Inventor · disambiguated record
Simone Raoux
Also filed as: RAOUX SIMONE
26 granted patents·6 pending applications·708 citations·filing 2004–2015
97Inventor score
Top patents by PatentIndex Score
32 records- 0197US7494841B2Solution-based deposition process for metal chalcogenidesIBM·Filed 2006·Granted Feb 24, 2009·78 cites·20 claims
- 0296US6936840B2Phase-change memory cell and method of fabricating the phase-change memory cellIBM·Filed 2004·Granted Aug 30, 2005·290 cites·15 claims
- 0395US8946666B2Ge-Rich GST-212 phase change memory materialsCHENG HUAI-YU·Filed 2011·Granted Feb 3, 2015·16 cites·12 claims
- 0495US7501648B2Phase change materials and associated memory devicesIBM·Filed 2006·Granted Mar 10, 2009·23 cites·35 claims
- 0595US7488967B2Structure for confining the switching current in phase memory (PCM) cellsIBM·Filed 2005·Granted Feb 10, 2009·40 cites·6 claims
- 0695US7221579B2Method and structure for high performance phase change memoryIBM·Filed 2005·Granted May 22, 2007·67 cites·20 claims
- 0794US7932507B2Current constricting phase change memory element structureIBM·Filed 2010·Granted Apr 26, 2011·14 cites·14 claims
- 0892US8363463B2Phase change memory having one or more non-constant doping profilesMACRONIX INT CO LTD·Filed 2010·Granted Jan 29, 2013·16 cites·10 claims
- 0992US8178387B2Methods for reducing recrystallization time for a phase change materialCHENG HUAI-YU·Filed 2010·Granted May 15, 2012·17 cites·9 claims
- 1090US8426242B2Composite target sputtering for forming doped phase change materialsCHENG HUAI-YU·Filed 2011·Granted Apr 23, 2013·11 cites·20 claims
- 1190US7009694B2Indirect switching and sensing of phase change memory cellsIBM·Filed 2004·Granted Mar 7, 2006·40 cites·57 claims
- 1289US8772747B2Composite target sputtering for forming doped phase change materialsMACRONIX INT CO LTD·Filed 2013·Granted Jul 8, 2014·8 cites·10 claims
- 1388US7875873B2Phase change materials and associated memory devicesIBM·Filed 2008·Granted Jan 25, 2011·6 cites·20 claims
- 1487US8324605B2Dielectric mesh isolated phase change structure for phase change memoryLUNG HSIANG-LAN·Filed 2008·Granted Dec 4, 2012·16 cites·21 claims
- 1587US7745807B2Current constricting phase change memory element structureIBM·Filed 2007·Granted Jun 29, 2010·11 cites·20 claims
- 1686US7491573B1Phase change materials for applications that require fast switching and high enduranceIBM·Filed 2008·Granted Feb 17, 2009·12 cites·1 claims
- 1785US9257643B2Phase change memory cell with improved phase change materialIBM·Filed 2013·Granted Feb 9, 2016·4 cites·15 claims
- 1882US8029716B2Amorphous nitride release layers for imprint lithography, and method of useIBM·Filed 2008·Granted Oct 4, 2011·6 cites·24 claims
- 1981US8828785B2Single-crystal phase change material on insulator for reduced cell variabilityCOHEN GUY·Filed 2012·Granted Sep 9, 2014·2 cites·15 claims
- 2076US7459266B2Phase-change memory cell and method of fabricating the phase-change memory cellIBM·Filed 2005·Granted Dec 2, 2008·7 cites·1 claims
- 2171US8233317B2Phase change memory device suitable for high temperature operationBREITWISCH MATTHEW J·Filed 2009·Granted Jul 31, 2012·7 cites·19 claims
- 2269US9653683B2Phase change memory cell with improved phase change materialIBM·Filed 2015·Granted May 16, 2017·1 cites·11 claims
- 2369US7833825B2Solution-based deposition process for metal chalcogenidesIBM·Filed 2009·Granted Nov 16, 2010·3 cites·18 claims
- 2468US7910910B2Phase-change memory cell and method of fabricating the phase-change memory cellIBM·Filed 2008·Granted Mar 22, 2011·3 cites·20 claims
- 2564US8378328B2Phase change memory random access device using single-element phase change materialIBM·Filed 2008·Granted Feb 19, 2013·5 cites·16 claims
- 2661US2014070155A1Single-Crystal Phase Change Material on Insulator for Reduced Cell VariabilityCOHEN GUY·Filed 2012·Application pending·0 cites
- 2756US8114331B2Amorphous oxide release layers for imprint lithography, and method of useHOULE FRANCES A·Filed 2008·Granted Feb 14, 2012·5 cites·23 claims
- 2854US2009230377A1Phase Change Materials for Applications that Require Fast Switching and High EnduranceIBM·Filed 2009·Application pending·0 cites
- 2948US2014151771A1Thin film deposition and logic deviceIBM·Filed 2013·Application pending·0 cites
- 3047US2014151770A1Thin film deposition and logic deviceIBM·Filed 2012·Application pending·0 cites
- 3145US2008124833A1Method for filling holes with metal chalcogenide materialIBM·Filed 2006·Application pending·0 cites
- 3233US2008165569A1Resistance Limited Phase Change Memory MaterialCHEN CHIEH-FANG·Filed 2007·Application pending·0 cites
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