Inventor · disambiguated record
Jordi Teva
Also filed as: TEVA JORDI
13 granted patents·8 citations·filing 2010–2018
83Inventor score
Top patents by PatentIndex Score
13 records- 0180US9293626B2Lateral avalanche photodiode device and method of productionAMS AG·Filed 2012·Granted Mar 22, 2016·4 cites·15 claims
- 0273US9054261B2Photodiode device and method for production thereofTEVA JORDI·Filed 2012·Granted Jun 9, 2015·2 cites·6 claims
- 0367US10374114B2Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diodeAMS AG·Filed 2014·Granted Aug 6, 2019·2 cites·8 claims
- 0463US10128385B2Lateral single-photon avalanche diode and method of producing a lateral single photon avalanche diodeAMS AG·Filed 2013·Granted Nov 13, 2018·0 cites·10 claims
- 0560US10522696B2Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diodeAMS AG·Filed 2018·Granted Dec 31, 2019·0 cites·6 claims
- 0658US9252298B2Photodiode device with reducible space charge regionAMS AG·Filed 2013·Granted Feb 2, 2016·0 cites·12 claims
- 0751US9018726B2Photodiode and production methodKRAFT JOCHEN·Filed 2012·Granted Apr 28, 2015·0 cites·6 claims
- 0844US9995894B2Semiconductor device with optical and electrical viasAMS AG·Filed 2014·Granted Jun 12, 2018·0 cites·8 claims
- 0941US9466529B2Masking method for semiconductor devices with high surface topographyAMS AG·Filed 2014·Granted Oct 11, 2016·0 cites·11 claims
- 1041US9245843B2Semiconductor device with internal substrate contact and method of productionAMS AG·Filed 2013·Granted Jan 26, 2016·0 cites·10 claims
- 1138US9443759B2Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor bodyMINIXHOFER RAINER·Filed 2012·Granted Sep 13, 2016·0 cites·11 claims
- 1237US8633107B2Method of producing a semiconductor device and semiconductor device having a through-wafer interconnectKRAFT JOCHEN·Filed 2010·Granted Jan 21, 2014·0 cites·6 claims
- 1335US8884442B2Method for producing a semiconductor component with a through-contact and semiconductor component with through-contactKRAFT JOCHEN·Filed 2011·Granted Nov 11, 2014·0 cites·4 claims
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