Inventor · disambiguated record
Yi-Fang Pai
Also filed as: PAI YI-FANG
33 granted patents·8 pending applications·188 citations·filing 2009–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30SU CHIEN CHANG3TAIWAN SEMICONDUCTOR MFG3HUANG SHIH-HSIEN1TSAI CHUN HSIUNG1
Top patents by PatentIndex Score
41 records- 0197US9997631B2Methods for reducing contact resistance in semiconductors manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·31 cites·20 claims
- 0297US8263451B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2010·Granted Sep 11, 2012·83 cites·20 claims
- 0396US11581425B2Method for manufacturing semiconductor structure with enlarged volumes of source-drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
- 0489US9666691B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2012·Granted May 30, 2017·9 cites·17 claims
- 0589US9012310B2Epitaxial formation of source and drain regionsTSAI CHUN HSIUNG·Filed 2012·Granted Apr 21, 2015·8 cites·20 claims
- 0687US9647115B1Semiconductor structure with enhanced contact and method of manufacture the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·6 cites·20 claims
- 0787US9443847B2Epitaxial formation of source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·4 cites·20 claims
- 0887US8778767B2Integrated circuits and fabrication methods thereofHUANG SHIH-HSIEN·Filed 2011·Granted Jul 15, 2014·5 cites·20 claims
- 0985US12068395B2Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·20 claims
- 1085US8906789B2Asymmetric cyclic desposition etch epitaxyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 9, 2014·9 cites·20 claims
- 1185US2025351404A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1284US2025374663A1Source/Drain Regions of Semiconductor Devices and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1384US2023298891A1Integrated circuits having source/drain structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1482US11923200B2Integrated circuits having source/drain structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 1582US10340190B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 2, 2019·3 cites·20 claims
- 1682US9117905B2Method for incorporating impurity element in EPI silicon processSU CHIEN-CHANG·Filed 2009·Granted Aug 25, 2015·7 cites·20 claims
- 1781US12389671B2Source/drain regions of semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 1879US10734517B2Integrated circuits having source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 4, 2020·1 cites·12 claims
- 1979US9786780B2Integrated circuits having source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 10, 2017·2 cites·20 claims
- 2079US9412870B2Device with engineered epitaxial region and methods of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·2 cites·20 claims
- 2178US2024363729A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2277US9117843B2Device with engineered epitaxial region and methods of making sameWONG KING-YUEN·Filed 2011·Granted Aug 25, 2015·3 cites·20 claims
- 2377US8921177B2Method of fabricating an integrated circuit deviceYEH MING-HSI·Filed 2011·Granted Dec 30, 2014·8 cites·7 claims
- 2476US2025344484A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2576US2024355826A1Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2675US11373867B2Integrated circuits having source/drain structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 2774US12057450B2Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 2874US11804487B2Source/drain regions of semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 2974US2024363418A1Fin field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3069US11296080B2Source/drain regions of semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 3168US2025089340A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3267US11652105B2Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 3367US8343872B2Method of forming strained structures with compound profiles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 1, 2013·3 cites·13 claims
- 3463US12094778B2Fin field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 3559US10861935B2Semiconductor device source/drain region with arsenic-containing barrier regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 3657US12205849B2Semiconductor device structure with source/drain structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 3756US10374038B2Semiconductor device source/drain region with arsenic-containing barrier regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 6, 2019·0 cites·20 claims
- 3851US9356150B2Method for incorporating impurity element in EPI silicon processTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·0 cites·20 claims
- 3945US9564509B2Method of fabricating an integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 7, 2017·0 cites·20 claims
- 4042US10134896B2Cyclic deposition etch chemical vapor deposition epitaxy to reduce EPI abnormalityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 20, 2018·0 cites·14 claims
- 4139US9537004B2Source/drain formation and structureWU CHII-MING·Filed 2011·Granted Jan 3, 2017·0 cites·18 claims
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