Inventor · disambiguated record
Szu-Ping Tung
Also filed as: TUNG SZU-PING
37 granted patents·8 pending applications·93 citations·filing 2013–2025
96Inventor score
Top patents by PatentIndex Score
45 records- 0198US11682624B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·4 cites·20 claims
- 0296US11715640B2Patterning material including silicon-containing layer and method for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·3 cites·20 claims
- 0395US10685873B2Etch stop layer for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 16, 2020·10 cites·20 claims
- 0495US8940635B1Structure and method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·21 cites·20 claims
- 0594US10468297B1Metal-based etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·8 cites·20 claims
- 0693US11515474B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·2 cites·20 claims
- 0793US9496169B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·6 cites·20 claims
- 0892US10862026B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 8, 2020·2 cites·20 claims
- 0991US2025070027A1Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1090US11004734B2Metal-based etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·4 cites·20 claims
- 1189US10535816B2Via structure, MRAM device using the via structure and method for fabricating the MRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·4 cites·20 claims
- 1286US12159838B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1385US11804410B2Thin-film non-uniform stress evaluationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 31, 2023·2 cites·20 claims
- 1485US9917058B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·2 cites·20 claims
- 1585US9576892B2Semiconductor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 21, 2017·6 cites·20 claims
- 1684US9589800B2Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·3 cites·20 claims
- 1783US9640428B2Self-aligned repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 2, 2017·3 cites·20 claims
- 1882US11991930B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 1982US11651993B2Etch stop layer for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·1 cites·20 claims
- 2082US10103099B2Semiconductor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 16, 2018·3 cites·20 claims
- 2181US12205824B2Patterning material including silicon-containing layer and method for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 2281US9514928B2Selective repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 6, 2016·4 cites·19 claims
- 2379US2025323101A1Thin-film non-uniform stress evaluationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2477US12451393B2Etch stop layer for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 2574US11322396B2Etch stop layer for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 3, 2022·1 cites·20 claims
- 2674US2024355813A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2773US12374588B2Method for evaluating non-uniform stressTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 2873US11769693B2Metal-based etch-stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·0 cites·20 claims
- 2973US9129814B2Method for integrated circuit patterningTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 8, 2015·2 cites·20 claims
- 3072US10867794B2Patterning method for semiconductor devices and structures resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 3172US2025167000A1Patterning material including silicon-containing layer and method for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3272US2025316496A1Film deposition for patterning processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3370US12057445B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 3470US11004793B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 3565US10340223B2Method of forming an interconnect structure having an air gap and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·0 cites·20 claims
- 3662US12400875B2Film deposition for patterning processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 3762US8980745B1Interconnect structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 17, 2015·1 cites·20 claims
- 3857US9487864B2Metal capping process and processing platform thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 8, 2016·0 cites·20 claims
- 3954US9873944B2Metal capping process and processing platform thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·0 cites·20 claims
- 4054US9324606B2Self-aligned repairing process for barrier layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 26, 2016·0 cites·20 claims
- 4151US9218986B2Hard mask edge cover schemeTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·0 cites·20 claims
- 4251US2025022911A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4350US9543198B2Structure and method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·0 cites·20 claims
- 4448US2022102200A1Patterning material including carbon-containing layer and method for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 4544US2015206798A1Interconnect Structure And Method of FormingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →