Inventor · disambiguated record
Jenn-Gwo Hwu
Also filed as: HWU JENN-GWO
40 granted patents·11 pending applications·105 citations·filing 1994–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD39NAT SCIENCE COUNCIL5UNIV NAT TAIWAN4IND TECH RES INST1MACRONIX INT CO LTD1
Top patents by PatentIndex Score
51 records- 0193US11411535B2Semiconductor device and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·2 cites·20 claims
- 0287US10958216B2Semiconductor device and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·3 cites·20 claims
- 0383US12100753B2Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 0483US2024387712A1Gated metal-insulator-semiconductor (mis) tunnel diode having negative transconductanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0582US12426317B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·1 cites·20 claims
- 0679US2025366065A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0779US2025359095A1Integrated circuit device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0877US12274078B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0977US2025234565A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1075US11722099B2Semiconductor device and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
- 1174US6887310B2High-k gate dielectrics prepared by liquid phase anodic oxidationUNIV NAT TAIWAN·Filed 2002·Granted May 3, 2005·8 cites·20 claims
- 1273US11757025B2Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 12, 2023·0 cites·20 claims
- 1373US11574908B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 1471US2025331243A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1570US11563009B2Semiconductor memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·0 cites·20 claims
- 1670US11532669B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 20, 2022·1 cites·20 claims
- 1769US11605674B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 1869US5683946AMethod for manufacturing fluorinated gate oxide layerNAT SCIENCE COUNSIL·Filed 1995·Granted Nov 4, 1997·29 cites·20 claims
- 1967US10868117B2Systems and methods for forming nanowires using anodic oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 2066US10978461B2Antifuse array and method of forming antifuse using anodic oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·0 cites·20 claims
- 2166US10868158B2Charge storage and sensing devices and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·0 cites·20 claims
- 2266US9748379B2Double exponential mechanism controlled transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·1 cites·20 claims
- 2365US11502189B2Charge storage and sensing devices and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 2464US11195835B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·0 cites·20 claims
- 2563US11024674B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·0 cites·20 claims
- 2663US2023122374A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2762US12402334B2Integrated circuit device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 2862US10879249B2Semiconductor memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 2962US10868157B2Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 3061US10504907B2Antifuse array and method of forming antifuse using anodic oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 3160US9953989B2Antifuse array and method of forming antifuse using anodic oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 24, 2018·0 cites·19 claims
- 3259US12464776B2Charge-coupled transistor with different-dielectric-thickness structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 4, 2025·0 cites·20 claims
- 3359US9528194B2Systems and methods for forming nanowires using anodic oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 27, 2016·0 cites·20 claims
- 3458US10510837B2Systems and methods for forming nanowires using anodic oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·0 cites·20 claims
- 3557US10381353B2Semiconductor memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 13, 2019·0 cites·10 claims
- 3657US6991989B2Process of forming high-k gate dielectric layer for metal oxide semiconductor transistorIND TECH RES INST·Filed 2004·Granted Jan 31, 2006·8 cites·13 claims
- 3755US11855099B2Metal-insulator-semiconductor tunnel diode memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3850US10651300B2Charge storage and sensing devices and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
- 3950US5926615ATemperature compensation method for semiconductor wafers in rapid thermal processor using separated heat conducting rings as susceptorsNAT SCIENCE COUNCIL·Filed 1997·Granted Jul 20, 1999·18 cites·4 claims
- 4049US10515998B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·20 claims
- 4149US9812395B2Methods of forming an interconnect structure using a self-ending anodic oxidationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 7, 2017·0 cites·25 claims
- 4249US5736454AMethod for making a silicon dioxide layer on a silicon substrate by pure water anodization followed by rapid thermal densificationNAT SCIENCE COUNCIL·Filed 1997·Granted Apr 7, 1998·17 cites·4 claims
- 4348US7778072B2Method for fabricating charge-trapping memoryMACRONIX INT CO LTD·Filed 2006·Granted Aug 17, 2010·0 cites·14 claims
- 4448US6352939B1Method for improving the electrical properties of a gate oxideNAT SCIENCE COUNCIL·Filed 2000·Granted Mar 5, 2002·3 cites·21 claims
- 4546US2024334672A1Method fop forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4642US2009014730A1Silicon carbide transistors and methods for fabricating the sameUNIV NAT TAIWAN·Filed 2008·Application pending·0 cites
- 4741US2025131967A1Memory device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4839US6091889ARapid thermal processor for heating a substrateNAT SCIENCE COUNCIL·Filed 1999·Granted Jul 18, 2000·7 cites·6 claims
- 4937US2005181619A1Method for forming metal oxide layer by nitric acid oxidationUNIV NAT TAIWAN·Filed 2004·Application pending·0 cites
- 5034US2003082842A1On-chip temperature sensor formed of MOS tunneling diodeUNIV NAT TAIWAN·Filed 2002·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
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