Inventor · disambiguated record
Manfred Schiekofer
Also filed as: SCHIEKOFER MANFRED
9 granted patents·4 pending applications·106 citations·filing 2001–2011
83Inventor score
Top patents by PatentIndex Score
13 records- 0196US8247300B2Control of dopant diffusion from buried layers in bipolar integrated circuitsBABCOCK JEFFREY A·Filed 2009·Granted Aug 21, 2012·97 cites·4 claims
- 0260US8932942B2Method of forming an electrical contact between a support wafer and the surface of a top silicon layer of a silicon-on-insulator wafer and an electrical device including such an electrical contactSTEINMANN PHILIPP·Filed 2010·Granted Jan 13, 2015·1 cites·10 claims
- 0357US7217322B2Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layerTEXAS INSTRUMENTS INC·Filed 2004·Granted May 15, 2007·5 cites·15 claims
- 0453US9090991B2Controlling an epitaxial growth process in an epitaxial reactorSCHIEKOFER MANFRED·Filed 2011·Granted Jul 28, 2015·0 cites·3 claims
- 0550US8940093B2Method of controlling an epitaxial growth process in an epitaxial reactorSCHIEKOFER MANFRED·Filed 2008·Granted Jan 27, 2015·0 cites·4 claims
- 0648US7772057B2Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protectionTEXAS INSTRUMENTS INC·Filed 2006·Granted Aug 10, 2010·0 cites·11 claims
- 0746US8294218B2Method of fabricating an integrated circuit with gate self-protection, and an integrated circuit with gate self-protectionEL-KAREH BADIH·Filed 2010·Granted Oct 23, 2012·0 cites·10 claims
- 0845US8330223B2Bipolar transistorSCHIMPF KLAUS·Filed 2010·Granted Dec 11, 2012·1 cites·8 claims
- 0944US7144789B2Method of fabricating complementary bipolar transistors with SiGe base regionsTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 5, 2006·2 cites·12 claims
- 1042US2005250289A1Control of dopant diffusion from buried layers in bipolar integrated circuitsBABCOCK JEFFREY A·Filed 2005·Application pending·0 cites
- 1136US2005118771A1Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistorFiled 2004·Application pending·0 cites
- 1233US2002038689A1Reduced and atmospheric pressure process capable epitaxial chamberFiled 2001·Application pending·0 cites
- 1332US2003082882A1Control of dopant diffusion from buried layers in bipolar integrated circuitsFiled 2002·Application pending·0 cites
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