Inventor · disambiguated record
Yuefeng Gong
Also filed as: GONG YUEFENG
2 granted patents·2 citations·filing 2012–2012
35Inventor score
Technology areasH01L
Files withSHANGHAI INST MICROSYS & INF2
Top patents by PatentIndex Score
2 records- 0168US9276202B2Phase-change storage unit containing TiSiN material layer and method for preparing the sameSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Mar 1, 2016·2 cites·12 claims
- 0232US9362493B2Phase-change storage unit for replacing DRAM and FLASH and manufacturing method thereofSHANGHAI INST MICROSYS & INF·Filed 2012·Granted Jun 7, 2016·0 cites·6 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →