Inventor · disambiguated record
Seiichi Mori
Also filed as: MORI SEIICHI
90 granted patents·12 pending applications·2,172 citations·filing 1978–2016
99Inventor score
Files withTOSHIBA KK84ASAHI OPTICAL CO LTD5KANEGAFUCHI CHEMICAL IND2MATSUI MICHIHARU2TOKYO SHIBAURA ELECTRIC CO2
Top patents by PatentIndex Score
102 records- 0197US7498630B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted Mar 3, 2009·52 cites·20 claims
- 0297US6845042B2Nonvolatile semiconductor memory, fabrication method for the same, semiconductor integrated circuits and systemsTOSHIBA KK·Filed 2003·Granted Jan 18, 2005·149 cites·71 claims
- 0397US6713834B2Semiconductor device having two-layered charge storage electrodeTOSHIBA KK·Filed 2001·Granted Mar 30, 2004·117 cites·27 claims
- 0496US4990463AMethod of manufacturing capacitorTOSHIBA KK·Filed 1989·Granted Feb 5, 1991·153 cites·13 claims
- 0595US6794708B2Nonvolatile semiconductor device with floating gate structureTOSHIBA KK·Filed 2001·Granted Sep 21, 2004·67 cites·9 claims
- 0694US7049653B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2005·Granted May 23, 2006·18 cites·4 claims
- 0792US7118963B2Semiconductor memory integrated circuit and its manufacturing methodTOSHIBA KK·Filed 2005·Granted Oct 10, 2006·16 cites·3 claims
- 0892US6835978B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2001·Granted Dec 28, 2004·43 cites·9 claims
- 0992US4262041AProcess for preparing a composite amphoteric ion exchange membraneKANEGAFUCHI CHEMICAL IND·Filed 1978·Granted Apr 14, 1981·63 cites·14 claims
- 1091US6661052B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Dec 9, 2003·34 cites·9 claims
- 1191US5304829ANonvolatile semiconductor deviceTOSHIBA KK·Filed 1991·Granted Apr 19, 1994·89 cites·25 claims
- 1290US5694357ANonvolatile semiconductor memory device for storing multi-value dataTOSHIBA KK·Filed 1996·Granted Dec 2, 1997·83 cites·33 claims
- 1389US7939406B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2009·Granted May 10, 2011·9 cites·19 claims
- 1489US7420259B2Semiconductor device having two-layered charge storage electrodeTOSHIBA KK·Filed 2006·Granted Sep 2, 2008·13 cites·17 claims
- 1589US6798038B2Manufacturing method of semiconductor device with filling insulating film into trenchTOSHIBA KK·Filed 2002·Granted Sep 28, 2004·43 cites·1 claims
- 1689US6222773B1Nonvolatile semiconductor memory in which the number of programming or erasing bits increases with the progress of programming or erasingTOSHIBA KK·Filed 2000·Granted Apr 24, 2001·48 cites·6 claims
- 1788US7573092B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted Aug 11, 2009·9 cites·15 claims
- 1888US6806132B2Semiconductor device having two-layered charge storage electrodeTOSHIBA KK·Filed 2003·Granted Oct 19, 2004·35 cites·4 claims
- 1986US5051794ANon-volatile semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 1989·Granted Sep 24, 1991·49 cites·7 claims
- 2086US5036383ASemiconductor device having an improved bonding padTOSHIBA KK·Filed 1990·Granted Jul 30, 1991·83 cites·11 claims
- 2185US7557401B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jul 7, 2009·14 cites·14 claims
- 2285US7382016B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Jun 3, 2008·7 cites·6 claims
- 2385US6998673B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Feb 14, 2006·7 cites·10 claims
- 2485USD319228SBarcode readerASAHI OPTICAL CO LTD·Filed 1990·Granted Aug 20, 1991·26 cites·1 claims
- 2583US7352027B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2007·Granted Apr 1, 2008·6 cites·21 claims
- 2683US5736442AMethod of manufacturing a semiconductor memory deviceTOSHIBA KK·Filed 1996·Granted Apr 7, 1998·46 cites·14 claims
- 2783US5657271ANonvolatile semiconductor memory device in which band to band tunneling current is suppressedTOSHIBA KK·Filed 1996·Granted Aug 12, 1997·53 cites·12 claims
- 2882US7449745B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2007·Granted Nov 11, 2008·5 cites·9 claims
- 2982US7371654B2Manufacturing method of semiconductor device with filling insulating film into trenchTOSHIBA KK·Filed 2006·Granted May 13, 2008·8 cites·8 claims
- 3082US6481650B1Method and apparatus for crushing waste tiresMORI MANUFACTORY CO LTD·Filed 2000·Granted Nov 19, 2002·23 cites·6 claims
- 3181US7348627B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted Mar 25, 2008·5 cites·12 claims
- 3281US6900086B2Semiconductor device having MISFETsTOSHIBA KK·Filed 2003·Granted May 31, 2005·25 cites·10 claims
- 3381US4952974ADetecting member for detecting the presence of an exchangeable unit in an image recording apparatusASAHI OPTICAL CO LTD·Filed 1989·Granted Aug 28, 1990·22 cites·8 claims
- 3480US5019527AMethod of manufacturing non-volatile semiconductor memories, in which selective removal of field oxidation film for forming source region and self-adjusted treatment for forming contact portion are simultaneously performedTOSHIBA KK·Filed 1990·Granted May 28, 1991·52 cites·12 claims
- 3578US7141474B2Fabrication method of a nonvolatile semiconductor memoryTOSHIBA KK·Filed 2004·Granted Nov 28, 2006·18 cites·2 claims
- 3676US7061069B2Semiconductor device having two-layered charge storage electrodeTOSHIBA KK·Filed 2004·Granted Jun 13, 2006·16 cites·8 claims
- 3776US6902976B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jun 7, 2005·12 cites·5 claims
- 3876US6376879B2Semiconductor device having MISFETsTOSHIBA KK·Filed 1999·Granted Apr 23, 2002·40 cites·41 claims
- 3975US6452837B2Nonvolatile semiconductor memory and threshold voltage control method thereforTOSHIBA KK·Filed 2000·Granted Sep 17, 2002·22 cites·21 claims
- 4074US4935378AMethod for manufacturing a semiconductor device having more than two conductive layersTOSHIBA KK·Filed 1988·Granted Jun 19, 1990·31 cites·9 claims
- 4173US6989303B2Nonvolatile semiconductor device with floating gate structureTOSHIBA KK·Filed 2004·Granted Jan 24, 2006·12 cites·4 claims
- 4272US6927449B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2004·Granted Aug 9, 2005·9 cites·9 claims
- 4372US4929982ASheet path in an electrophotographic printerIBM·Filed 1989·Granted May 29, 1990·19 cites·9 claims
- 4472US4616402AMethod of manufacturing a semiconductor device with a stacked-gate-electrode structureTOSHIBA KK·Filed 1985·Granted Oct 14, 1986·40 cites·14 claims
- 4571US7479430B2Non-volatile semiconductor memory deviceTOSHIBA KK·Filed 2008·Granted Jan 20, 2009·2 cites·10 claims
- 4671US5025417ASemiconductor memory device capable of preventing data of non-selected memory cell from being degradedTOSHIBA KK·Filed 1989·Granted Jun 18, 1991·26 cites·13 claims
- 4770US5838615ANonvolatile semiconductor memory device having reduced source line resistanceTOKYO SHIBAURA ELECTRIC CO·Filed 1997·Granted Nov 17, 1998·28 cites·36 claims
- 4870US5666311AMethod of making semiconductor device having isolating trenchesTOSHIBA KK·Filed 1995·Granted Sep 9, 1997·24 cites·45 claims
- 4970US5646888ASemiconductor device having isolating regionsTOSHIBA KK·Filed 1994·Granted Jul 8, 1997·23 cites·53 claims
- 5070US5081504ADrum cleaning unit for image recording apparatusASAHI OPTICAL CO LTD·Filed 1989·Granted Jan 14, 1992·16 cites·17 claims
Showing the top 50 of 102 patent records by PatentIndex Score.
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