Inventor · disambiguated record
Yu-Hsiang Hung
Also filed as: HUNG YU-HSIANG
80 granted patents·17 pending applications·295 citations·filing 2005–2025
99Inventor score
Files withUNITED MICROELECTRONICS CORP86CHANG CHUNG-FU2INSTITUTE OF NUCLEAR ENERGY RES ATOMIC ENERGY COUNCIL EXECUTIVE YUAN2UNIV YUAN ZE2HUANG SHIN-CHUAN1
Top patents by PatentIndex Score
97 records- 0198US9735047B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 15, 2017·30 cites·10 claims
- 0298US9349833B1Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 24, 2016·32 cites·11 claims
- 0397US9123659B1Method for manufacturing finFET deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Sep 1, 2015·30 cites·12 claims
- 0496US9379119B1Static random access memoryUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 28, 2016·15 cites·18 claims
- 0595US9287263B1Semiconductor device having a metal gateUNITED MICROELECTRONICS CORP·Filed 2014·Granted Mar 15, 2016·17 cites·10 claims
- 0695US9166024B2FinFET structure with cavities and semiconductor compound portions extending laterally over sidewall spacersUNITED MICROELECTRONICS CORP·Filed 2013·Granted Oct 20, 2015·23 cites·2 claims
- 0794US9905464B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 27, 2018·9 cites·5 claims
- 0892US10395991B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 27, 2019·7 cites·20 claims
- 0992US9589966B2Static random access memoryUNITED MICROELECTRONICS CORP·Filed 2015·Granted Mar 7, 2017·9 cites·17 claims
- 1092US8895396B1Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structuresUNITED MICROELECTRONICS CORP·Filed 2013·Granted Nov 25, 2014·14 cites·18 claims
- 1189US9793380B2Semiconductor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Oct 17, 2017·5 cites·10 claims
- 1288US12328922B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted Jun 10, 2025·0 cites·9 claims
- 1388US10546922B2Method for fabricating cap layer on an epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jan 28, 2020·4 cites·13 claims
- 1488US9916978B2Method for fabricating a Fin field effect transistor (FinFET)UNITED MICROELECTRONICS CORP·Filed 2016·Granted Mar 13, 2018·5 cites·21 claims
- 1587US10978457B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 13, 2021·4 cites·9 claims
- 1687US10008569B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 26, 2018·3 cites·9 claims
- 1787US8993384B2Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Mar 31, 2015·7 cites·9 claims
- 1886US9786510B2Fin-shaped structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Oct 10, 2017·5 cites·6 claims
- 1986US9685385B1Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 20, 2017·4 cites·18 claims
- 2086US9502530B2Method of manufacturing semiconductor devicesUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·4 cites·6 claims
- 2186US8981487B2Fin-shaped field-effect transistor (FinFET)UNITED MICROELECTRONICS CORP·Filed 2013·Granted Mar 17, 2015·7 cites·8 claims
- 2286US2025275202A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2384US9847398B1Semiconductor device with gate structure having dielectric layer on one side and contact plug on the other sideUNITED MICROELECTRONICS CORP·Filed 2016·Granted Dec 19, 2017·4 cites·9 claims
- 2483US9947792B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Apr 17, 2018·3 cites·2 claims
- 2583US2025120161A1Semiconductor device including gate oxide layerUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2682US12342599B2Manufacturing method of semiconductor device including gate oxide layerUNITED MICROELECTRONICS CORP·Filed 2024·Granted Jun 24, 2025·0 cites·9 claims
- 2782US10566285B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Feb 18, 2020·3 cites·9 claims
- 2881US9773887B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 26, 2017·3 cites·16 claims
- 2981US9601600B2Processes for fabricating FinFET structures with semiconductor compound portions formed in cavities and extending over sidewall spacersUNITED MICROELECTRONICS CORP·Filed 2015·Granted Mar 21, 2017·3 cites·10 claims
- 3080US8772120B2Semiconductor processCHANG CHUNG-FU·Filed 2012·Granted Jul 8, 2014·5 cites·19 claims
- 3179US9659873B2Semiconductor structure with aligning mark and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 23, 2017·2 cites·10 claims
- 3278US10795255B2Method of forming layout definition of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 6, 2020·2 cites·14 claims
- 3378US9786662B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 10, 2017·2 cites·19 claims
- 3477US12211915B2Semiconductor device including gate oxide layerUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jan 28, 2025·0 cites·10 claims
- 3577US11948975B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Apr 2, 2024·0 cites·9 claims
- 3677US9224864B1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 29, 2015·4 cites·19 claims
- 3776US12057483B2Semiconductor device including gate oxide layer and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 6, 2024·0 cites·6 claims
- 3876US8753902B1Method of controlling etching process for forming epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 17, 2014·3 cites·13 claims
- 3974US9136348B2Semiconductor structure and fabrication method thereofWEI MING-TE·Filed 2012·Granted Sep 15, 2015·3 cites·13 claims
- 4073US10050146B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Aug 14, 2018·2 cites·5 claims
- 4173US9960123B2Method of forming semiconductor structure with aligning mark in dicing regionUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 1, 2018·1 cites·10 claims
- 4273US9362382B1Method for forming semiconductor device with low sealing lossUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jun 7, 2016·2 cites·15 claims
- 4372US9524987B2Fin-shaped structure and method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 20, 2016·2 cites·9 claims
- 4470US11626500B2Semiconductor device including gate oxide layer and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Apr 11, 2023·0 cites·9 claims
- 4569US11189695B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 30, 2021·0 cites·9 claims
- 4669US9929234B2Semiconductor device having a cap layer with V-shapeUNITED MICROELECTRONICS CORP·Filed 2016·Granted Mar 27, 2018·1 cites·8 claims
- 4769US9691665B2Semiconductor structure with self-aligned spacers and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 27, 2017·1 cites·8 claims
- 4868US9443954B2Method for manufacturing semiconductor device having metal gateUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 13, 2016·1 cites·10 claims
- 4968US8829575B2Semiconductor structure and process thereofUNITED MICROELECTRONICS CORP·Filed 2012·Granted Sep 9, 2014·2 cites·20 claims
- 5066US11737257B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Aug 22, 2023·0 cites·9 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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