Inventor · disambiguated record
Shui-Ming Cheng
Also filed as: CHENG SHUI-MING
17 granted patents·7 pending applications·459 citations·filing 2001–2022
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG11TAIWAN SEMICONDUCTOR MFG CO LTD5CHEN HAO-YU1CHENG SHUI-MING1TAIWAIN SEMICONDUCTOR MFG COMP1
Top patents by PatentIndex Score
24 records- 0196US7176522B2Semiconductor device having high drive current and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 13, 2007·170 cites·15 claims
- 0294US7611938B2Semiconductor device having high drive current and method of manufacture thereforTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 3, 2009·39 cites·26 claims
- 0394US7608515B2Diffusion layer for stressed semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 27, 2009·28 cites·20 claims
- 0493US7348248B2CMOS transistor with high drive current and low sheet resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 25, 2008·32 cites·15 claims
- 0590US11418025B2Device and method for electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
- 0688US6872626B1Method of forming a source/drain and a transistor employing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 29, 2005·40 cites·15 claims
- 0786US7315051B2Method of forming a source/drain and a transistor employing the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 1, 2008·12 cites·20 claims
- 0886US6960512B2Method for manufacturing a semiconductor device having an improved disposable spacerTAIWAIN SEMICONDUCTOR MFG COMP·Filed 2003·Granted Nov 1, 2005·50 cites·21 claims
- 0983US9812436B2SCRs with checker board layoutsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 7, 2017·3 cites·20 claims
- 1083US9147676B2SCRs with checker board layoutsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·5 cites·20 claims
- 1183US7220630B2Method for selectively forming strained etch stop layers to improve FET charge carrier mobilityTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 22, 2007·40 cites·36 claims
- 1281US7545001B2Semiconductor device having high drive current and method of manufacture thereforTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 9, 2009·28 cites·39 claims
- 1368US11764572B2Device and method for electrostatic discharge protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 1458US7883979B2Method for manufacturing a semiconductor device with reduced floating body effectTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 8, 2011·6 cites·13 claims
- 1557US10790274B2SCRs with checker board layoutsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 29, 2020·0 cites·20 claims
- 1651US7453121B2Body contact formation in partially depleted silicon on insulator deviceTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Nov 18, 2008·4 cites·19 claims
- 1744US2005275022A1Depletion-merged FET design in bulk siliconCHENG SHUI-MING·Filed 2005·Application pending·0 cites
- 1843US10290714B2Transistor structure with field plate for reducing area thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 14, 2019·0 cites·20 claims
- 1938US2005145881A1Depletion-merged FET design in bulk siliconFiled 2003·Application pending·0 cites
- 2038US2005186722A1Method and structure for CMOS device with stress relaxed by ion implantation of carbon or oxygen containing ionsFiled 2004·Application pending·0 cites
- 2137US2008061379A1MOS devices with graded spacers and graded source/drain regionsCHEN HAO-YU·Filed 2006·Application pending·0 cites
- 2234US2002179982A1MOS field effect transistor structure and method of manufactureUNITED MICROELECTRONICS CORP·Filed 2001·Application pending·0 cites
- 2333US2002179934A1MOS field effect transistor structure and method of manufactureFiled 2002·Application pending·0 cites
- 2428US2002182826A1Fabrication method for a shallow trench isolation structureFiled 2001·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →