Inventor · disambiguated record
Wiebe B. De Boer
Also filed as: DE BOER WIEBE · DE BOER WIEBE B · DE BOER WIEBE BARTELD
13 granted patents·222 citations·filing 1996–2003
92Inventor score
Top patents by PatentIndex Score
13 records- 0190US6242762B1Semiconductor device with a tunnel diode and method of manufacturing samePHILIPS CORP·Filed 1998·Granted Jun 5, 2001·77 cites·6 claims
- 0275US6459133B1Enhanced flux semiconductor device with mesa and method of manufacturing sameKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Oct 1, 2002·24 cites·13 claims
- 0363US6579752B2Phosphorus dopant control in low-temperature Si and SiGe epitaxyKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Jun 17, 2003·8 cites·8 claims
- 0460US7921802B2System and method for suppression of wafer temperature drift in cold-wall CVD systemsNXP BV·Filed 2003·Granted Apr 12, 2011·7 cites·20 claims
- 0556US6100152AMethod of manufacturing a semiconductor device with a fast bipolar transistorPHILIPS CORP·Filed 1999·Granted Aug 8, 2000·25 cites·9 claims
- 0653US6368946B1Manufacture of a semiconductor device with an epitaxial semiconductor zonePHILIPS CORP·Filed 1997·Granted Apr 9, 2002·20 cites·1 claims
- 0750US5915187AMethod of manufacturing a semiconductor device with a pn junction provided through epitaxyPHILIPS CORP·Filed 1996·Granted Jun 22, 1999·19 cites·4 claims
- 0849US5895248AManufacture of a semiconductor device with selectively deposited semiconductor zonePHILIPS CORP·Filed 1996·Granted Apr 20, 1999·18 cites·9 claims
- 0948US6838359B2Suppression of n-type autodoping in low-temperature Si and SiGe epitaxyKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Jan 4, 2005·2 cites·11 claims
- 1045US6436785B2Method of manufacturing semiconductor device with a tunnel diodeKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Aug 20, 2002·2 cites·17 claims
- 1143US6218222B1Method of manufacturing a semiconductor device with a schottky junctionPHILIPS CORP·Filed 1998·Granted Apr 17, 2001·8 cites·10 claims
- 1236US6417536B2Semiconductor device with memory capacitor having an electrode of Si1-x GexKONINKL PHILIPS ELECTRONICS NV·Filed 1998·Granted Jul 9, 2002·8 cites·1 claims
- 1331US6417526B2Semiconductor device having a rectifying junction and method of manufacturing sameKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Jul 9, 2002·4 cites·18 claims
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