Inventor · disambiguated record
Simon S. Chan
Also filed as: CHAN SIMON · CHAN SIMON S · CHAN SIMON SIU-SING
92 granted patents·16 pending applications·1,852 citations·filing 1988–2020
99Inventor score
Files withADVANCED MICRO DEVICES INC58SPANSION LLC16CYPRESS SEMICONDUCTOR CORP10AVANTEK4CHAN SIMON S3
Top patents by PatentIndex Score
108 records- 0194US7456062B1Method of forming a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 25, 2008·25 cites·21 claims
- 0294US4978639AMethod for the simultaneous formation of via-holes and wraparound plating on semiconductor chipsAVANTEK·Filed 1989·Granted Dec 18, 1990·177 cites·8 claims
- 0394US4842699AMethod of selective via-hole and heat sink plating using a metal maskAVANTEK·Filed 1988·Granted Jun 27, 1989·145 cites·12 claims
- 0492US4808273AMethod of forming completely metallized via holes in semiconductorsAVANTEK·Filed 1988·Granted Feb 28, 1989·117 cites·17 claims
- 0591US6967160B1Method of manufacturing semiconductor device having nickel silicide with reduced interface roughnessADVANCED MICRO DEVICES INC·Filed 2005·Granted Nov 22, 2005·18 cites·14 claims
- 0691US6642119B1Silicide MOSFET architecture and method of manufactureADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 4, 2003·61 cites·16 claims
- 0790US8866213B2Non-Volatile memory with silicided bit line contactsSPANSION LLC·Filed 2013·Granted Oct 21, 2014·6 cites·15 claims
- 0890US7879718B2Local interconnect having increased misalignment toleranceSPANSION LLC·Filed 2006·Granted Feb 1, 2011·13 cites·20 claims
- 0990US6124203AMethod for forming conformal barrier layersADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 26, 2000·107 cites·20 claims
- 1088US6867130B1Enhanced silicidation of polysilicon gate electrodesADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 15, 2005·45 cites·6 claims
- 1188US6472317B1Dual damascene arrangement for metal interconnection with low k dielectric constant materials in dielectric layersADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 29, 2002·43 cites·13 claims
- 1288US5670828ATunneling technology for reducing intra-conductive layer capacitanceADVANCED MICRO DEVICES INC·Filed 1995·Granted Sep 23, 1997·80 cites·21 claims
- 1387US8652907B2Integrating transistors with different poly-silicon heights on the same dieLIN CHUAN·Filed 2011·Granted Feb 18, 2014·9 cites·15 claims
- 1487US6043153AMethod for reducing electromigration in a copper interconnectADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 28, 2000·77 cites·8 claims
- 1586US9252154B2Non-volatile memory with silicided bit line contactsSPANSION LLC·Filed 2014·Granted Feb 2, 2016·4 cites·20 claims
- 1686US9161461B2Multilayer electronic structure with stepped holesHURWITZ DROR·Filed 2012·Granted Oct 13, 2015·9 cites·27 claims
- 1786US6143672AMethod of reducing metal voidings in 0.25 μm AL interconnectADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 7, 2000·65 cites·17 claims
- 1885US6312874B1Method for forming a dual damascene trench and underlying borderless via in low dielectric constant materialsADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 6, 2001·71 cites·7 claims
- 1983US6518173B1Method for avoiding fluorine contamination of copper interconnectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 11, 2003·35 cites·7 claims
- 2083US6259115B1Dummy patterning for semiconductor manufacturing processesADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 10, 2001·69 cites·10 claims
- 2181US6624476B1Semiconductor-on-insulator (SOI) substrate having selective dopant implant in insulator layer and method of fabricatingADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 23, 2003·28 cites·33 claims
- 2281US6060380AAntireflective siliconoxynitride hardmask layer used during etching processes in integrated circuit fabricationADVANCED MICRO DEVICES INC·Filed 1998·Granted May 9, 2000·67 cites·8 claims
- 2379US9831114B1Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Nov 28, 2017·2 cites·18 claims
- 2479US8598005B2Method and manufacture for embedded flash to achieve high quality spacers for core and high voltage devices and low temperature spacers for high performance logic devicesCHAN SIMON SIU-SING·Filed 2011·Granted Dec 3, 2013·6 cites·20 claims
- 2578US6670259B1Inert atom implantation method for SOI getteringADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 30, 2003·25 cites·20 claims
- 2677US9437470B2Self-aligned trench isolation in integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Sep 6, 2016·3 cites·14 claims
- 2776US6689688B2Method and device using silicide contacts for semiconductor processingADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 10, 2004·21 cites·26 claims
- 2875US8735960B2High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performanceTRAN MINH Q·Filed 2008·Granted May 27, 2014·8 cites·16 claims
- 2975US8102009B2Integrated circuit eliminating source/drain junction spikingCHAN SIMON SIU-SING·Filed 2006·Granted Jan 24, 2012·4 cites·10 claims
- 3075US6964875B1Array of gate dielectric structures to measure gate dielectric thickness and parasitic capacitanceADVANCED MICRO DEVICES INC·Filed 2004·Granted Nov 15, 2005·15 cites·10 claims
- 3174US11183509B2Non-volatile memory with silicided bit line contactsInfineon Technologies LLC·Filed 2020·Granted Nov 23, 2021·0 cites·10 claims
- 3274US7498222B1Enhanced etching of a high dielectric constant layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 3, 2009·6 cites·15 claims
- 3374US7223640B2Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2005·Granted May 29, 2007·6 cites·13 claims
- 3472US6156643AMethod of forming a dual damascene trench and borderless via structureADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 5, 2000·41 cites·21 claims
- 3571US7843015B2Multi-silicide system in integrated circuit technologyGLOBALFOUNDRIES INC·Filed 2005·Granted Nov 30, 2010·4 cites·6 claims
- 3671US5288660AMethod for forming self-aligned t-shaped transistor electrodeAVANTEK·Filed 1993·Granted Feb 22, 1994·50 cites·17 claims
- 3770US8114736B2Integrated circuit system with memory systemCHAN SIMON SIU-SING·Filed 2007·Granted Feb 14, 2012·3 cites·20 claims
- 3870US7465644B1Isolation region bird's beak suppressionADVANCED MICRO DEVICES INC·Filed 2005·Granted Dec 16, 2008·5 cites·24 claims
- 3970US6743666B1Selective thickening of the source-drain and gate areas of field effect transistorsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 1, 2004·15 cites·28 claims
- 4067US6873051B1Nickel silicide with reduced interface roughnessADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 29, 2005·11 cites·5 claims
- 4166US6368949B1Post-spacer etch surface treatment for improved silicide formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 9, 2002·13 cites·19 claims
- 4265US8283249B2Local interconnect having increased misalignment toleranceCHAN SIMON S·Filed 2010·Granted Oct 9, 2012·1 cites·20 claims
- 4365US6737337B1Method of preventing dopant depletion in surface semiconductor layer of semiconductor-on-insulator (SOI) deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted May 18, 2004·12 cites·20 claims
- 4465US6417571B1Single grain copper interconnect with bamboo structure in a trenchADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 9, 2002·11 cites·5 claims
- 4564US7064067B1Reduction of lateral silicide growth in integrated circuit technologyADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 20, 2006·11 cites·20 claims
- 4664US7015076B1Selectable open circuit and anti-fuse element, and fabrication method thereforADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 21, 2006·10 cites·10 claims
- 4763US6258683B1Local interconnection arrangement with reduced junction leakage and method of forming sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 10, 2001·11 cites·6 claims
- 4862US10692877B2Non-volatile memory with silicided bit line contactsCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Jun 23, 2020·0 cites·5 claims
- 4962US7446369B2SONOS memory cell having high-K dielectricSPANSION LLC·Filed 2005·Granted Nov 4, 2008·2 cites·10 claims
- 5062US6093635AHigh integrity borderless vias with HSQ gap filled patterned conductive layersADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 25, 2000·27 cites·29 claims
Showing the top 50 of 108 patent records by PatentIndex Score.
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