Inventor · disambiguated record
Seiyon Kim
Also filed as: KIM SEIYON
81 granted patents·10 pending applications·605 citations·filing 2006–2025
99Inventor score
Top patents by PatentIndex Score
91 records- 0198US9583491B2CMOS nanowire structureKIM SEIYON·Filed 2015·Granted Feb 28, 2017·28 cites·15 claims
- 0298US9343559B2Nanowire transistor devices and forming techniquesINTEL CORP·Filed 2015·Granted May 17, 2016·25 cites·20 claims
- 0398US9224810B2CMOS nanowire structureKIM SEIYON·Filed 2011·Granted Dec 29, 2015·44 cites·23 claims
- 0498US9129829B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2014·Granted Sep 8, 2015·62 cites·13 claims
- 0598US8753942B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2010·Granted Jun 17, 2014·144 cites·30 claims
- 0697US9859368B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2016·Granted Jan 2, 2018·11 cites·15 claims
- 0797US9484447B2Integration methods to fabricate internal spacers for nanowire devicesKIM SEIYON·Filed 2012·Granted Nov 1, 2016·35 cites·9 claims
- 0897US9012284B2Nanowire transistor devices and forming techniquesGLASS GLENN A·Filed 2012·Granted Apr 21, 2015·37 cites·28 claims
- 0996US11139400B2Non-planar semiconductor device having hybrid geometry-based active regionGOOGLE LLC·Filed 2020·Granted Oct 5, 2021·4 cites·20 claims
- 1096US10304946B2Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devicesINTEL CORP·Filed 2015·Granted May 28, 2019·11 cites·21 claims
- 1196US9812524B2Nanowire transistor devices and forming techniquesINTEL CORP·Filed 2016·Granted Nov 7, 2017·13 cites·20 claims
- 1296US9064944B2Nanowire transistor with underlayer etch stopsKIM SEIYON·Filed 2013·Granted Jun 23, 2015·27 cites·14 claims
- 1395US9224808B2Uniaxially strained nanowire structureCEA STEPHEN M·Filed 2011·Granted Dec 29, 2015·17 cites·43 claims
- 1494US9608059B2Semiconductor device with isolated body portionCAPPELLANI ANNALISA·Filed 2011·Granted Mar 28, 2017·18 cites·28 claims
- 1593US10074573B2CMOS nanowire structureINTEL CORP·Filed 2017·Granted Sep 11, 2018·8 cites·18 claims
- 1693US9595581B2Silicon and silicon germanium nanowire structuresINTEL CORP·Filed 2015·Granted Mar 14, 2017·7 cites·19 claims
- 1793US9564522B2Nanowire structures having non-discrete source and drain regionsCEA STEPHEN M·Filed 2015·Granted Feb 7, 2017·6 cites·9 claims
- 1893US9087863B2Nanowire structures having non-discrete source and drain regionsCEA STEPHEN M·Filed 2011·Granted Jul 21, 2015·10 cites·17 claims
- 1992US10026829B2Semiconductor device with isolated body portionINTEL CORP·Filed 2017·Granted Jul 17, 2018·8 cites·25 claims
- 2092US7560358B1Method of preparing active silicon regions for CMOS or other devicesINTEL CORP·Filed 2007·Granted Jul 14, 2009·23 cites·15 claims
- 2191US2025331249A1Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2025·Application pending·0 cites
- 2289US12513958B2Nanowire transistor fabrication with hardmask layersSONY GROUP CORP·Filed 2024·Granted Dec 30, 2025·0 cites·13 claims
- 2389US12363967B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2023·Granted Jul 15, 2025·0 cites·8 claims
- 2489US2025185316A1Silicon and silicon germanium nanowire structuresSONY GROUP CORP·Filed 2024·Application pending·0 cites
- 2588US9508796B2Internal spacers for nanowire transistors and method of fabrication thereofINTEL CORP·Filed 2013·Granted Nov 29, 2016·9 cites·18 claims
- 2687US9893167B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2014·Granted Feb 13, 2018·9 cites·30 claims
- 2786US9905650B2Uniaxially strained nanowire structureINTEL CORP·Filed 2016·Granted Feb 27, 2018·3 cites·20 claims
- 2885US12046637B2Nanowire transistor fabrication with hardmask layersSONY GROUP CORP·Filed 2023·Granted Jul 23, 2024·0 cites·13 claims
- 2985US10424580B2Semiconductor devices having modulated nanowire countsCAPPELLANI ANNALISA·Filed 2011·Granted Sep 24, 2019·6 cites·25 claims
- 3085US9825130B2Leakage reduction structures for nanowire transistorsINTEL CORP·Filed 2013·Granted Nov 21, 2017·5 cites·21 claims
- 3184US10672868B2Methods of forming self aligned spacers for nanowire device structuresINTEL CORP·Filed 2015·Granted Jun 2, 2020·4 cites·21 claims
- 3283US12125916B2Nanowire structures having non-discrete source and drain regionsGOOGLE LLC·Filed 2022·Granted Oct 22, 2024·0 cites·7 claims
- 3383US11171145B2Memory devices based on capacitors with built-in electric fieldINTEL CORP·Filed 2018·Granted Nov 9, 2021·3 cites·25 claims
- 3483US10580860B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2019·Granted Mar 3, 2020·1 cites·21 claims
- 3583US10483385B2Nanowire structures having wrap-around contactsCEA STEPHEN M·Filed 2011·Granted Nov 19, 2019·4 cites·24 claims
- 3682US11869939B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2022·Granted Jan 9, 2024·0 cites·10 claims
- 3782US10121861B2Nanowire transistor fabrication with hardmask layersINTEL CORP·Filed 2013·Granted Nov 6, 2018·3 cites·13 claims
- 3882US9935205B2Internal spacers for nanowire transistors and method of fabrication thereofINTEL CORP·Filed 2016·Granted Apr 3, 2018·3 cites·8 claims
- 3982US2025357209A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2025·Application pending·0 cites
- 4081US10121856B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2017·Granted Nov 6, 2018·1 cites·17 claims
- 4181US9490320B2Uniaxially strained nanowire structureINTEL CORP·Filed 2015·Granted Nov 8, 2016·2 cites·16 claims
- 4280US10249742B2Offstate parasitic leakage reduction for tunneling field effect transistorsINTEL CORP·Filed 2015·Granted Apr 2, 2019·3 cites·22 claims
- 4379US9614060B2Nanowire transistor with underlayer etch stopsINTEL CORP·Filed 2016·Granted Apr 4, 2017·2 cites·12 claims
- 4478US12310044B2Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devicesINTEL CORP·Filed 2022·Granted May 20, 2025·0 cites·19 claims
- 4578US11239361B2Multilayer insulator stack for ferroelectric transistor and capacitorINTEL CORP·Filed 2017·Granted Feb 1, 2022·2 cites·22 claims
- 4676US12412782B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2022·Granted Sep 9, 2025·0 cites·14 claims
- 4776US12142634B2Silicon and silicon germanium nanowire structuresSONY GROUP CORP·Filed 2021·Granted Nov 12, 2024·0 cites·25 claims
- 4876US11302777B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2020·Granted Apr 12, 2022·0 cites·9 claims
- 4976US10573750B2Methods of forming doped source/drain contacts and structures formed therebyINTEL CORP·Filed 2015·Granted Feb 25, 2020·2 cites·21 claims
- 5075US11677003B2Nanowire transistor fabrication with hardmask layersSONY GROUP CORP·Filed 2021·Granted Jun 13, 2023·0 cites·16 claims
Showing the top 50 of 91 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →