deep charge-balanced structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Nov 28, 2017·0 cites·10 claims
- 3241US7655977B2Trench IGBT for highly capacitive loadsINT RECTIFIER CORP·Filed 2005·Granted Feb 2, 2010·0 cites·14 claims
- 3339US6197649B1Process for manufacturing planar fast recovery diode using reduced number of masking stepsINT RECTIFIER CORP·Filed 1998·Granted Mar 6, 2001·6 cites·20 claims
- 3439US2007063269A1Trench IGBT with increased short circuit capabilityINT RECTIFIER CORP·Filed 2005·Application pending·0 cites
- 3538US2007034941A1Deep N diffusion for trench IGBTINT RECTIFIER CORP·Filed 2005·Application pending·0 cites
- 3634US9656288B2Dispensing device for conveniently dispensing materialNG CHIU HO·Filed 2015·Granted May 23, 2017·0 cites·1 claims
- 3734US2017271445A1Bipolar Semiconductor Device Having Localized Enhancement RegionsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Application pending·0 cites
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