Inventor · disambiguated record
John Xia
Also filed as: XIA JOHN · XIA JOHN Y · XIA JOHN YUAN
13 granted patents·1 pending application·243 citations·filing 2000–2022
90Inventor score
Top patents by PatentIndex Score
14 records- 0194US6670046B1Thermal barrier coating system for turbine componentsSIEMENS WESTINGHOUSE POWER·Filed 2000·Granted Dec 30, 2003·96 cites·16 claims
- 0292US6558114B1Gas turbine with baffle reducing hot gas ingress into interstage disc cavitySIEMENS WESTINGHOUSE POWER·Filed 2000·Granted May 6, 2003·84 cites·6 claims
- 0390US10269916B2LDMOS transistors and associated systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2017·Granted Apr 23, 2019·5 cites·18 claims
- 0490US8709899B2Vertical gate LDMOS deviceZUNIGA MARCO A·Filed 2012·Granted Apr 29, 2014·7 cites·31 claims
- 0583US6401460B1Active control system for gas turbine blade tip clearanceSIEMENS WESTINGHOUSE POWER·Filed 2000·Granted Jun 11, 2002·45 cites·30 claims
- 0682US10833164B2LDMOS transistors and associated systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2019·Granted Nov 10, 2020·2 cites·17 claims
- 0780US10229993B2LDMOS transistors including resurf layers and stepped-gates, and associated systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2017·Granted Mar 12, 2019·4 cites·17 claims
- 0869US11557588B2Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layerMAXIM INTEGRATED PRODUCTS·Filed 2021·Granted Jan 17, 2023·0 cites·12 claims
- 0967US11699753B2LDMOS transistors including vertical gates with multiple dielectric sections, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2022·Granted Jul 11, 2023·0 cites·14 claims
- 1059US10964694B2Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layerMAXIM INTEGRATED PRODUCTS·Filed 2019·Granted Mar 30, 2021·0 cites·20 claims
- 1157US10199475B2LDMOS transistors and associated systems and methodsMAXIM INTEGRATED PRODUCTS·Filed 2017·Granted Feb 5, 2019·0 cites·6 claims
- 1257US2020243659A1Transistors with dual gate conductors, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2020·Application pending·0 cites
- 1354US10622452B2Transistors with dual gate conductors, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Apr 14, 2020·0 cites·15 claims
- 1450US11316044B2LDMOS transistors including vertical gates with multiple dielectric sections, and associated methodsMAXIM INTEGRATED PRODUCTS·Filed 2018·Granted Apr 26, 2022·0 cites·3 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →