Inventor · disambiguated record
Huai-Jen Tung
Also filed as: TUNG HUAI-JEN
23 granted patents·10 pending applications·19 citations·filing 2018–2025
92Inventor score
Top patents by PatentIndex Score
33 records- 0196US11888074B2Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0295US11901390B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0393US10283548B1CMOS sensors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·9 cites·20 claims
- 0493US2025366072A1Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0589US11532658B2Image sensor grid and method of fabrication of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 0689US2025126848A1Flash Memory Device with Three Dimensional Half Flash Structure and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0787US12402362B2Flash memory device with three-dimensional half structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 0887US11658248B2Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·1 cites·20 claims
- 0985US2025126920A1Image sensor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1084US12218253B2Flash memory device with three dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1184US2025098227A1Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1283US12364049B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1382US2025311466A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1481US11183572B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·1 cites·20 claims
- 1580US12261188B2Image sensor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 1680US12199159B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 1780US2024047496A1Image sensor grid and method of fabrication of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1878US10879289B1Method for forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 1977US12191338B2Image sensor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 2076US2023120006A1Image sensor grid and method of fabrication of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2174US2022359598A1Image sensor grid and method of fabrication of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2273US11728399B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 2372US2024395642A1Test structure for void and topography monitoring in a flash memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2470US11652133B2Image sensor grid and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 2570US11652127B2Image sensor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·0 cites·20 claims
- 2668US2022367559A1Method for forming image sensor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2766US11069740B2Image sensor grid and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 2864US11903193B2Two dimensional structure to control flash operation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2962US12444660B2Test structure for void and topography monitoring in a flash memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 14, 2025·0 cites·20 claims
- 3059US11502123B2Methods for forming image sensor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 3158US11177308B2CMOS sensors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 3257US11792981B2Two dimensional structure to control flash operation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·0 cites·20 claims
- 3344US11164903B2Image sensor with pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →