Inventor · disambiguated record
Kiyohiro Matsushita
Also filed as: MATSUSHITA KIYOHIRO
14 granted patents·6 pending applications·5,651 citations·filing 2003–2014
96Inventor score
Top patents by PatentIndex Score
20 records- 0199US7807566B2Method for forming dielectric SiOCH film having chemical stabilityASM JAPAN·Filed 2007·Granted Oct 5, 2010·464 cites·17 claims
- 0298US9478414B2Method for hydrophobization of surface of silicon-containing film by ALDASM IP HOLDING BV·Filed 2014·Granted Oct 25, 2016·465 cites·6 claims
- 0398US9136108B2Method for restoring porous surface of dielectric layer by UV light-assisted ALDASM IP HOLDING BV·Filed 2013·Granted Sep 15, 2015·518 cites·20 claims
- 0498US8785215B2Method for repairing damage of dielectric film by cyclic processesASM IP HOLDING BV·Filed 2013·Granted Jul 22, 2014·521 cites·26 claims
- 0598US7789965B2Method of cleaning UV irradiation chamberASM JAPAN·Filed 2007·Granted Sep 7, 2010·527 cites·7 claims
- 0698US7763869B2UV light irradiating apparatus with liquid filterASM JAPAN·Filed 2007·Granted Jul 27, 2010·507 cites·14 claims
- 0798US7501292B2Method for managing UV irradiation for curing semiconductor substrateASM JAPAN·Filed 2007·Granted Mar 10, 2009·525 cites·17 claims
- 0897US9190263B2Method for forming SiOCH film using organoaminosilane annealingASM IP HOLDING BV·Filed 2013·Granted Nov 17, 2015·518 cites·15 claims
- 0997US9029272B1Method for treating SiOCH film with hydrogen plasmaASM IP HOLDING BV·Filed 2013·Granted May 12, 2015·526 cites·17 claims
- 1097US8664627B1Method for supplying gas with flow rate gradient over substrateISHIKAWA DAI·Filed 2012·Granted Mar 4, 2014·518 cites·20 claims
- 1196US8241991B2Method for forming interconnect structure having airgapHSIEH JULIAN J·Filed 2010·Granted Aug 14, 2012·522 cites·13 claims
- 1286US6818570B2Method of forming silicon-containing insulation film having low dielectric constant and high mechanical strengthASM JAPAN·Filed 2003·Granted Nov 16, 2004·35 cites·49 claims
- 1363US7354852B2Method of forming interconnection in semiconductor deviceASM JAPAN·Filed 2005·Granted Apr 8, 2008·4 cites·19 claims
- 1457US7718544B2Method of forming silicon-containing insulation film having low dielectric constant and low diffusion coefficientASM JAPAN·Filed 2006·Granted May 18, 2010·1 cites·20 claims
- 1546US2010151151A1Method of forming low-k film having chemical resistanceASM JAPAN·Filed 2008·Application pending·0 cites
- 1645US2009093134A1Semiconductor manufacturing apparatus and method for curing materials with uv lightASM JAPAN·Filed 2007·Application pending·0 cites
- 1745US2009093135A1Semiconductor manufacturing apparatus and method for curing material with uv lightASM JAPAN·Filed 2007·Application pending·0 cites
- 1845US2008220619A1Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiationASM JAPAN·Filed 2007·Application pending·0 cites
- 1939US2013068970A1UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process StationsMATSUSHITA KIYOHIRO·Filed 2011·Application pending·0 cites
- 2036US2011159202A1Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVDASM JAPAN·Filed 2010·Application pending·0 cites
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