Inventor · disambiguated record
Albert Augustus Burk, Jr.
Also filed as: BURK ALBERT · BURK ALBERT AUGUSTUS · BURK JR ALBERT A · BURK JR ALBERT AUGUSTUS
14 granted patents·1 pending application·312 citations·filing 1992–2013
93Inventor score
Files withCREE INC7WESTINGHOUSE ELECTRIC CORP2CHENG LIN1NORTHROP GRUMMAN CORP1OLOUGHLIN MICHAEL JOHN1
Top patents by PatentIndex Score
15 records- 0196US8362503B2Thick nitride semiconductor structures with interlayer structuresCREE INC·Filed 2007·Granted Jan 29, 2013·34 cites·44 claims
- 0294US5788777ASusceptor for an epitaxial growth factorFiled 1997·Granted Aug 4, 1998·129 cites·8 claims
- 0391US7825432B2Nitride semiconductor structures with interlayer structuresCREE INC·Filed 2007·Granted Nov 2, 2010·16 cites·32 claims
- 0491US6849874B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2001·Granted Feb 1, 2005·30 cites·42 claims
- 0590US7427326B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2006·Granted Sep 23, 2008·7 cites·20 claims
- 0679US9054017B2Thick nitride semiconductor structures with interlayer structures and methods of fabricating thick nitride semiconductor structuresCREE INC·Filed 2013·Granted Jun 9, 2015·3 cites·10 claims
- 0776US8324005B2Methods of fabricating nitride semiconductor structures with interlayer structuresSAXLER ADAM WILLIAM·Filed 2010·Granted Dec 4, 2012·3 cites·25 claims
- 0874US8536582B2Stable power devices on low-angle off-cut silicon carbide crystalsZHANG QINGCHUN·Filed 2009·Granted Sep 17, 2013·4 cites·11 claims
- 0974US5351163AHigh Q monolithic MIM capacitorWESTINGHOUSE ELECTRIC CORP·Filed 1992·Granted Sep 27, 1994·39 cites·9 claims
- 1067US9349797B2SiC devices with high blocking voltage terminated by a negative bevelCHENG LIN·Filed 2012·Granted May 24, 2016·2 cites·31 claims
- 1164US5954881ACeiling arrangement for an epitaxial growth reactorNORTHROP GRUMMAN CORP·Filed 1997·Granted Sep 21, 1999·33 cites·12 claims
- 1250US7880171B2Minimizing degradation of SiC bipolar semiconductor devicesCREE INC·Filed 2004·Granted Feb 1, 2011·0 cites·27 claims
- 1341US2014054609A1Large high-quality epitaxial wafersCREE INC·Filed 2013·Application pending·0 cites
- 1440US10541306B2Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor deviceOLOUGHLIN MICHAEL JOHN·Filed 2012·Granted Jan 21, 2020·0 cites·31 claims
- 1540US5501173AMethod for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substratesWESTINGHOUSE ELECTRIC CORP·Filed 1993·Granted Mar 26, 1996·12 cites·5 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →