Inventor · disambiguated record
Kyung-Woong Park
Also filed as: PARK KYUNG-WOONG
21 granted patents·8 pending applications·69 citations·filing 2002–2024
93Inventor score
Files withSK HYNIX INC7HYNIX SEMICONDUCTOR INC6DO KWAN-WOO4KOREA ADVANCED INST SCI & TECH3LEE KEE-JEUNG3
Top patents by PatentIndex Score
29 records- 0196US12249548B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2022·Granted Mar 11, 2025·2 cites·8 claims
- 0293US10964614B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2018·Granted Mar 30, 2021·7 cites·18 claims
- 0392US10360963B2Semiconductor device and semiconductor logic deviceKOREA ADVANCED INST SCI & TECH·Filed 2017·Granted Jul 23, 2019·12 cites·5 claims
- 0490US11973106B2Semiconductor device and method for manufacturing the sameSK HYNIX INC·Filed 2022·Granted Apr 30, 2024·1 cites·11 claims
- 0588US8134195B2Semiconductor device and method of fabricating the sameLEE KEE-JEUNG·Filed 2008·Granted Mar 13, 2012·14 cites·36 claims
- 0685US8372746B2Electrode of semiconductor device and method for fabricating capacitorHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Feb 12, 2013·8 cites·18 claims
- 0779US12199140B2Semiconductor device and method for manufacturing the sameSK HYNIX INC·Filed 2024·Granted Jan 14, 2025·0 cites·16 claims
- 0875US8288274B2Method of forming noble metal layer using ozone reaction gasKIL DEOK-SIN·Filed 2008·Granted Oct 16, 2012·5 cites·7 claims
- 0970US11532527B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2021·Granted Dec 20, 2022·0 cites·18 claims
- 1069US7910428B2Capacitor with pillar type storage node and method for fabricating the same including conductive capping layerHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 22, 2011·3 cites·12 claims
- 1169US6734100B2Method of forming ruthenium thin film using plasma enhanced processJUSUNG ENG CO LTD·Filed 2002·Granted May 11, 2004·12 cites·20 claims
- 1268US8441100B2Capacitor with pillar type storage node and method for fabricating the sameLEE KEE-JEUNG·Filed 2011·Granted May 14, 2013·2 cites·13 claims
- 1362US11205466B2Semiconductor device and semiconductor logic deviceKOREA ADVANCED INST SCI & TECH·Filed 2020·Granted Dec 21, 2021·0 cites·4 claims
- 1462US8148231B2Method of fabricating capacitorDO KWAN-WOO·Filed 2008·Granted Apr 3, 2012·1 cites·12 claims
- 1562US8035193B2Method of fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 11, 2011·2 cites·14 claims
- 1661US10861526B2Semiconductor device and semiconductor logic deviceKOREA ADVANCED INST SCI & TECH·Filed 2019·Granted Dec 8, 2020·0 cites·3 claims
- 1758US9058984B2Method for fabricating semiconductor deviceSK HYNIX INC·Filed 2014·Granted Jun 16, 2015·0 cites·18 claims
- 1857US2024206154A1Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2023·Application pending·0 cites
- 1952US8716842B2Method for fabricating semiconductor deviceLEE KEE-JEUNG·Filed 2011·Granted May 6, 2014·0 cites·13 claims
- 2050US7816202B2Method for fabricating capacitor in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Oct 19, 2010·0 cites·27 claims
- 2148US2013022744A1Method of forming noble metal layer using ozone reaction gasHYNIX SEMICONDUCTOR INC·Filed 2012·Application pending·0 cites
- 2247US2012147519A1Electrode in semiconductor device, capacitor and method of fabricating the sameDO KWAN-WOO·Filed 2012·Application pending·0 cites
- 2344US2009273882A1Capacitor and method for fabricating the samePARK KYUNG-WOONG·Filed 2009·Application pending·0 cites
- 2443US2009002917A1Capacitor in semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2542US8962437B2Method for fabricating capacitor with high aspect ratioKIM BEOM-YONG·Filed 2012·Granted Feb 24, 2015·0 cites·6 claims
- 2641US8298909B2Semiconductor device and method for fabricating the sameDO KWAN-WOO·Filed 2007·Granted Oct 30, 2012·0 cites·24 claims
- 2738US2013171797A1Method for forming multi-component layer, method for forming multi-component dielectric layer and method for fabricating semiconductor devicePARK KYUNG-WOONG·Filed 2012·Application pending·0 cites
- 2834US2012273921A1Semiconductor device and method for fabricating the sameDO KWAN-WOO·Filed 2011·Application pending·0 cites
- 2933US2003215994A1Method for forming ruthenium film of a semiconductor deviceFiled 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →