Inventor

PILLARISETTY RAVI

US396 patents

⚠️ This page may combine multiple inventors who share the name “PILLARISETTY RAVI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PILLARISETTY RAVI

INTEL CORP

Unity beta ratio tri-gate transistor static random access memory (SRAM)

Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains

Quantum circuit assemblies with triaxial cables

Transistors with high concentration of boron doped germanium

Isolated Germanium nanowire on Silicon fin

Non-planar gate all-around device and method of fabrication thereof

Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains

Apparatus and methods for forming a modulation doped non-planar transistor

Methods of forming nickel sulfide film on a semiconductor device

Double-sided quantum dot devices

Quantum dot devices with modulation doped stacks

Integrated quantum circuit assemblies for cooling apparatus

Transistors with high concentration of germanium

Vertical 1T-1C DRAM array

Quantum dot devices

Vertical flux bias lines coupled to vertical squid loops in superconducting qubits

Quantum circuit assemblies with Josephson junctions utilizing resistive switching materials

Quantum dot devices

Quantum circuit assemblies with vertically-stacked parallel-plate capacitors

Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layers

Group III-N nanowire transistors

Techniques for forming non-planar resistive memory cells

Non-planar gate all-around device and method of fabrication thereof

Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices

Group III-N nanowire transistors

Semiconductor device having germanium active layer with underlying diffusion barrier layer

Aspect ratio trapping (ART) for fabricating vertical semiconductor devices

Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains

Variable gate width for gate all-around transistors

Deep gate-all-around semiconductor device having germanium or group III-V active layer

Hybrid phase field effect transistor

PILLARISETTY RAVI

Trench confined epitaxially grown device layer(s)

Non-planar germanium quantum well devices

Trench confined epitaxially grown device layer(s)

Contact techniques and configurations for reducing parasitic resistance in nanowire transistors

Non-planar germanium quantum well devices

RACHMADY WILLY

Non-planar gate all-around device and method of fabrication thereof

Semiconductor devices with germanium-rich active layers and doped transition layers

Variable gate width for gate all-around transistors

Non-planar quantum well device having interfacial layer and method of forming same

DEWEY GILBERT

Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack

RADOSAVLJEVIC MARKO

CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture

Non-planar semiconductor device having channel region with low band-gap cladding layer

THEN HAN WUI

Group III-N nanowire transistors

High voltage field effect transistors

MURTHY ANAND S

Transistors with high concentration of boron doped germanium

DOYLE BRIAN S

Recessed channel array transistor (RCAT) structures

MAJHI PRASHANT

Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains

RAKSHIT TITASH

Trigate transistor having extended metal gate electrode