Inventor · disambiguated record
Jason Henning
Also filed as: HENNING JASON · HENNING JASON P · HENNING JASON PATRICK
27 granted patents·3 pending applications·362 citations·filing 1999–2024
96Inventor score
Top patents by PatentIndex Score
30 records- 0195US8680587B2Schottky diodeHENNING JASON PATRICK·Filed 2011·Granted Mar 25, 2014·22 cites·38 claims
- 0295US8563372B2Methods of forming contact structures including alternating metal and silicon layers and related devicesHAGLEITNER HELMUT·Filed 2010·Granted Oct 22, 2013·40 cites·30 claims
- 0393US7525122B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2005·Granted Apr 28, 2009·22 cites·39 claims
- 0493US7265399B2Asymetric layout structures for transistors and methods of fabricating the sameCREE INC·Filed 2004·Granted Sep 4, 2007·78 cites·36 claims
- 0591US9673283B2Power module for supporting high current densitiesHENNING JASON PATRICK·Filed 2012·Granted Jun 6, 2017·9 cites·39 claims
- 0689US7598576B2Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devicesCREE INC·Filed 2006·Granted Oct 6, 2009·13 cites·25 claims
- 0789US6362495B1Dual-metal-trench silicon carbide Schottky pinch rectifierPURDUE RESEARCH FOUNDATION·Filed 1999·Granted Mar 26, 2002·90 cites·10 claims
- 0888US8664665B2Schottky diode employing recesses for elements of junction barrier arrayHENNING JASON PATRICK·Filed 2011·Granted Mar 4, 2014·10 cites·29 claims
- 0988US7875545B2Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devicesCREE INC·Filed 2008·Granted Jan 25, 2011·14 cites·19 claims
- 1088US7858460B2Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitridesCREE INC·Filed 2009·Granted Dec 28, 2010·10 cites·25 claims
- 1187US7696584B2Reduced leakage power devices by inversion layer surface passivationCREE INC·Filed 2006·Granted Apr 13, 2010·10 cites·30 claims
- 1286US8803277B2Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating sameHENNING JASON·Filed 2011·Granted Aug 12, 2014·10 cites·17 claims
- 1384US8432012B2Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating sameZHANG QINGCHUN·Filed 2011·Granted Apr 30, 2013·6 cites·12 claims
- 1479US9240476B2Field effect transistor devices with buried well regions and epitaxial layersCREE INC·Filed 2013·Granted Jan 19, 2016·5 cites·7 claims
- 1578US9865750B2Schottky diodeCREE INC·Filed 2015·Granted Jan 9, 2018·2 cites·24 claims
- 1673US9231122B2Schottky diodeCREE INC·Filed 2014·Granted Jan 5, 2016·2 cites·21 claims
- 1771US9385182B2Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating sameCREE INC·Filed 2014·Granted Jul 5, 2016·2 cites·18 claims
- 1871US8618582B2Edge termination structure employing recesses for edge termination elementsHENNING JASON PATRICK·Filed 2011·Granted Dec 31, 2013·3 cites·35 claims
- 1966US8049272B2Transistors having implanted channel layers and methods of fabricating the sameCREE INC·Filed 2007·Granted Nov 1, 2011·3 cites·30 claims
- 2063US7915703B2Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the sameCREE INC·Filed 2009·Granted Mar 29, 2011·2 cites·26 claims
- 2162US11024731B2Power module for supporting high current densitiesCREE INC·Filed 2018·Granted Jun 1, 2021·0 cites·22 claims
- 2259US10153364B2Power module having a switch module for supporting high current densitiesCREE INC·Filed 2017·Granted Dec 11, 2018·0 cites·22 claims
- 2357US7880172B2Transistors having implanted channels and implanted P-type regions beneath the source regionCREE INC·Filed 2007·Granted Feb 1, 2011·1 cites·42 claims
- 2457US2025233575A1Surface acoustic wave structures with embedded acoustic reflectorsQORVO US INC·Filed 2024·Application pending·0 cites
- 2555US9024327B2Metallization structure for high power microelectronic devicesWARD ALLAN·Filed 2007·Granted May 5, 2015·2 cites·24 claims
- 2655US7737476B2Metal-semiconductor field effect transistors (MESFETs) having self-aligned structuresCREE INC·Filed 2007·Granted Jun 15, 2010·1 cites·36 claims
- 2750US6528827B2MSM device and method of manufacturing sameOPTOLYNX INC·Filed 2001·Granted Mar 4, 2003·5 cites·14 claims
- 2843US9318623B2Recessed termination structures and methods of fabricating electronic devices including recessed termination structuresZHANG QINGCHUN·Filed 2011·Granted Apr 19, 2016·0 cites·23 claims
- 2940US2006006393A1Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devicesWARD ALLAN III·Filed 2004·Application pending·0 cites
- 3039US2003048694A1Material mixing device and methodTAH IND INC·Filed 2001·Application pending·0 cites
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