Inventor · disambiguated record
Atsuki Ono
Also filed as: ONO ATSUKI
15 granted patents·2 pending applications·334 citations·filing 1996–2012
94Inventor score
Top patents by PatentIndex Score
17 records- 0192US6432776B1Method of manufacturing semiconductor deviceNEC CORP·Filed 2000·Granted Aug 13, 2002·73 cites·18 claims
- 0287US6261889B1Manufacturing method of semiconductor deviceNEC CORP·Filed 2000·Granted Jul 17, 2001·42 cites·12 claims
- 0386US6436783B1Method of forming MOS transistorNEC CORP·Filed 2000·Granted Aug 20, 2002·38 cites·12 claims
- 0479US6127711ASemiconductor device having plural air gaps for decreasing parasitic capacitanceNEC CORP·Filed 1998·Granted Oct 3, 2000·44 cites·6 claims
- 0569US8013421B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2008·Granted Sep 6, 2011·3 cites·21 claims
- 0669US6166413ASemiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereofNEC CORP·Filed 1997·Granted Dec 26, 2000·26 cites·7 claims
- 0769US5780896ASemiconductor device having shallow impurity region without short-circuit between gate electrode and source and drain regions and process of fabrication thereofNEC CORP·Filed 1996·Granted Jul 14, 1998·39 cites·4 claims
- 0866US5966606AMethod for manufacturing a MOSFET having a side-wall film formed through nitridation of the gate electrodeNEC CORP·Filed 1997·Granted Oct 12, 1999·25 cites·4 claims
- 0964US6489236B1Method for manufacturing a semiconductor device having a silicide layerNEC CORP·Filed 2000·Granted Dec 3, 2002·9 cites·7 claims
- 1062US6362059B2Production of a semiconductor device having a P-wellNEC CORP·Filed 2001·Granted Mar 26, 2002·11 cites·7 claims
- 1157US8324709B2Semiconductor deviceONO ATSUKI·Filed 2011·Granted Dec 4, 2012·1 cites·15 claims
- 1253US8643139B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2012·Granted Feb 4, 2014·0 cites·20 claims
- 1351US6518075B2Method of forming S/D extension regions and pocket regions based on formulated relationship between design and measured values of gate lengthNEC CORP·Filed 2001·Granted Feb 11, 2003·3 cites·20 claims
- 1451US6300239B1Method of manufacturing semiconductor deviceNEC CORP·Filed 1999·Granted Oct 9, 2001·16 cites·15 claims
- 1550US6486012B1Semiconductor device having field effect transistors different in thickness of gate electrodes and process of fabrication thereofNEC CORP·Filed 2000·Granted Nov 26, 2002·4 cites·7 claims
- 1633US2002068407A1MOS transistor fabrication methodFiled 2001·Application pending·0 cites
- 1733US2002068405A1Fabrication method for a semiconductor integrated circuit deviceFiled 2001·Application pending·0 cites
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