Inventor · disambiguated record
Glenn Charles Abeln
Also filed as: ABELN GLENN C · ABELN GLENN CHARLES
12 granted patents·2 pending applications·110 citations·filing 1999–2023
88Inventor score
Top patents by PatentIndex Score
14 records- 0196US11233663B1Physically unclonable function having source bias transistorsNXP USA INC·Filed 2020·Granted Jan 25, 2022·11 cites·20 claims
- 0283US7609541B2Memory cells with lower power consumption during a write operationFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 27, 2009·15 cites·18 claims
- 0381US7440313B2Two-port SRAM having improved write operationFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 21, 2008·13 cites·20 claims
- 0481US6207510B1Method for making an integrated circuit including high and low voltage transistorsLUCENT TECHNOLOGIES INC·Filed 1999·Granted Mar 27, 2001·62 cites·31 claims
- 0579US8913456B2SRAM with improved write operationBADRUDDUZA SAYEED A·Filed 2012·Granted Dec 16, 2014·8 cites·20 claims
- 0659US11277271B2SRAM based physically unclonable function and method for generating a PUF responseNXP USA INC·Filed 2019·Granted Mar 15, 2022·1 cites·17 claims
- 0757US11615836B2Devices and methods for adaptive retention voltage in volatile memoryNXP USA INC·Filed 2021·Granted Mar 28, 2023·0 cites·20 claims
- 0852US12322472B2Voltage generation circuit for SRAMNXP BV·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 0952US8062953B2Semiconductor devices with extended active regionsHALL MARK D·Filed 2008·Granted Nov 22, 2011·0 cites·17 claims
- 1049US12494248B2Memory power control unitNXP BV·Filed 2023·Granted Dec 9, 2025·0 cites·18 claims
- 1146US2012007155A1Semiconductor devices with extended active regionsHALL MARK D·Filed 2011·Application pending·0 cites
- 1245US7879663B2Trench formation in a semiconductor materialFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Feb 1, 2011·0 cites·19 claims
- 1340US11769567B2Devices and methods for preventing errors and detecting faults within a memory deviceNXP USA INC·Filed 2021·Granted Sep 26, 2023·0 cites·19 claims
- 1434US2006234467A1Method of forming trench isolation in a semiconductor deviceVAN GOMPEL TONI D·Filed 2005·Application pending·0 cites
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