Inventor · disambiguated record
Dean E. Probst
Also filed as: PROBST DEAN · PROBST DEAN E · PROBST DEAN EDWARD
65 granted patents·8 pending applications·1,554 citations·filing 1997–2023
99Inventor score
Files withFAIRCHILD SEMICONDUCTOR33SEMICONDUCTOR COMPONENTS IND LLC17MOXTEK INC6YEDINAK JOSEPH A4CHALLA ASHOK2
Top patents by PatentIndex Score
73 records- 0199US6429481B1Field effect transistor and method of its manufactureFAIRCHILD SEMICONDUCTOR·Filed 1997·Granted Aug 6, 2002·416 cites·22 claims
- 0298US7504303B2Trench-gate field effect transistors and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·94 cites·21 claims
- 0398US7344943B2Method for forming a trench MOSFET having self-aligned featuresFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Mar 18, 2008·58 cites·11 claims
- 0497US8143124B2Methods of making power semiconductor devices with thick bottom oxide layerCHALLA ASHOK·Filed 2008·Granted Mar 27, 2012·148 cites·6 claims
- 0597US7385248B2Shielded gate field effect transistor with improved inter-poly dielectricFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Jun 10, 2008·88 cites·21 claims
- 0696US8174067B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted May 8, 2012·29 cites·20 claims
- 0796US7923776B2Trench-gate field effect transistor with channel enhancement region and methods of forming the sameFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Apr 12, 2011·19 cites·13 claims
- 0896US6916745B2Structure and method for forming a trench MOSFET having self-aligned featuresFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Jul 12, 2005·90 cites·23 claims
- 0995US9726897B2Cube polarizer with minimal optical path length differenceMOXTEK INC·Filed 2015·Granted Aug 8, 2017·18 cites·19 claims
- 1095US7598144B2Method for forming inter-poly dielectric in shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Oct 6, 2009·32 cites·31 claims
- 1195US7595524B2Power device with trenches having wider upper portion than lower portionFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Sep 29, 2009·22 cites·31 claims
- 1295US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 1395US6710406B2Field effect transistor and method of its manufactureFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Mar 23, 2004·65 cites·32 claims
- 1494US8563377B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2012·Granted Oct 22, 2013·11 cites·19 claims
- 1594US8043913B2Method of forming trench-gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Oct 25, 2011·13 cites·18 claims
- 1693US6828195B2Method of manufacturing a trench transistor having a heavy body regionFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Dec 7, 2004·43 cites·23 claims
- 1792US8963212B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Feb 24, 2015·8 cites·23 claims
- 1892US8680611B2Field effect transistor and schottky diode structuresKOCON CHRISTOPHER BOGUSLAW·Filed 2012·Granted Mar 25, 2014·9 cites·25 claims
- 1992US7078296B2Self-aligned trench MOSFETs and methods for making the sameFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jul 18, 2006·69 cites·24 claims
- 2092US6700158B1Trench corner protection for trench MOSFETFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Mar 2, 2004·72 cites·9 claims
- 2191US9354374B2Polarizer with wire pair over ribMOXTEK INC·Filed 2014·Granted May 31, 2016·14 cites·20 claims
- 2291US9348076B2Polarizer with variable inter-wire distanceMOXTEK INC·Filed 2014·Granted May 24, 2016·14 cites·20 claims
- 2390US9632223B2Wire grid polarizer with side regionMOXTEK INC·Filed 2014·Granted Apr 25, 2017·9 cites·12 claims
- 2490US8936985B2Methods related to power semiconductor devices with thick bottom oxide layersCHALLA ASHOK·Filed 2012·Granted Jan 20, 2015·6 cites·12 claims
- 2590US8148749B2Trench-shielded semiconductor deviceGREBS THOMAS E·Filed 2009·Granted Apr 3, 2012·21 cites·34 claims
- 2689US12051967B2Integrated transistor and resistor-diode-capacitor snubberSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Jul 30, 2024·1 cites·20 claims
- 2788US8193581B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Jun 5, 2012·10 cites·16 claims
- 2888US7799636B2Power device with trenches having wider upper portion than lower portionFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Sep 21, 2010·8 cites·12 claims
- 2988US7511339B2Field effect transistor and method of its manufactureFAIRCHILD SEMICONDUCTOR·Filed 2003·Granted Mar 31, 2009·26 cites·51 claims
- 3086US8884365B2Trench-gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Nov 11, 2014·4 cites·20 claims
- 3186US8564024B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Oct 22, 2013·8 cites·23 claims
- 3285US10268046B2Cube polarizerMOXTEK INC·Filed 2016·Granted Apr 23, 2019·2 cites·20 claims
- 3385US6825510B2Termination structure incorporating insulator in a trenchFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Nov 30, 2004·35 cites·13 claims
- 3484US8034682B2Power device with trenches having wider upper portion than lower portionFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Oct 11, 2011·4 cites·18 claims
- 3584US7148111B2Method of manufacturing a trench transistor having a heavy body regionFAIRCHILD SEMICONDUCTOR·Filed 2004·Granted Dec 12, 2006·19 cites·36 claims
- 3683US8610205B2Inter-poly dielectric in a shielded gate MOSFET devicePROBST DEAN E·Filed 2011·Granted Dec 17, 2013·10 cites·22 claims
- 3781US10868113B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2017·Granted Dec 15, 2020·2 cites·18 claims
- 3880US9798058B2Wire grid polarizer with side regionMOXTEK INC·Filed 2017·Granted Oct 24, 2017·2 cites·20 claims
- 3980US8476133B2Method of manufacture and structure for a trench transistor having a heavy body regionMO BRIAN SZE-KI·Filed 2010·Granted Jul 2, 2013·4 cites·22 claims
- 4079US10600905B1Trench MOSFET contactsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Mar 24, 2020·2 cites·20 claims
- 4179US9293526B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Mar 22, 2016·3 cites·27 claims
- 4278US12278266B2Reverse recovery charge reduction in semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 4378US8441069B2Structure and method for forming trench-gate field effect transistor with source plugYILMAZ HAMZA·Filed 2011·Granted May 14, 2013·2 cites·20 claims
- 4472US9391193B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Jul 12, 2016·1 cites·18 claims
- 4569US11049956B2Method of forming a semiconductor deviceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Jun 29, 2021·1 cites·20 claims
- 4669US7952141B2Shield contacts in a shielded gate MOSFETFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted May 31, 2011·4 cites·16 claims
- 4768US11776997B2Reverse recovery charge reduction in semiconductor devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 4868US7781835B2Lateral drain MOSFET with improved clamping voltage controlFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Aug 24, 2010·3 cites·10 claims
- 4966US11742420B2Semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 5065US8716783B2Power device with self-aligned source regionsHERRICK ROBERT·Filed 2011·Granted May 6, 2014·1 cites·20 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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