Inventor · disambiguated record
Masahito Kodama
Also filed as: KODAMA MASAHITO
6 granted patents·3 pending applications·214 citations·filing 1996–2014
84Inventor score
Files withTOYODA CHUO KENKYUSHO KK3TOYOTA CHUO KENKYUSHO KK2DENSO CORP1SUGIMOTO MASAHIRO1TOYODA GOSEI KK1
Top patents by PatentIndex Score
9 records- 0192US6700175B1Vertical semiconductor device having alternating conductivity semiconductor regionsTOYODA CHUO KENKYUSHO KK·Filed 2000·Granted Mar 2, 2004·87 cites·28 claims
- 0288US6072215ASemiconductor device including lateral MOS elementTOYODA CHUO KENKYUSHO KK·Filed 1999·Granted Jun 6, 2000·83 cites·16 claims
- 0369US5708286AInsulated gate semiconductor device and fabrication method thereforTOYODA CHUO KENKYUSHO KK·Filed 1996·Granted Jan 13, 1998·32 cites·11 claims
- 0467US10381469B2Semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2014·Granted Aug 13, 2019·2 cites·12 claims
- 0564US6844246B2Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on itTOYODA GOSEI KK·Filed 2002·Granted Jan 18, 2005·10 cites·13 claims
- 0649US7696071B2Group III nitride based semiconductor and production method thereforTOYOTA CHUO KENKYUSHO KK·Filed 2007·Granted Apr 13, 2010·0 cites·13 claims
- 0742US2008105954A1Group III nitride based semiconductor device having trench structure or mesa structure and production method thereforTOYOTA CHUO KENKYUSHO KK·Filed 2007·Application pending·0 cites
- 0841US2011316049A1Nitride semiconductor device and method of manufacturing the sameSUGIMOTO MASAHIRO·Filed 2009·Application pending·0 cites
- 0939US2008142845A1HEMT including MIS structureTOYOTA MOTOR CO LTD·Filed 2007·Application pending·0 cites
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