Inventor · disambiguated record
Peter Moens
Also filed as: MOENS PETER · MOENS PETER DOMINIQUE WILLEM
64 granted patents·15 pending applications·223 citations·filing 2001–2024
98Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC53SEMICONDUCTOR COMPONENTS IND16ROIG-GUITART JAUME4AMI SEMICONDUCTOR BELGIUM BVBA1CIT ALCATEL1
Top patents by PatentIndex Score
79 records- 0196US9741840B1Electronic device including a multiple channel HEMT and an insulated gate electrodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Aug 22, 2017·26 cites·20 claims
- 0296US9673311B1Electronic device including a multiple channel HEMTSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Jun 6, 2017·17 cites·13 claims
- 0395US11335798B2Enhancement mode MISHEMT with GaN channel regrowth under a gate areaSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted May 17, 2022·4 cites·16 claims
- 0491US10818787B1Electronic device including a high electron mobility transistor including a gate electrode and a dielectric filmSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Oct 27, 2020·5 cites·20 claims
- 0590US10797168B1Electronic device including a high electron mobility transistor that includes a barrier layer having different portionsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Oct 6, 2020·11 cites·20 claims
- 0689US10269947B1Electronic device including a transistor including III-V materials and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Apr 23, 2019·6 cites·20 claims
- 0789US9960265B1III-V semiconductor device and method thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted May 1, 2018·5 cites·22 claims
- 0889US9728629B1Electronic device including a polycrystalline compound semiconductor layer and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Aug 8, 2017·7 cites·19 claims
- 0988US10644127B2Process of forming an electronic device including a transistor structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted May 5, 2020·4 cites·20 claims
- 1088US9842923B2Ohmic contact structure for semiconductor device and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Dec 12, 2017·6 cites·16 claims
- 1186US7709889B2Semiconductor device with improved breakdown properties and manufacturing method thereofSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted May 4, 2010·16 cites·25 claims
- 1285US10964733B2Opto-electronic HEMTSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Mar 30, 2021·3 cites·20 claims
- 1384US10680094B2Electronic device including a high electron mobility transistor including a gate electrodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jun 9, 2020·4 cites·16 claims
- 1484US7915155B2Double trench for isolation of semiconductor devicesSEMICONDUCTOR COMPONENTS IND·Filed 2010·Granted Mar 29, 2011·7 cites·9 claims
- 1583US9842899B2Semiconductor wafer including a monocrystalline semiconductor layer spaced apart from a poly template layerSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Dec 12, 2017·4 cites·20 claims
- 1683US7723800B2Deep trench isolation for power semiconductorsSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted May 25, 2010·17 cites·16 claims
- 1782US9768295B2Semiconductor devices having super-junction trenches with conductive regions and method of making the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Sep 19, 2017·3 cites·20 claims
- 1882US9343528B2Process of forming an electronic device having a termination region including an insulating regionSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted May 17, 2016·6 cites·20 claims
- 1981US9245736B2Process of forming a semiconductor waferSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jan 26, 2016·6 cites·20 claims
- 2081US9219138B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Dec 22, 2015·5 cites·20 claims
- 2181US9070705B2HEMT semiconductor device and a process of forming the sameSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Jun 30, 2015·5 cites·20 claims
- 2281US2025126853A1Monolithic semiconductor device assembliesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 2380US7667270B2Double trench for isolation of semiconductor devicesSEMICONDUCTOR COMPONENTS IND·Filed 2006·Granted Feb 23, 2010·8 cites·7 claims
- 2479US12183785B2Monolithic semiconductor device assembliesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2579US9660062B2Bidirectional HEMT and an electronic package including the bidirectional HEMTSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted May 23, 2017·2 cites·19 claims
- 2678US9818854B2Electronic device including a bidirectional HEMTSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Nov 14, 2017·2 cites·20 claims
- 2778US9287371B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Mar 15, 2016·5 cites·16 claims
- 2876US10680092B2Electronic device including a transistor with a non-uniform 2DEGSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 2975US10062756B2Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2015·Granted Aug 28, 2018·2 cites·19 claims
- 3075US9543291B2Method of forming a high electron mobility semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Jan 10, 2017·2 cites·19 claims
- 3175US9112026B2Semiconductor devices and method of making the sameSEMICONDUCTOR COMPONENTS IND·Filed 2012·Granted Aug 18, 2015·3 cites·19 claims
- 3275US7608510B2Alignment of trench for MOSAMI SEMICONDUCTOR BELGIUM BVBA·Filed 2006·Granted Oct 27, 2009·5 cites·12 claims
- 3374US2025126827A1Non-linear hemt devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 3473US2024395922A1Hemt devices with reduced size and high alignment toleranceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 3572US7804670B2Hybrid ESD clampSEMICONDUCTOR COMPONENTS IND·Filed 2005·Granted Sep 28, 2010·7 cites·27 claims
- 3671US10797153B2Process of forming an electronic device including an access regionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 6, 2020·1 cites·20 claims
- 3770US9269789B2Method of forming a high electron mobility semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Feb 23, 2016·2 cites·20 claims
- 3869US11742381B2Monolithic semiconductor device assembliesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Aug 29, 2023·0 cites·16 claims
- 3969US8115273B2Deep trench isolation structures in integrated semiconductor devicesMOENS PETER·Filed 2008·Granted Feb 14, 2012·7 cites·22 claims
- 4068US10418439B2Method of forming a semiconductor device termination and structure thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Sep 17, 2019·1 cites·12 claims
- 4167US11444190B2Electronic device including a high electron mobility transistor including a gate electrode and a gate interconnect and a method of using the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 4267US9324784B2Electronic device having a termination region including an insulating regionSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Apr 26, 2016·2 cites·20 claims
- 4365US12183815B2Non-linear HEMT devicesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Dec 31, 2024·0 cites·25 claims
- 4465US11342443B2Process of forming an electronic device including a transistor structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted May 24, 2022·0 cites·18 claims
- 4565US7989886B2Alignment of trench for MOSSEMICONDUCTOR COMPONENTS IND·Filed 2009·Granted Aug 2, 2011·2 cites·5 claims
- 4664US12068406B2HEMT devices with reduced size and high alignment toleranceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 4763US9490372B2Method of forming a semiconductor device termination and structure thereforGUITART JAUME ROIG·Filed 2011·Granted Nov 8, 2016·2 cites·15 claims
- 4862US2025280577A1Electronic device including a power transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 4960US8298889B2Process of forming an electronic device including a trench and a conductive structure thereinROIG-GUITART JAUME·Filed 2008·Granted Oct 30, 2012·1 cites·15 claims
- 5058US10326011B2Electronic device including a HEMTSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Jun 18, 2019·0 cites·20 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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