Inventor · disambiguated record
Kazuhiro Mochizuki
Also filed as: MOCHIZUKI KAZUHIRO
33 granted patents·8 pending applications·221 citations·filing 1990–2020
96Inventor score
Files withHITACHI LTD16RENESAS TECH CORP8MOCHIZUKI KAZUHIRO4AIST2HITACHI POWER SEMICONDUCTOR DEVICE LTD2
Top patents by PatentIndex Score
41 records- 0189US9478605B2Semiconductor device with similar impurity concentration JTE regionsHITACHI POWER SEMICONDUCTOR DEVICE LTD·Filed 2013·Granted Oct 25, 2016·7 cites·6 claims
- 0285US6461927B1Semiconductor device and method of producing the sameHITACHI LTD·Filed 2001·Granted Oct 8, 2002·37 cites·4 claims
- 0381US8710550B2Semiconductor device with hetero-junction bodiesHITACHI LTD·Filed 2012·Granted Apr 29, 2014·6 cites·11 claims
- 0474US5481120ASemiconductor device and its fabrication methodHITACHI LTD·Filed 1993·Granted Jan 2, 1996·36 cites·35 claims
- 0572US8896027B2Nitride semiconductor diodeHITACHI LTD·Filed 2012·Granted Nov 25, 2014·3 cites·10 claims
- 0670US7906796B2Bipolar device and fabrication method thereofHITACHI LTD·Filed 2008·Granted Mar 15, 2011·4 cites·15 claims
- 0769US6403991B1Semiconductor device and method for fabricating the sameHITACHI LTD·Filed 2000·Granted Jun 11, 2002·11 cites·13 claims
- 0868US10186575B2Silicon carbide semiconductor device and a method of manufacturing a silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Jan 22, 2019·1 cites·6 claims
- 0965US7547929B2Semiconductor HBT MMIC device and semiconductor moduleRENESAS TECH CORP·Filed 2005·Granted Jun 16, 2009·3 cites·3 claims
- 1065US6743691B2Semiconductor device and method for fabricating the sameRENESAS TECH CORP·Filed 2001·Granted Jun 1, 2004·8 cites·8 claims
- 1165US6696711B2Semiconductor device and power amplifier using the sameRENESAS TECH CORP·Filed 2002·Granted Feb 24, 2004·10 cites·9 claims
- 1260US9711600B2Semiconductor device and method of manufacturing the same, power conversion device, three-phase motor system, automobile, and railway vehicleHITACHI LTD·Filed 2013·Granted Jul 18, 2017·2 cites·7 claims
- 1360US6881639B2Method of manufacturing semiconductor deviceHITACHI LTD·Filed 2003·Granted Apr 19, 2005·7 cites·8 claims
- 1460US6573540B2Semiconductor device and method for fabricating the sameHITACHI LTD·Filed 2001·Granted Jun 3, 2003·6 cites·2 claims
- 1559US7067857B2Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor moduleHITACHI LTD·Filed 2004·Granted Jun 27, 2006·9 cites·5 claims
- 1658US5949097ASemiconductor device, method for manufacturing same, communication system and electric circuit systemHITACHI LTD·Filed 1997·Granted Sep 7, 1999·17 cites·32 claims
- 1757US6943387B2Semiconductor device, manufacturing thereof and power amplifier moduleRENESAS TECH CORP·Filed 2003·Granted Sep 13, 2005·7 cites·4 claims
- 1855US9755014B2Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depthHITACHI POWER SEMICONDUCTOR DEVICE LTD·Filed 2016·Granted Sep 5, 2017·0 cites·6 claims
- 1954US6984871B2Semiconductor device with high structural reliability and low parasitic capacitanceRENESAS TECH CORP·Filed 2003·Granted Jan 10, 2006·6 cites·10 claims
- 2052US9164423B2Developer replenishment container accommodating apparatus, developer replenishment container, and image forming apparatusCANON FINETECH INC·Filed 2012·Granted Oct 20, 2015·0 cites·15 claims
- 2152US2022378872A1Composition for treatment and/or prevention of tumorUNIV FUKUSHIMA MEDICAL·Filed 2020·Application pending·0 cites
- 2248US7001819B2Semiconductor device and power amplifier using the sameRENESAS TECH CORP·Filed 2004·Granted Feb 21, 2006·2 cites·2 claims
- 2348US5296733AHetero junction bipolar transistor with improved electrode wiring contact regionHITACHI LTD·Filed 1990·Granted Mar 22, 1994·14 cites·27 claims
- 2448US2005186117A1Gas detecting method and gas sensorsFiled 2004·Application pending·0 cites
- 2547US6639257B2Hetero-junction bipolar transistor having a dummy electrodeHITACHI LTD·Filed 2002·Granted Oct 28, 2003·2 cites·4 claims
- 2645US9059328B2Nitride semiconductor element and method of manufacturing the sameHITACHI METALS LTD·Filed 2013·Granted Jun 16, 2015·0 cites·15 claims
- 2745US5668402ASemiconductor deviceHITACHI LTD·Filed 1993·Granted Sep 16, 1997·15 cites·19 claims
- 2843US11282919B2Semiconductor deviceAIST·Filed 2019·Granted Mar 22, 2022·0 cites·12 claims
- 2943US2007073448A1Semiconductor device having a hole or a step of normal mesa shape as viewed from any cross-section and manufacturing method of the sameRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3040US7276744B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Oct 2, 2007·0 cites·12 claims
- 3140US6674103B2HBT with nitrogen-containing current blocking base collector interface and method for current blockingUNIV CALIFORNIA·Filed 2001·Granted Jan 6, 2004·2 cites·9 claims
- 3239US2005040497A1Semiconductor device and manufacturing method of the sameFiled 2004·Application pending·0 cites
- 3338US2006163696A1Metal base transistor and oscillator using the sameHITACHI LTD·Filed 2005·Application pending·0 cites
- 3437US8598594B2Semiconductor device and its fabrication methodMOCHIZUKI KAZUHIRO·Filed 2012·Granted Dec 3, 2013·0 cites·16 claims
- 3537US8476731B2Nitride semiconductor diodeTERANO AKIHISA·Filed 2012·Granted Jul 2, 2013·0 cites·17 claims
- 3637US2006058697A1Portable health check apparatus and expiration analysis service method using the sameMOCHIZUKI KAZUHIRO·Filed 2005·Application pending·0 cites
- 3737US2007241427A1Mesa-type bipolar transistorMOCHIZUKI KAZUHIRO·Filed 2007·Application pending·0 cites
- 3834US10741648B2Semiconductor device and manufacturing method thereofAIST·Filed 2017·Granted Aug 11, 2020·0 cites·19 claims
- 3934US9518736B2Water-containing solid fuel drying apparatus and drying methodYOKOHAMA KATSUHIKO·Filed 2010·Granted Dec 13, 2016·0 cites·12 claims
- 4034US5017517AMethod of fabricating semiconductor device using an Sb protection layerHITACHI LTD·Filed 1990·Granted May 21, 1991·6 cites·23 claims
- 4134US2007295994A1Hetero junction bipolar transistorMOCHIZUKI KAZUHIRO·Filed 2007·Application pending·0 cites
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