Inventor · disambiguated record
Masazumi Matsuura
Also filed as: MATSUURA MASAZUMI
39 granted patents·6 pending applications·1,072 citations·filing 1990–2017
98Inventor score
Files withMITSUBISHI ELECTRIC CORP25RENESAS ELECTRONICS CORP8RENESAS TECH CORP8MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3FURUSAWA TAKESHI1
Top patents by PatentIndex Score
45 records- 0197US5319247ASemiconductor device having an interlayer insulating film of high crack resistanceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 7, 1994·319 cites·7 claims
- 0292US7605448B2Semiconductor device with seal ringRENESAS TECH CORP·Filed 2005·Granted Oct 20, 2009·22 cites·35 claims
- 0392US6124641ASemiconductor device organic insulator filmMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 26, 2000·105 cites·7 claims
- 0491US5598027ASemiconductor device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 28, 1997·105 cites·12 claims
- 0589US5703404ASemiconductor device comprising an SiOF insulative filmMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 30, 1997·100 cites·8 claims
- 0685US5926732AMethod of making a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 20, 1999·74 cites·4 claims
- 0781US8018030B2Semiconductor chip with seal ring and sacrificial corner patternRENESAS ELECTRONICS CORP·Filed 2009·Granted Sep 13, 2011·7 cites·36 claims
- 0880US9245800B2Method of manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Jan 26, 2016·3 cites·7 claims
- 0980US7208408B2Method for fabricating a dual damascene contact in an insulating film having density gradually varying in the thickness directionMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Apr 24, 2007·6 cites·9 claims
- 1077US5459105AMethod of manufacturing a semiconductor device having multilayer insulating filmsMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 17, 1995·48 cites·9 claims
- 1175US9035460B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2012·Granted May 19, 2015·3 cites·15 claims
- 1275US8963291B2Semiconductor chip with seal ring and sacrificial corner patternFURUSAWA TAKESHI·Filed 2011·Granted Feb 24, 2015·3 cites·8 claims
- 1374US7202565B2Semiconductor device which employs an interlayer insulating film of a low mechanical strength and a highly reliable metal pad, and a method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 10, 2007·19 cites·10 claims
- 1471US6737746B2Semiconductor device containing copper diffusion preventive film of silicon carbideRENESAS TECH CORP·Filed 2002·Granted May 18, 2004·17 cites·6 claims
- 1569US5047127AOzone generating methodMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Sep 10, 1991·22 cites·2 claims
- 1667US9368459B2Semiconductor chip with seal ring and sacrificial corner patternRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 14, 2016·1 cites·1 claims
- 1767US7602063B2Semiconductor device and manufacturing method thereforRENESAS TECH CORP·Filed 2005·Granted Oct 13, 2009·2 cites·13 claims
- 1867US6903027B2Method of forming dielectric film and dielectric filmRENESAS TECH CORP·Filed 2002·Granted Jun 7, 2005·9 cites·16 claims
- 1967US6034418ASemiconductor device having improved insulation film and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 7, 2000·27 cites·5 claims
- 2064US5177588ASemiconductor device including nitride layerMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 5, 1993·41 cites·5 claims
- 2163US7671473B2Semiconductor device and method of fabricating the sameRENESAS TECH CORP·Filed 2006·Granted Mar 2, 2010·2 cites·20 claims
- 2263US6930394B2Electronic device includes an insulating film having density or carbon concentration varying gradually in the direction of the thickness and a conductive film formed thereinMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Aug 16, 2005·7 cites·14 claims
- 2363US5811849ASemiconductor device and manufacturing process thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 22, 1998·24 cites·19 claims
- 2461US6399424B1Method of manufacturing contact structureMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 4, 2002·11 cites·15 claims
- 2559US6333278B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Dec 25, 2001·5 cites·3 claims
- 2657US5132774ASemiconductor device including interlayer insulating filmMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 21, 1992·29 cites·6 claims
- 2756US7960279B2Semiconductor device and manufacturing method thereforRENESAS ELECTRONICS CORP·Filed 2009·Granted Jun 14, 2011·0 cites·9 claims
- 2854US5937322ASemiconductor manufacturing process with oxide film formed on an uneven surface patternMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 10, 1999·16 cites·20 claims
- 2952US9721873B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 1, 2017·0 cites·7 claims
- 3051US9991162B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Jun 5, 2018·0 cites·5 claims
- 3150US5250468AMethod of manufacturing semiconductor device including interlaying insulating filmMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 5, 1993·21 cites·5 claims
- 3249US6737319B2Method of manufacturing semiconductor device and semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted May 18, 2004·3 cites·8 claims
- 3348US2007145583A1Semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 3446US6509648B1Method of manufacturing semiconductor device and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 21, 2003·2 cites·6 claims
- 3545US7981790B2Semiconductor device and method of fabricating the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Jul 19, 2011·0 cites·6 claims
- 3645US2008093709A1Manufacturing method of semiconductor device and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Application pending·0 cites
- 3743US2007114668A1Semiconductor deviceRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3841US2006103025A1Semiconductor device including sealing ringRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 3940US6551921B2Method of polishing a stack of dielectric layers including a fluorine containing silicon oxide layerMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 22, 2003·0 cites·11 claims
- 4040US2002090833A1Method of forming dielectric film and dielectric filmMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 4139US6228778B1Semiconductor device having improved insulation film and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 8, 2001·6 cites·4 claims
- 4239US2003015798A1Semiconductor device and method of fabricating the semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 4337US5985769AMethod of forming an interlayer insulating filmMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 16, 1999·6 cites·15 claims
- 4436US5721156AMethod of manufacturing a semiconductor device with a planarized integrated circuitMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 24, 1998·4 cites·27 claims
- 4534US6222256B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 24, 2001·3 cites·9 claims
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