Inventor · disambiguated record
Chien-Hsun Wang
Also filed as: WANG CHIEN-HSUN
47 granted patents·3 pending applications·479 citations·filing 2003–2020
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21TAIWAN SEMICONDUCTOR MFG13WANG CHIEN-HSUN5ORIENTAL SYSTEM TECHNOLOGY INC4CHANG CHIH-HAO2
Top patents by PatentIndex Score
50 records- 0199US8703565B2Bottom-notched SiGe FinFET formation using condensationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 22, 2014·207 cites·19 claims
- 0297US8623728B2Method for forming high germanium concentration SiGe stressorCHANG CHIH-HAO·Filed 2010·Granted Jan 7, 2014·38 cites·20 claims
- 0397US8395195B2Bottom-notched SiGe FinFET formation using condensationCHANG CHIH-HAO·Filed 2010·Granted Mar 12, 2013·59 cites·19 claims
- 0495US8486769B2Method for forming metrology structures from fins in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Jul 16, 2013·23 cites·20 claims
- 0594US8525267B2Device and method for forming Fins in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Sep 3, 2013·22 cites·17 claims
- 0693US9660082B2Integrated circuit transistor structure with high germanium concentration SiGe stressorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·11 cites·16 claims
- 0791US9312186B1Method of forming horizontal gate all around structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·10 cites·20 claims
- 0891US8806397B2Method and device for increasing fin device density for unaligned finsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·5 cites·20 claims
- 0991US8633076B2Method for adjusting fin width in integrated circuitryWANG CHIEN-HSUN·Filed 2010·Granted Jan 21, 2014·14 cites·20 claims
- 1089US9318447B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·17 claims
- 1187US9853102B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 26, 2017·7 cites·20 claims
- 1286US8502502B2Electricity storing device and electronic deviceHUANG SHYH-CHING·Filed 2010·Granted Aug 6, 2013·20 cites·12 claims
- 1384US9048301B2Nanowire MOSFET with support structures for source and drainTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·4 cites·23 claims
- 1482US9786757B2Method of forming horizontal gate all around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 10, 2017·3 cites·20 claims
- 1581US9263295B2Nanowire MOSFET with support structures for source and drainTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 16, 2016·2 cites·22 claims
- 1678US9184289B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·3 cites·20 claims
- 1777US9478631B2Vertical-gate-all-around devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·4 cites·19 claims
- 1875US8769446B2Method and device for increasing fin device density for unaligned finsWANG CHIEN-HSUN·Filed 2011·Granted Jul 1, 2014·3 cites·20 claims
- 1974US8526315B2Flow state attributes for producing media flow statistics at a network nodeXU XIAODE·Filed 2007·Granted Sep 3, 2013·7 cites·17 claims
- 2070US11227788B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 2170US8145789B1Method providing a single console control point for a network device clusterSTAMLER ARNOLD·Filed 2003·Granted Mar 27, 2012·20 cites·20 claims
- 2267US9472550B2Adjusted fin width in integrated circuitryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 18, 2016·2 cites·6 claims
- 2367US9147766B2Semiconductor device having fin-type channel and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·1 cites·14 claims
- 2465US9941394B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 10, 2018·1 cites·20 claims
- 2565US9214513B2Fin structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 15, 2015·1 cites·19 claims
- 2662US10707114B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 2761US10325994B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 18, 2019·0 cites·20 claims
- 2861US9166035B2Delta doping layer in MOSFET source/drain regionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·1 cites·18 claims
- 2960US9536413B2Verifying and monitoring stove operationPERSIA INC·Filed 2014·Granted Jan 3, 2017·4 cites·20 claims
- 3059US10693003B2Integrated circuit transistor structure with high germanium concentration SiGe stressorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 23, 2020·0 cites·20 claims
- 3159US10418271B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 17, 2019·0 cites·20 claims
- 3259US9026959B2Method and device for increasing fin device density for unaligned finsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 5, 2015·0 cites·20 claims
- 3357US9954069B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·0 cites·20 claims
- 3457US9773868B2Nanowire MOSFET with support structures for source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·0 cites·40 claims
- 3556US11245033B2Semiconductor devices with core-shell structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 8, 2022·0 cites·20 claims
- 3656US10553718B2Semiconductor devices with core-shell structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 4, 2020·0 cites·19 claims
- 3755US9620618B2Transistor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 11, 2017·0 cites·20 claims
- 3853US9871101B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 16, 2018·0 cites·20 claims
- 3953US9735261B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 15, 2017·0 cites·20 claims
- 4053US9276084B2Transistor and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 1, 2016·0 cites·15 claims
- 4152US9865460B2Semiconductor device having fin-type channel and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 9, 2018·0 cites·20 claims
- 4249US9911812B2Semiconductor device having a fin shell covering a fin coreTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·0 cites·20 claims
- 4348US9646823B2Semiconductor dielectric interface and gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 9, 2017·0 cites·19 claims
- 4447US2014209800A1Non-dispersive infrared gas detector, and method of stabilizing infrared emission of an incandescent lampORIENTAL SYSTEM TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 4542US2018136182A1Accurate multi-gas analyzerORIENTAL SYSTEM TECHNOLOGY INC·Filed 2016·Application pending·0 cites
- 4641US9390913B2Semiconductor dielectric interface and gate stackTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 12, 2016·0 cites·14 claims
- 4739US2017100057A1Portable ndir breath acetone measurement apparatus with sub-ppm accuracyORIENTAL SYSTEM TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 4830US9646958B2Integrated circuits including dummy structures and methods of forming the sameWANG CHIEN-HSUN·Filed 2010·Granted May 9, 2017·0 cites·18 claims
- 4929US10601649B1Stack switching detection and provisioningCISCO TECH INC·Filed 2017·Granted Mar 24, 2020·0 cites·20 claims
- 5025USD786721SLight chamber of a gas sensorORIENTAL SYSTEM TECHNOLOGY INC·Filed 2015·Granted May 16, 2017·1 cites·1 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →