Inventor · disambiguated record
Satoshi Hiyamizu
Also filed as: HIYAMIZU SATOSHI
5 granted patents·62 citations·filing 1981–1996
78Inventor score
Top patents by PatentIndex Score
5 records- 0166US4714948AHEMT with epitaxial narrow bandgap source/drain contacts isolated from wide bandgap layerFUJITSU LTD·Filed 1986·Granted Dec 22, 1987·25 cites·4 claims
- 0265US4833508AHigh electron mobility device with intrinsic AlAs/GaAs superlattice separator regionFUJITSU LTD·Filed 1987·Granted May 23, 1989·23 cites·5 claims
- 0345US4799088AHigh electron mobility single heterojunction semiconductor devices and methods for production thereofFUJITSU LTD·Filed 1981·Granted Jan 17, 1989·13 cites·10 claims
- 0429US5679179AMethod of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs hetero-structure obtained by the methodKUBOTA KK·Filed 1995·Granted Oct 21, 1997·1 cites·11 claims
- 0528US5951756AMethod of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs hetero-structure obtained by the methodKUBOTA KK·Filed 1996·Granted Sep 14, 1999·0 cites·5 claims
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